PE4239-02 - Peregrine Semiconductor Corp.

Page 1 of 9

RFC

RF1 RF2

CMOS

Control

Driver

CTRL CTRL or VDD

The PE4239 UltraCMOS™ RF Switch is desig ned to cover a

broad range of applications from DC through 3.0 GHz. This

reflective switch integrates on-board CMOS control logic with a

low voltage CMOS-compatible control interface, and can be

controlled using either single-pin or complementary control

inputs. Using a nominal +3-volt power supply voltage, a typical

input 1 dB compression point of +27 dBm can be achieved.

The PE4239 UltraCMOS™ RF Switch is manufactured on

Peregrine’s UltraCMOS™ process, a patented variation of

silicon -on-insulator (SOI ) technology on a sapphire substrate,

off eri ng th e per formance of GaAs wi th th e economy and

integration of co nventional CMOS.

Pro duct Specificat ion

SPDT UltraCMOS™ RF Switch

Product Description

Figure 1. Functional Diagram

Fig ure 2. Package Typ e SC- 7 0

PE4239

Features

• Single-pin or complementary CMOS

logic control inputs

• +3. 0- vol t power suppl y n ee de d f or

single-pin control mode

• Low i nser ti o n l oss : 0.7 dB at 1. 0 GHz,

0.9 dB at 2.0 GH z

• Iso lation of 32 dB at 1.0 GH z, 23 dB at

2.0 GHz

• Typical input 1 dB compression point of

+27 dBm

• Ultra -s mall SC-70 package

Parameter Conditions Minimum Typical Maximum Units

Operation Frequency1 DC 3000 MHz

Inser t io n Los s 1000 MH z

2000 MH z 0.7

0.9 0.85

1.05 dB

dB

Isolation 1000 MH z

2000 MH z 30

21 32

23 dB

dB

Return Loss 1000 MH z

2000 MH z 18

16 20

18 dB

dB

‘ON’ Switching Time 50% CTRL to 0.1 dB of final value, 1 GHz 300 ns

‘OFF’ Switching Time 50% CTRL to 25 dB isolation, 1 GHz 200 ns

Video Feedth rough2 15 mVpp

Inp ut 1 dB C o mpress io n 2000 MH z 26 27 dB m

Inp ut IP 3 2000 MH z , 14 dBm inp ut power 43 45 dB m

Notes: 1. Device linearity will begin to degrade below 10 MHz.

2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to High or High to Low in a 50  test

set -u p, meas ured wit h 1ns r is eti m e puls es and 500 MH z ba ndwidt h.

Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 50 )

6-lead SC-70

Product Specification

PE4239

Page 2 of 9

Table 2 . Pin Descriptions

Note 1: All RF pins must be DC blocked with an external series

capacitor or held at 0 VDC.

Figure 3. Pin Configuration (Top View) Table 3 . Absolute Maximum Rati ngs

Electrostatic Discharge (ESD) Precautions

When hand ling this UltraCMOS ™ devi ce, obs erve

the same precautions that you would use with

other ESD-se nsitiv e devices . Although thi s de vice

contains circuitry to protect it from damage due to

ESD, precautions should be taken to avoid

exceeding the specified rating.

Latc h-Up Avoidance

Unlike conventional CMO S device s, UltraCMOS™

devices are immune to latch-up.

Table 4. DC Electrical Specifications

No. Pin

Name Description

1 RF1 RF1 port (Note 1)

2 GND

Ground connection. Traces should be

physically short and connected to

gro un d pl ane for bes t per f or m anc e.

3 RF2 RF2 port (Note 1)

4 CTRL Switch control input, CMOS logic level.

5 RFC Common RF port for switch (Note 1)

6 CTRL or

VDD

This pin su pp or ts tw o int er f ac e op tions :

Single-pin control mode. A nominal 3-

volt supply connection is required.

Complementary-pin control mode. A

complementary CM O S control signal

to CTRL is supplied to this pin. By-

passing o n this pin is not required in

this mo de .

Symbol Parameter/Conditions Min Max Units

VDD Power supply voltage -0.3 4.0 V

VI Voltage on any input -0.3 VDD+

0.3 V

TST Storage temperature

range -65 150 °C

TOP Operating temperature

range -40 85 °C

PIN Input po wer ( 5 0) 30 dBm

VESD ESD voltage (H uman

Body M od el) 1500 V

Parameter Min Typ Max Units

VDD Power Supply

Voltage 2.7 3.0 3.3 V

IDD Power Su pply Current

(VDD = 3V, VCTRL = 3V ) 250 500 nA

Control Voltage High 0.7x VDD V

Control Voltage Low 0.3x VDD V

1

2

3 4

5

6CTRL or V

DD

RFC

CTRL

RF1

GND

RF2

.

