Data Sheet 1 of 10 Rev. 01, 2009-04-16
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
Description
The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs
designed for cellular power amplifier applications in the 725 to 770
MHz band. Features include input matching and thermally-enhanced
packages with slotted or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA070601E
Package H-36265-2
Thermally-Enhanced High Power RF LDMOS FETs
60 W, 725 – 770 MHz
2-Carrier WCDMA Performance
VDD = 28 V, IDQ
= 600 mA, ƒ = 760 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-55
-50
-45
-40
-35
-30
-25
29 31 33 35 37 39 41 43 45 47
Output Power, avg. (dBm)
IM3 (dBc), ACPR (dBc)
5
10
15
20
25
30
35
40
45
50
55
Drain Efficiency (%)
ACPR
Efficiency
IM3
RF Characteristics
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 600 mA, POUT = 12 W AVG, ƒ = 760 MHz
Characteristic Symbol Min Typ Max Unit
Intermodulation Distortion IMD —–37 —dBc
Gain Gps —19 —dB
Drain Efficiency ηD—29 —%
PTFA070601F
Package H-37265-2
*See Infineon distributor for future availability.
Features
•Broadband internal matching
•Typical WCDMA performance, 760 MHz, 28 V
- Average output power = 12 W
- Gain = 19 dB
- Efficiency = 29%
•Typical CW performance, 760 MHz, 28 V
- Output power at P–1dB = 60 W
- Gain = 19 dB
- Efficiency = 72%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 28 V, 60 W
(CW) output power
•Pb-free and RoHS-compliant
Data Sheet 2 of 10 Rev. 01, 2009-04-16
PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 600 mA, POUT = 60 W PEP, ƒ = 760 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 18 19.5 —dB
Drain Efficiency ηD46.5 48 —%
Intermodulation Distortion IMD —–31 –29 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.15 —V
Operating Gate Voltage VDS = 28 V, IDQ = 600 mA VGS 2.0 2.3 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD219 W
Above 25°C derate by 1.25 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 60 W CW) RθJC 0.8 °C/W
Ordering Information
Type and Version Package Outline Package Description Shipping Marking
PTFA070601E V4 H-36265-2 Thermally-enhanced, Tray PTFA070601E
slotted flange, single-ended
PTFA070601F V4 H-37265-2 Thermally-enhanced, Tray PTFA070601F
earless flange, single-ended
*See Infineon distributor for future availability.
Data Sheet 3 of 10 Rev. 01, 2009-04-16
PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 600 mA, ƒ = 760 MHz
15
16
17
18
19
20
21
22
36 38 40 42 44 46 48 50
Output Power (dBm)
Gain (dB)
15
25
35
45
55
65
75
Drain Efficiency (%)
Gain
Efficiency
TCASE = -10°C
TCASE = 25°C
TCASE = 80°C
Broadband Performance
VDD = 28 V, IDQ = 600 mA, POUT = 45 dBm
15
20
25
30
35
40
45
50
710 720 730 740 750 760 770
Frequency (MHz)
Gain (dB), Efficiency (%)
-20
-18
-16
-14
-12
-10
-8
-6
-4
Input Return Loss (dB)
Gain
Efficiency
Return Loss
Typical Performance (data taken in a production test fixture)
Broadband Performance (at P–1dB)
VDD = 28 V, IDQ = 600 mA
15
20
25
30
35
40
45
50
55
60
65
710 720 730 740 750 760 770
Frequency (MHz)
Gain (dB), Efficiency (%)
46
47
48
49
50
51
Output Power (dBm)
Gain
Efficiency
Output Power
IM3 vs. Output Power at Selected Biases
VDD = 28 V, ƒ = 760 MHz, tone spacing = 1 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
29 31 33 35 37 39 41 43 45 47
Output Power, Avg. (dBm)
IDQ
= 600 mA
IDQ
= 700 mA
Intermodulation Distortion (dBc)
IDQ
= 450 mA
Data Sheet 4 of 10 Rev. 01, 2009-04-16
PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
Output Power (P–1dB) vs. Drain Voltage
IDQ = 600 mA, ƒ = 760 MHz
46.5
47
47.5
48
48.5
49
49.5
22 24 26 28 30 32 34
Drain Voltage (V)
Output Power (dBm)
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.8 A
2.4 A
6.0 A
12.0 A
18.0 A
24.0 A
32.0 A
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 600 mA,
ƒ = 760 MHz, tone spacing = 1 MHz
-75
-65
-55
-45
-35
-25
-15
28 30 32 34 36 38 40 42 44 46
Output Power, Avg. (dBm)
0
10
20
30
40
50
Drain Efficiency (%)
IM5
Efficiency
IM7
Intermodulation Distortion (dBc)
IM3
Data Sheet 5 of 10 Rev. 01, 2009-04-16
PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
700 5.32 –4.82 3.14 0.61
720 5.07 –4.40 3.01 1.02
740 4.84 –3.91 2.88 1.44
760 4.69 –3.40 2.79 1.90
800 4.55 –2.39 2.69 2.82
See next page for circuit information
0.1
0.2
0.1
0
.
