Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150DY-2HBK
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
QM150DY-2HBK
• ICCollector current ........................ 150A
• VCEX Collector-emitter voltage ......... 1000V
• hFE DC current gain............................. 750
• Insulated Type
• UL Recognized
Yellow Card No; E80276 (N)
File No; E80271
C2E1
B2X
8
C2E1
108
93±
0.25
9 30
7
B1X
E2
C1
B2E2 E1B1
48±
0.25
15.3 25 25 21.5 1.8
8
14
10.5 615 6
62
B2X
3
17 8 17 8 17
3
16
30
37
9.5
E2 C1
B1X
E2
B2
E1
B1
4–φ6.5
3–M6
Tab#110, t=0.5
LABEL
http://store.iiic.cc/
Feb.1999
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M6
Typical value
Ratings
1000
1000
1000
7
150
150
1000
8
1500
–40~+150
–40~+125
2500
1.96~2.94
20~30
1.96~2.94
20~30
470
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=1000V, VEB=2V
VCB=1000V, Emitter open
VEB=7V
IC=150A, IB=200mA
–IC=150A (diode forward voltage)
IC=150A, VCE=4V
VCC=600V, IC=150A, IB1=0.3A, –IB2=3A
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
100
4.0
4.0
1.8
—
2.5
15
3.0
0.125
0.6
0.075
MITSUBISHI TRANSISTOR MODULES
QM150DY-2HBK
HIGH POWER SWITCHING USE
INSULATED TYPE
http://store.iiic.cc/
Feb.1999
1
10
0
10
–1
10
–1
10
0
10
7
5
4
3
2
7
5
4
32.6 3.0 3.4 3.8 4.2 4.6
3
2
V
CE
=4.0V
T
j
=25°C
250
200
150
100
50
0 0 1 2 3 4 5
T
j
=25°C
I
B
=0.6A
I
B
=40mA
I
B
=200mA
I
B
=400mA
I
B
=20mA
2
10
4
10
7
5
4
3
2
3
10
7
5
4
3
2
2 3 4 5 7
2
10
2 3 4
1
10
45 7
V
CE
=4.0V
V
CE
=10V
T
j
=25°C
T
j
=125°C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
2 3 4 5 7
2
10
2 3 4
1
10
5 7
3
10
T
j
=25°C
T
j
=125°C
V
BE(sat)
V
CE(sat)
I
B
=200mA
75327532 44
0
1
2
3
4
5
–2
10 32 754
T
j
=25°C
T
j
=125°C
I
C
=200A
I
C
=150A
I
C
=100A
1
10
7
5
4
3
2
0
10
7
5
4
3
22 3 4 5 7
2
10
2 3 4
1
10
2
5 7
3
10
T
j
=25°C
T
j
=125°C
I
B1
=0.3A
V
CC
=600V
I
B2
=–3A
t
on
t
s
t
f
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT I C (A)
DC CURRENT GAIN h FE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT I B (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE V CE (sat) (V)
SATURATION VOLTAGE V CE (sat), V BE (sat) (V)SWITCHING TIME t on, t s, t f (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM150DY-2HBK
HIGH POWER SWITCHING USE
INSULATED TYPE
http://store.iiic.cc/
Feb.1999
3
10
2
10
1
10
0
10
0
10 1
10
0
10
–3
10 –2
10 –1
10
3
10
2
10
1
10
0
10
0
10 1
10 2
10 3
10
100
80
60
40
20
0 0 20 60 100 120 16040 80 140
10
30
50
70
90
753275327532
75
32
75
3
2
7
5
32
444
TC=25°C
200µs
1ms
DC
100µs
tw=50µs
7 0
10
1
10
7
5
4
3
2
0
10
7
5
4
3 4 5 2 3 4 5 7 1
10
3
3
2
2 3
Tj=25°C
Tj=125°C
VCC=600V
IB1=300mA
IC=150A
ts
tf
400
0 0 200 400 600 1000
80
800
160
240
320
Tj=125°C
IB2=–3A
753275327532
0.02
0.16
0
7532
444
4 2
0.04
0.06
0.08
0.10
0.12
0.14
3
0.4 0.8 1.2 1.6 2.0 2.4
75
32
75
3
2
7
5
32Tj=25°C
Tj=125°C
NON–REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME t s, t f (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
DERATING FACTOR (%) COLLECTOR REVERSE CURRENT –I C (A)
MITSUBISHI TRANSISTOR MODULES
QM150DY-2HBK
HIGH POWER SWITCHING USE
INSULATED TYPE
Z th (j–c) (°C/ W)
http://store.iiic.cc/
Feb.1999
0
10
–3
10 –2
10 –1
10
0
10 1
10
3
10
2
10
1
10
0
10 0
10 1
10 2
10 3
10
0
10
2
10
1
10
–1
10
2
10
1
10 75432
0
10 75432
0
1000
500
1500
753275327532
75
32
75
3
2
7
5
32
444
VCC=600V
IB1=0.3A
Irr
Qrr
trr
Tj=25°C
Tj=125°C
IB2=–3A
5
753275327532
0.2
0.4
0.6
0.8
1.0
0
327532
444
44
I rr (A), Q rr (µc)
SURGE COLLECTOR REVERSE CURRENT
–I CSM (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM150DY-2HBK
HIGH POWER SWITCHING USE
INSULATED TYPE
Z th (j–c) (°C/ W)
t rr (µs)
http://store.iiic.cc/
