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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MJE170/171/172 MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : MJE170 : MJE171 : MJE172 Value - 60 - 80 - 100 Units V V V VCEO Collector-Emitter Voltage : MJE170 : MJE171 : MJE172 - 40 - 60 - 80 V V V VEBO Emitter-Base Voltage -7 V IC Collector Current (DC) -3 A ICP Collector Current (Pulse) -6 A IB Base Current PC Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) 1.5 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C -1 A 12.5 W Electrical Characteristics TC=25C unless otherwise noted Symbol BVCEO ICBO Parameter Collector-Emitter Breaksown Voltage : MJE170 : MJE171 : MJE172 Collector Cut-off Current : MJE170 : MJE171 : MJE172 : MJE170 : MJE171 : MJE172 Test Condition IC = 10mA, IB = 0 Min. Max. -40 -60 -80 VCB = - 60V, IB = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 VCB = - 60V, IE = 0, @TC = 150C VCB = - 80V, IE = 0, @TC = 150C VCB = - 100V, IE = 0, @TC = 150C Units V V V -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 A A A mA mA mA -0.1 A IEBO Emitter Cut-off Current VBE = - 7V, IC = 0 hFE DC Current Gain VCE = - 1V, IC = - 100mA VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 1.5A VCE(sat) Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA IC = - 1.5A, IB = - 150mA IC = - 3A, IB = - 600mA -0.3 -0.9 -1.7 V V V VBE(sat) Base-Emitter Saturation Voltage IC = - 1.5A, IB = - 150mA IC = - 3A, IB = - 600mA -1.5 -2.0 V V VBE(on) Base-Emitter ON Voltage VCE = - 1V, IC = - 500mA fT Current Gain Bandwidth Product VCE = - 10V, IC = - 100mA Cob Output Capacitance VCB = - 10V, IE = 0, f = 0.1MHz (c)2001 Fairchild Semiconductor Corporation 50 30 12 250 -1.2 50 V MHz 50 pF Rev. A2, June 2001 MJE170/171/172 Typical Charactristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = -1V 100 10 -0.1 -1 -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 VBE(sat) IC/IB=10 -0.8 V BE@VCE= -1V -0.6 -0.4 IC/IB=5 IC/IB=10 -0.2 V CE(sat) -0.0 -0.01 IC[A], COLLECTOR CURRENT -0.1 -1 -10 -100 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 1000 tD,tR[ns], TURN ON TIME Cob[pF], CAPACITANCE f=0.1MHZ IE =0 100 10 1 -0.1 -1 -10 tR 100 tD 10 1 -0.01 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Output Capacitance -1 -10 Figure 4. Turn On Time -10 s 0 s 100 0 tF 50 tSTG 10 IC[A], COLLECTOR CURRENT 1000 tF,tSTG[ns], TURN OFF TIME -0.1 IC[A], COLLECTOR CURRENT -1 DC 50 m s -0.1 MJE170 MJE171 MJE172 V CEMAX. -0.01 10 -0.1 -1 IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time (c)2001 Fairchild Semiconductor Corporation -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A2, June 2001 MJE170/171/172 Typical Characteristics (Continued) 16 PC[W], POWER DISSIPATION 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE Figure 7. DC current Gain (c)2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJE170/171/172 Package Demensions 8.00 0.30 11.00 o3.20 0.10 0.20 3.25 0.20 14.20MAX 3.90 0.10 TO-126 (1.00) (0.50) 0.75 0.10 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 16.10 0.30 13.06 0.75 0.10 0.20 1.75 0.20 1.60 0.10 +0.10 0.50 -0.05 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. 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