2
0.1
.2
-
W
AV
E
LE
N
GT
H
S T
O
W
AR
D
G
E
NE
R
AT
O
R
-
-
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Z Load
Z Source
700 MHz
700 MHz
800 MHz
800 MHz
Data Sheet 6 of 10 Rev. 01, 2009-04-16
PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
Reference Circuit
Reference circuit schematic diagram for ƒ = 760 MHz
Circuit Assembly Information
DUT PTFA070601E or PTFA070601F LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 4.5 Rogers TMM4 2 oz. copper
Microstrip Electrical Characteristics at 760 MHz Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.056 λ, 50.0 Ω12.19 x 1.37 0.480 x 0.054
l20.091 λ, 50.0 Ω19.81 x 1.37 0.780 x 0.054
l30.016 λ, 50.0 Ω3.56 x 1.37 0.140 x 0.054
l40.011 λ, 50.0 Ω2.29 x 1.37 0.090 x 0.054
l50.050 λ, 7.5 Ω9.58 x 16.21 0.377 x 0.638
l60.128 λ, 66.5 Ω28.45 x 0.79 1.120 x 0.031
l7, l80.123 λ, 52.2 Ω26.67 x 1.27 1.050 x 0.050
l90.146 λ, 11.0 Ω28.58 x 10.54 1.125 x 0.415
l10 0.005 λ, 11.0 Ω0.97 x 10.54 0.038 x 0.415
l11 0.075 λ, 37.8 Ω15.82 x 2.16 0.623 x 0.085
l12 0.026 λ, 37.8 Ω5.56 x 2.16 0.219 x 0.085
l13 0.022 λ, 50.0 Ω4.70 x 1.37 0.185 x 0.054
R4
2K V
C5
0.1µF
R7
5.1K
R6
10 V
C1
0.001µF
QQ1
LM7805
R1
1.2K V
C7
0.01µF
C6
0.1µF
C8
75pF
l6
C24
100pF
l11
C17
75pF
l8
l9
C18
1µF
C19
10µF
50V
C22
7.0pF
l10
L2
C20
0.1µF
C23
1.7pF
l12
C21
10µF
50V
l13 J2
C14
10µF
50V
C12
75pF
l7
C13
1µF
C15
0.1µF
L1
C16
10µF
50V
VDD
DUT
R8
10 V
R2
1.3K V
Q1
BCP56
C2
0.001µF
R3
2K V
C9
75pF
l1
J1 l2
C11
5.6pF
l4
C10
4.7pF
l3l5
VDD
C3
0.001µF
C4
10µF
35V
R5
5.1 V
Data Sheet 7 of 10 Rev. 01, 2009-04-16
PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND
C5, C6, C15, C20 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C7 Capacitor, 0.01 µF ATC 200B 103
C8, C9, C12, C17 Ceramic capacitor, 75 pF ATC 100B 750
C10 Ceramic capacitor, 4.7 pF ATC 100B 4R7
C11 Ceramic capacitor, 5.6 pF ATC 100B 5R6
C13, C18 Capacitor, 1.0 µF ATC 920C105
C14, C16, C19, C21 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C22 Ceramic capacitor, 7.0 pF ATC 100B 7R0
C23 Ceramic capacitor, 1.7 pF ATC 100B 1R7
C24 Ceramic capacitor, 100 pF ATC 100B 101
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor 1.2k ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor 1.3k ohms Digi-Key P1.3KGCT-ND
R3 Chip resistor 2k ohms Digi-Key P2KECT-ND
R4 Potentiometer 2k ohms Digi-Key 3224W-202ETR-ND
R5, R7 Chip resistor 5.1k ohms Digi-Key P5.1KECT-ND
R6, R8 Chip resistor 10 ohms Digi-Key P10ECT-ND
Reference circuit schematic diagram for ƒ = 760 MHz
Reference Circuit (cont.)
RF_IN RF_OUT
C3C1
R1
C2
R2
R5R3
C5
C8C7C6
C9
R8
R6R7
VDD
VDD
VDD
C4
Q1
QQ1
R4
C16
C14
C19
C21
a070601 ef-v4_ cd_4-20 -09
C10
C11
C15
C12 C13
C17 C18
C20
C23
C22
C24
L2
L1
*Gerber files for this circuit available on request
Data Sheet 8 of 10 Rev. 01, 2009-04-16
PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
C
L
L
C
D
G
S
0.0381 [.0015] -A-
2X 7.11
[.280]
LID
10.16±.25
[.400±.010]
15.49±.51
[.610±.020]
FLANGE
9.78
[.385]
15.23
[.600]
4X R1.52
[R.060]
2X R1.52
[R.060]
45° X 2.03
[.080]
2.66±.51
[.105±.020]
20.31
[.800]
10.16±.25
[.400±.010]
3.61±.38
[.142±.015]
SPH 1.57
[.062]
6.
6. ALL FOUR
CORNERS
4X R0.63
[R.025] MAX
C66065-A2326-C001-01-0027 H-36265-2.dwg
3.05
[.120]
1.02
[.040]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate.
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
5. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]
6. Exposed metal plane on top and bottom of ceramic insulator.
7. All tolerances ± 0.127 [.005] unless specified otherwise.
Package Outline Specifications
Package H-36265-2
Data Sheet 9 of 10 Rev. 01, 2009-04-16
PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
C
L
L
C
D
G
0.0381 [.0015] -A-
2X 7.11
[.280]
LID
10.16±.25
[.400±.010]
15.49±.51
[.610±.020]
FLANGE
10.16
[.400]
45° X 2.03
[.080]
2.66±.51
[.105±.020]
10.16
[.400]
10.16±.25
[.400±.010]
3.61±.38
[.142±.015]
SPH 1.57
[.062]
6. ALL FOUR
CORNERS
4X R0.63
[R.025] MAX
C66065-A2327-C001-01-0027 H-37265-2.dwg
1.02
[.040] S
Package Outline Specifications (cont.)
Package H-37265-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate.
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
5. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]
6. Exposed metal plane on top and bottom of ceramic insulator.
7. All tolerances ± 0.127 [.005] unless specified otherwise.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet 10 of 10 Rev. 01, 2009-04-16
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-04-16
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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Please send your proposal (including a reference to this document) to:
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or +1 408 776 0600 International
PTFA0706010E/F
Confidential, Limited Internal Distribution
Revision History: 2009-04-16 Data Sheet
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