SIEMENS BDP 948 PNP Silicon AF Power Transistor For AF drivers and output stages * High collector current * High current gain * Low collector-emitter saturation voltage * Complementary type: BDP947, BDP949 (NPN) ' VPS05163 Type Marking | Ordering Code Pin Configuration Package BDP 948 BDP 948 |Q62702-D1336 1=B j2=C |3=E |4=C |SOT-223 BDP 950 BDP 950 |Q62702-D1338 1=B j2=C |3=E |4=C |SOT-223 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VoEo Vv BDP 948 45 BDP 950 60 Collector-base voltage Vopo BDP 948 45 BDP 950 60 Emitter-base voltage VEBO 5 DC collector current Ie 3 A Peak collector current Iom Base current ig 200 mA Peak base current gm 500 Total power dissipation, Ts = 99C Prot 3 WwW Junction temperature 7 150 C Storage temperature T stg - 65... + 150 Thermal Resistance Junction ambient =?) Rina $42 KAW Junction - soldering point Aihgs $17 1) Package mounted on peb 40mm x 40mm x 1.5mm / Gem? Cu Semiconductor Group 911 11.96 SIEMENS BDP 948 Electrical Characteristics at 7,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. |max. DC Characteristics Collector-emitter breakdown voltage Vipryceo Vv Io =10mMA, ip =OmA, BDP 948 45 - - Io = 10 mA, ig =O mA, BDP 950 60 - - Collector-base breakdown voltage VierycBo Ic = 100 pA, fg=0,BDP 948 45 - - Io = 100 pA, fg=0,BDP 950 60 - - Base-emitter breakdown voltage ViBR)EBO fe = 10 pA, Ig = 9 5 - - Collector cutoff current lego Vop =45V, fe =0, Ta = 25C - - 100 nA Vop = 45 V, le =0, Ta = 150C - - 20 pA Emitter cutoff current leBo nA Vep=4V,ic=0 - - 100 DC current gain hee - Ilo =10 MA, Voge =5V 25 - - Io = 500 mA, Vogp=1V 85 - 475 Ilo=1A, Veg =2V 50 - - Collector-emitter saturation voltage 1) VcEsat Vv Ic=2A, p=02A - - 0.5 Base-emitter saturation voltage 1) VeEsat Ig=2A, lp=0.2A - - 1.3 AC Characteristics Transition frequency fr MHz Ig = 50 mA, Vog = 10 V, f= 100 MHz - 100 - Collector-base capacitance Cob pF Vop = 10 V, f= 1 MHz - 40 - 1) Pulse test: t < 300s; D < 2% Semiconductor Group 912 11.96 SIEMENS BDP 948 Total power dissipation P,,., = f(T"; Ts) Permissible Pulse Load Ains = At) * Package mounted on epoxy 0 20 40 60 80 100 120 C 150 e Ty Ts Permissible Pulse Load Piotmax / Protoc = Af) DC current gain hg = f (ic) Voge = 2V Semiconductor Group 913 11.96 SIEMENS BDP 948 Collector cutoff current icgo = f (Ta) Vop = 45V 108 t 101 10 10 Q 20 40 60 80 100 120 C 150 n 7, Base-emitter saturation voltage Ig =f (Veesat) Mre = 10 104 10 101 10 0.0 Semiconductor Group Collector-emitter saturation voltage Ic =t (Voksat), Mre = 10 104 103 10! 10 0.0 0.2 0.3 Vv 0.5 > Vest 01 Collector current /c = f (Vee) Voge = 2V 914 104 10 10 101 0.0 08 1.3 06 10 V wm Voc 0.2 0.4 11.96