239

pin 1

Product Specification

PE4239

Page 3 of 9

Control Voltages Signal Path

Pin 6 (CTRL or VDD) = VDD

Pin 4 (CTRL) = High RFC to RF1

Pin 6 (CTRL or VDD) = VDD

Pin 4 (CTRL) = Low RFC to RF2

Table 5. Single-pin Control Logic Truth Table

Table 6. Complementary-pin Control Logic

Truth Table

Control Voltages Signal Path

Pin 6 (CTRL or VDD) = Low

Pin 4 (CTRL) = High RFC to RF1

Pin 6 (CTRL or VDD) = Hi gh

Pin 4 (CTRL) = Low RFC to RF2

Control Logic Input

The PE4239 is a versatile RF CMOS switch that

supports two operating control modes; single-pin

control mode and complementary-pin control

mode.

Single-pin c o ntr ol m od e enables the switch to

operate with a single control pin (pin 4) supporting

a +3-volt CMOS logic input, and requires a

dedicated +3-volt power supply connection on pin

6 (VDD). This mode of operation reduces the

number of control lines required and simpli fies the

switch control interface typically derived from a

CMOS µProcessor I/O port.

Complementary-pin control mode allows the

switch to operate using complementary control

pins CTRL and CTRL (pins 4 & 6), that can be

directly driven by +3-volt CMOS logic or a suitable

µProcessor I/O port. This enables the PE4239 to

be used as a po tential alternate source for SPDT

RF switch products used in positive control

voltage mode and operating within the PE4239

operating limits.

Product Specification

PE4239

Page 4 of 9

Evaluation Kit

The SPDT Switch Evaluation Kit board was

designed to eas e c ustomer ev al u ation of the

PE42 39 SP DT swit ch. The RF common port is

connected through a 50 tran s mi s si on line to th e

top left SMA connector, J1 . Port 1 and Port 2 are

conne cted thr ough 50 transmission lines to the

top two SMA connectors on the right side of the

board, J3 and J2, respectively. A through

transmission line connects SMA connectors J4

and J5. This transmission line can be used to

estimate the loss of the PCB over the

envir o nm e ntal c o ndi tions bei ng ev al ua ted.

The board is constructed of a two metal layer FR4

material with a total thickness of 0.031”. The

bottom layer provides ground for the RF

transmission lines. The transmission lines were

designed using a coplanar waveguide with ground

plane model using a trace width of 0.0476”, trace

gaps of 0.030”, dielectric thickness of 0.028”,

metal thickness of 0.0021” and r of 4.4 .

J6 prov ides a means fo r controlling DC and digital

inputs to the device. Starting from the lower left

pin, the second pin to the right (J6-3) is connected

to the device V1 or CTRL input. The fourth pin to

the right (J6-7) is connected to the device V2 or

CTRL/VDD input.

Figure 4. Evaluation Board Layout

Figure 5. Evaluation Board Schematic

Peregr ine S pec ificat ion 102/0104

Peregr ine S pec ificat ion 101/0083

Product Specification

PE4239

Page 5 of 9

20

30

40

50

60

20

30

40

50

60

0 500 1000 1500 2000 2500 3000

IIP3 (dBm)

1dB Compression Point (dBm)

Frequency (MHz)

Typica l Pe rformance Data @ -40 °C to 85 °C (Unle ss otherwise noted)

Figure 7. Input 1 dB Compress i on Point & IIP3

(Typical performance @ 25 °C)

Figure 9. Isolation – RFC to RF1 Figure 8. Insertion Loss – RFC to RF2

Figure 6. Insertion Loss – RFC to RF1

-1.5

-1.2

-0.9

-0.6

-0.3

0

0 500 1000 1500 2000 2500 3000

Insertion Loss (dB)

Frequency (MHz)

Insertion Loss (dB)

-40°C

25°C85°C

-100

-80

-60

-40

-20

0

0 500 1000 1500 2000 2500 3000

Isolation (dB)

Frequency (MHz)

-1.5

-1.2

-0.9

-0.6

-0.3

0

0 500 1000 1500 2000 2500 3000

Insertion Loss (dB)

Frequency (MHz)

Insertion Loss (dB)

-40°C

25°C85°C

Product Specification

PE4239

Page 6 of 9

-100

-80

-60

-40

-20

0

0 500 1000 1500 2000 2500 3000

Isolation (dB)

Frequency (MHz)

-100

-80

-60

-40

-20

0

0 500 1000 1500 2000 2500 3000

Isolation (dB)

