N-Channel JFET
High Frequency Amplifier
U308 – U310
FEATURES
••High Pow e r Gai n
••Low Noise
••Dyn am ic Range Gr eat er The 100 dB
••Easily Matched to 75Ω Input
ABSOLUTE M AXIM UM R A T INGS
(TA = 25oC unless o ther w ise specified)
Gate- Dr ain or Gate -So urce Volt age . . . . . . . . . . . . . . . . -25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Stor age Temp e ratu re. . . . . . . . . . . . . . . . . . . -6 5oC to +200 oC
Oper at ing Temper at ur e Ra nge . . . . . . . . . . . -55 oC to +150 oC
Lead Tempe ratu re (So ld er ing, 10se c). . . . . . . . . . . . . +300oC
Power Dissipat ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 0m W
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 4 mW /oC
NOTE: Stresses above those listed under "Abs olute Maxi m um
Ratings " may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above thos e indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affec t device reliability.
ORDERING INFORMATION
Part Package Temperature Range
U308-1 0 Herm etic T O- 52 -55 oC to +150oC
XU308-1 0 Sort ed Chips in Car rier s -55oC to +150oC
LLC
PIN CONFIGU R ATI ON
DS
(TO-52)
G, C
5021
ELECTRICA L CHARACTERI STIC S (TA = 2 5oC unless other wise sp ecif ied)
SYMBOL PARAMETER U308 U309 U310 UNITS TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
IGSS Gate Reverse Current -150 -150 -150 pA VGS = -15V
-150 -150 -150 nA VGS = 0 TA = 125oC
BVGSS Gate-Source Breakdown Voltage -25 -25 -25 VIG = -1µA, VDS = 0
VGS(off) Gate-Source Cutoff V oltage -1.0 -6.0 -1.0 -4.0 -2.5 -6.0 VDS = 10V, ID = 1nA
IDSS Saturation Drain Current (Note 1) 12 60 12 30 24 60 mA VDS = 10V, VGS = 0
VGS(f) Gate-Source Forward Voltag e 1.0 1.0 1.0 V IG = 10mA, VDS = 0
gfg Common-Gate Forward
Transconductance (Note 1) 10 17 10 17 10 17 mS VDS = 10V,
ID = 10mA f = 1kHz
gogs Common Gate Output Conductance 250 250 250 µS
Cgd Drain-Gate Capacitance 2.5 2.5 2.5 pF VGS = -10V,
VDS = 10V f = 1M Hz
(Not e 2)
Cgs Gate-Source Capacitance 5.0 5.0 5.0
enEquivalent Short Circuit
Input Noise Voltage 10 10 10 nV
√Hz VDS = 10V,
ID = 10mA f = 100Hz
(Not e 2)
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS075 REV A
U308 – U310
LLC
ELECTRICA L CHARACTERI STIC S (Continued) (TA = 25 oC unless otherwise specified)
SYMBOL PARAMETER U308 U309 U310 UNITS TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
gfg Common-Gate Forward
Transconductance 15 15 15
µSVDS = 10V,
ID = 10mA
(Note 2)
f = 100MHz
14 14 14 f = 450MHz
gogs Common-Gate Output
Conductance 0.18 0.18 0.18 f = 100MHz
0.32 0.32 0.32 f = 450MHz
Gpg Commo n-Gate Power Gain 14 16 14 16 14 16
dB
f = 100MHz
10 11 10 11 10 11 f = 450MHz
NF Noise Figure 1. 5 2.0 1. 5 2.0 1. 5 2.0 f = 100MHz
2.7 3.5 2.7 3.5 2.7 3.5 f = 450MHz
NOTES: 1. Pulse test duration = 2ms.
2. For design reference only, not 100% tested.
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS075 REV A
