THIS PAGE INTENTIONALLY LEFT BLANK
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 1
AMPLIFIERS - LINEAR & POWER - SMT
HMC907LP5E
GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
v00.0510
General Description
Features
Functional Diagram
The HMC907LP5E is a GaAs MMIC pHEMT Distributed
Power Amplier which operates between 0.2 and
22 GHz. This self-biased power amplier provides
12 dB of gain, +36 dBm output IP3 and +26 dBm of
output power at 1 dB gain compression while requir-
ing only 350 mA from a +10 V supply. Gain atness is
excellent at ±0.7 dB from 0.2 to 22 GHz making the
HMC907LP5E ideal for EW, ECM, Radar and test
equipment applications. The HMC907LP5E amplier
I/Os are internally matched to 50 Ohms facilitating
integration into Mutli-Chip-Modules (MCMs) and is
packaged in a leadless QFN 5x5 mm surface mount
package, and requires no external matching compo-
nents.
High P1dB Output Power: +26 dBm
High Gain: 12 dB
High Output IP3: +36 dBm
Single Supply: +10 V @ 350 mA
50 Ohm Matched Input/Output
32 Lead 5x5 mm SMT Package: 25 mm
Typical Applications
The HMC907LP5E is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Electrical Specications, TA = +25 °C, Vdd = +10 V, Idd = 350 mA
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 0.2 - 10 10 - 18 18 - 22 GHz
Gain 10 12 10 11.5 10 11.5 dB
Gain Flatness ±0.7 ±0.6 ±0.7 dB
Gain Variation Over Temperature 0.01 0.013 0.014 dB/ °C
Input Return Loss 15 9 8 dB
Output Return Loss 13 12 8 dB
Output Power for 1 dB Compression (P1dB) 23 26 21 25 19.5 21.5 dBm
Saturated Output Power (Psat) 28.5 27 24.5 dBm
Output Third Order Intercept (IP3) 36 34 31 dBm
Noise Figure 3.5 3.5 4 dB
Supply Current
(Idd) (Vdd= 10V) 350 400 350 400 350 400 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
9 - 2
Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Gain vs. Vdd
HMC907LP5E
v00.0510
GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
-30
-20
-10
0
10
20
0 5 10 15 20 25 30
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0 4 8 12 16 20 24
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
0 4 8 12 16 20 24
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
0 4 8 12 16 20 24
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0 4 8 12 16 20 24
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
0 4 8 12 16 20 24
+8V
+9V
+10V
+11V
GAIN (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 3
AMPLIFIERS - LINEAR & POWER - SMT
Psat vs. Vdd
P1dB vs. Temperature P1dB vs. Vdd
Psat vs. Temperature
HMC907LP5E
v00.0510
GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
14
16
18
20
22
24
26
28
30
0 4 8 12 16 20 24
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
18
20
22
24
26
28
30
32
34
0 4 8 12 16 20 24
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
0 4 8 12 16 20 24
+8V
+9V
+10V
+11V
P1dB (dBm)
FREQUENCY (GHz)
18
20
22
24
26
28
30
32
34
0 4 8 12 16 20 24
+8V
+9V
+10V
+11V
Psat (dBm)
FREQUENCY (GHz)
Low Frequency Gain & Return Loss Noise Figure
-30
-20
-10
0
10
20
0.001 0.01 0.1 1 10
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
0 4 8 12 16 20 24
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
9 - 4
Output IP3 vs.
Temperature @ Pout = 16 dBm / Tone Output IP3 vs. Vdd @ Pout = 16 dBm / Tone
Output IM3 @ Vdd = 10V Output IM3 @ Vdd = 11V
Output IM3 @ Vdd = 8V Output IM3 @ Vdd = 9V
HMC907LP5E
v00.0510
GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
0
10
20
30
40
50
60
70
10 12 14 16 18 20 22 24
2 GHz
10 GHz
18 GHz
22 GHz
IM3 (dBc)
Pout/TONE (dBm)
0
10
20
30
40
50
60
70
10 12 14 16 18 20 22 24
2 GHz
10 GHz
18 GHz
22 GHz
IM3 (dBc)
Pout/TONE (dBm)
22
24
26
28
30
32
34
36
38
40
0 4 8 12 16 20 24
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
0
10
20
30
40
50
60
70
10 12 14 16 18 20 22 24
2 GHz
10 GHz
18 GHz
22 GHz
IM3 (dBc)
Pout/TONE (dBm)
0
10
20
30
40
50
60
70
10 12 14 16 18 20 22 24
2 GHz
10 GHz
18 GHz
22 GHz
IM3 (dBc)
Pout/TONE (dBm)
22
24
26
28
30
32
34
36
38
40
0 4 8 12 16 20 24
+8V
+9V
+10V
+11V
IP3 (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 5
AMPLIFIERS - LINEAR & POWER - SMT
HMC907LP5E
v00.0510
GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Power Dissipation
0
1
2
3
4
5
6
0 4 8 12 16 20
2 GHz
10 GHz
20 GHz
Max Pdiss @ 85C
POWER DISSIPATION (W)
INPUT POWER (dBm)
Power Compression @ 10 GHz
Gain & Power Supply
vs. Supply Current @ 10 GHz
0
4
8
12
16
20
24
28
32
0 3 6 9 12 15 18 21
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
10
15
20
25
30
35
8 9 10 11
Gain (dB)
P1dB (dBm)
Psat (dBm)
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
Second Harmonics vs. Pout @ Vdd = 10VSecond Harmonics vs. Vdd @ Pout = 16 dBm
Second Harmonics vs.
Temperature @ Pout = 16 dBm, Vdd = 10V
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+25C
+85C
-40C
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+8V
+9V
+10V
+11V
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+8 dBm
+10 dBm
+12 dBm
+14 dBm
+16 dBm
+18 dBm
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
9 - 6
HMC907LP5E
v00.0510
GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +11 Vdc
RF Input Power (RFIN)(Vdd = +11V) +20 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 63 mW/°C above 85 °C) 4.1 W
Thermal Resistance
(channel to ground paddle) 15.9 °C/W
Storage Temperature -65 to 150°C
Operating Temperature -55 to 85 °C
ESD Sensitivity (HBM) Class 1A
Vdd (V) Idd (mA)
+8 335
+9 343
+10 350
+11 357
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER
50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [1]
HMC907LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H907
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reow temperature of 260 °C
Package Information
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 7
AMPLIFIERS - LINEAR & POWER - SMT
HMC907LP5E
v00.0510
GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Application Circuit
Pin Number Function Description Interface Schematic
1, 4, 6, 8, 9,
16, 17, 20, 22,
24, 25, 32
GND Package bottom has exposed metal paddle
that must be connected to RF/DC ground.
2, 3, 7, 10 - 15,
18, 19, 23,
26 - 31
N/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
5 RFIN This pin is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
21 RFOUT & Vdd RF output for amplier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
Pin Descriptions
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
9 - 8
HMC907LP5E
v00.0510
GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Evaluation PCB
List of Materials for Evaluation PCB 130812 [1]
Item Description
J1, J2 SMA Connector
U1 HMC907LP5E Power Amplier
PCB [2] 109765 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon FR4
The circuit board used in the application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
