AWTO0908S6 ANADIGICS TX Power MMIC 900 MHz Band GSM dM GaAs Power Amplifier IC Advanced Product Information - Rev 0 FEATURES * High Output Power * High Efficiency * Single Supply Low Harmonics * Built in Pulse Shaping * Small Size * Surface Mount Package S6 * 50Q Input Impedance ... $80P 28. . * Low Cost 28 Pin Plastic Package w/ Heat Slug Description The AWT0908 is a 3 stage monolithic Power Amplifier IC suited for GSM cellular telephone Applications. Maximum Ratings Static sensitive efectronic devices. Do not operate or store near strong electrostatic, fields. Take proper ESD precautions. PIN RATING NOTES Pin 2 - RFy, + 12 dBm max., = Pin9-Vaer [+ 8V max, ovmmin. | Meee Sept righ and notpused. he ampifer may craw very | | v Pin 4 - VdB +7.5V max., OV min. 3 c Pin5-V WA Do not apply voltage to this pin. If V scm is not between - 4V and - = SSIN 4.5V (with V..,, = 4.8V), the amplifier may not work properly. Pin Rating Notes Pin 10 Vecour N/A Do not apply voltage to these pin Pin 11, Pin 12 N/A Do not apply voltage to these pins. Pin 13 - Veen +7.5V max., OV min. VGEN must be turned on before any of the drain supplies. Pin 16 - D2 +7.5V max., OV min. Pin19 - D3B +7.5V max., OV min. Pin 24- D3A +7.5V max., OV min. Pin 27 -D1 +7.5V max., OV min. ESINNADIGICS 3-37 AWTO0908S6 Electrical Characteristics (Pin < +7 dBm, V,. = + 4.8V 6, Veen = + 4.8 Vog: Pulsed @ 577 mS/12.5% Duty Cycle, Te= 25C, Z.= 50Q)* PARAMETER SYM | MIN | TYP | MAX UNIT Frequency fo 880 - 915 MHz Power Output @ V,., < 3.7V Pout - 35 - dBm Power Added Efficiency PAE - 50 - % . 2fo - 38 Harmonics (@ 35 dBm) 3rd - 28 - dBc Stability: - 80 dBc, all spurious VSWR load, all phase angles, outputs relative to desired - - 6:1 - (POUT <= 35dBmi signal Vig = +4.8.0V, Zs = 50 * input Return Loss Raw - 12 - dB isolation - . -40| - dBm DC/DC Converter Current IoeN - 5.5 - mA Pulse Control leer - - 2 mA Operating Range Tc - 20 - +70 C * As meadsured in ANADIGICS test fixture. g 3 DATA a 3 AWTO0908 Pout and Efficiency as functions of > 40.00 56% 30.00 +: 49% 20.00 - . + 42% 10.00 | 35% 0.00 {| 28% -10.00 , 21% Vdd=4.8V -20.00 Pin=+5.0dBm 14% -30.00 . VREF pulsed at 12.5% duty cycle 7% \ Pulse width - 577uS -40.00 0% 0 05 1 15 2 25 3 35 4 #45 5 Power Control Voltage - VREF [V] 3-38 CYINNADIGICS Recommended Operating Procedure on the Evaluation Board Power Up DOM> m am Begin by setting all power supplies to zero volts. Make sure that the input RF power is tumed off. Tum on V,,.,, (Pin 13) to + 4.8V Check the voltage @ V,.. ,, (pin 5) to see if it is between -4.5 V and - 4.0V if voltage is not ,check the pin alignment. Tum on V,,,(Pin 27), V.,(Pin 16), V.,(Pins 19 and 24) and V,,, (Pin 4) which are tied together on the fixture, and set to + 4.8V. Little drain current should be flowing at this time (|, < 5 mA). Tum RF on and adjust input power to 5 dBm. Tum V,,. on using the pulsed scheme of GSM. Adjust Pulse V,,... to desired output power (< = 35 dBm). No lower than 0 V and no higher than +3.7 V. Use an oscilloscope to measure V,,.. on the V... package pin (3) rather than using the display of the pulse generator. The reason for that is that the pulse generator may have a SOW output impedance while the impedance of V,,.. pin is high. This causes the voltage on V,... pin to be almost twice as high as the readout on the pulse generator. Power Down To power down the device follow the above procedure in reverse order . Test Circuit s 2 o & a Vss_ouT SPNPOld SSOjO1M Veen ESINNADIGICS 3-39 AWT0S08S6 Pin Description PIN SIGNAL DESCRIPTION 4 GND RF and DC Ground 2 RF, RF power input, DC blocked 3 Vv Output Power control, Should be set to level that corresponds to the desired REF output power Pulse control voltage (V__,, 0 to 4 V) 4 VDB Bias circuit Supply (+ 4.8 V, 5 ma ) 5 Vss mv Negative Supply (-4.5V) generated by the dc/dc converter 6,7,8,9 GND RF and DC Ground (The "Batwing") 10 Ves our The output of the de/de converter providing the negative voltage 11,12 Pump capacitor (C5) which is part of the dc/dc converter circuit. 13 Voen DC/DC converter positive supply 44 GND AC and DC ground for the dc/dc converter .if possible should be grounded through a separate via hole . 15 GND RF and DC ground. 16 V2 The open drain of the second amplifier stage 17 GND RF and DC Ground 18 NIC Not Connected 19 Voss 3rd stage drain supply (4.8V) and RF out 20,21,22,23 GND RF and DC ground (the "BATWING") 24 Vosa 3rd stage drain supply (4.8V) and RF out 25 NIC Not Connected 26 GND RF and DC ground 3 27 Vor 1st stage drain supply (4.8V) e 28 GND RF and DC Ground g Case Outline = 0.390 + 0.004 -AARARE Anas | ., C) 7 SLUG | St ssa a SoEEEEueeeE Cat + 4 ty 0.059 0.025 BSC -4 J+ 0.085 0002 + 0.002 4 r 4 a _| 0.010 TYP f+ 0.015 X 15 3-40 ESINNADIGICS