Frequency (MHz)

Figure 11. Isolation – RF1 to RF2, RF2 to RF1

Figure 13. Return Loss – RF1, RF2 Figure 12. Re tur n Loss – RFC to RF1, RF2

Figure 10. Isolation – RFC to RF2

Typica l Pe rformance Data @ -40 °C to 85 °C (Unle ss otherwise noted)

-40

-30

-20

-10

0

0 500 1000 1500 2000 2500 3000

Return Loss (dB)

Frequency (MHz)

RF2

RF1

-40

-30

-20

-10

0

0 500 1000 1500 2000 2500 3000

Return Loss (dB)

Frequency (MHz)

RF2

RF1

Product Specification

PE4239

Page 7 of 9

Figure 14. Package Drawing

6-lead SC-70

1.80

2.20

0.65

BSC

1.80

2.40

1.15

1.35

0.15

0.30

0.80

1.10

0.80

1.00

0.10

0.30

0.10

0.40 0.10

0.18

0.00

0.10

Product Specification

PE4239

Page 8 of 9

Table 7. Ordering Information

Ord er Code Part Marking Descrip tion Package Ship ping Method

4239-01 239 PE4239-06SC70-7680A 6-lead SC-70 7680 units / Canister

4239-02 239 PE4239-06SC70-3000C 6-lead SC-70 3000 units / T&R

4239-00 PE4239-EK PE4239-06SC70-EK Evaluation Kit 1 / Box

4239-51 239 PE4239G-06SC70-7680A Green 6-lead SC-70 7680 units / Canister

4239-52 239 PE4239G-06SC70-3000C Green 6-lead SC-70 3000 units / T&R

Figure 15. Tape and Reel Specification s

Pin 1

Tape Feed Dire c t ion

Product Specification

PE4239

Page 9 of 9

Sales Offices

The Americas

Peregrine Semiconductor Corporation

9450 Carr oll Park Drive

San Diego, CA 92121

Tel: 858-731-9400

Fax: 858-731-9499

North Asia Pacific

Peregrine Semiconductor K.K.

Teiko k u Hote l Tower 10B-6

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Tokyo 100-0011 Japan

Tel: +81-3-3502-5211

Fax: +81-3-3502-5213

Peregrine Semiconductor, Korea

#B-2402, Kolon Tripolis, #210

Geumgok-dong, Bundang- gu, Seongnam-si

Gyeonggi-do, 463-480 S. Korea

Tel: +82-31-728-4300

Fax: +82-31-728-4305

Europe

Peregrine Semiconductor Europe

Bâtiment Maine

13-15 rue des Q uatre Vent s

F-92380 Garches , France

Tel: +33-1-4741-9173

Fax : +33-1 -4741 -917 3

For a list of representat ives in your area, please r efer to our W eb site at: www.p semi.com

Data Sheet Identification

Advance Information

The product is in a formative or design stage. The data

sheet contains design target specif ications for product

development. Spec ifications and features may change in

any manner without notice.

Preliminary Specification

The data sheet contains pr eliminary data. Addit ional data

may be added at a later date. Peregrine reserves the right

to change specifications at any tim e without notice in order

to supply t he best possible product.

Product Specification

The data sheet contains final data . In the event Peregrine

dec ide s to cha nge the spe c ific a tions, Pereg rine will not ify

cust omers of the intended changes by issu ing a DCN

(Document Change Notice).

The information in this data sheet is believed t o be reliable.

Howeve r, Peregrine assum es no liability f or th e use of this

information. Use shall be entir ely at the user’s own risk.

No patent rights or licenses to any circuits described in this

data sheet are implied or granted t o any third party.

Peregrine’s pr oducts are not designed or intended for use in

devices or systems intended for surgical implant, or in other

applications intended to support or sustain life, or in any

application in which the failure of the Per egrine product could

create a situation in which personal injury or death m ight occur.

Peregr ine assumes no liability for damages, including

consequential or incident al dam ages, arising out of the use of

its products in such applications .

The Peregr ine nam e, logo, and UTSi are register ed trademarks

and UltraCMOS and HaRP are trademarks of Peregrine

Semiconductor Corp.

South As ia Pa cific

Peregrine Semiconductor, China

Shanghai, 200040, P.R. China

Tel: +86-21-5836-8276

Fax: +86-21-5836-7652

Spa ce and Defense Products

Americas :

Tel: 858-731-9453

Europe, Asia Pacific:

180 Rue Jean de Guiramand

13852 Aix-En-Provence Cedex 3, France

Tel: +33-4-4239-3361

Fax: +33-4-4239-7227