1
VGS=-30V
Tch 150°C
L=1.74mH
VCC=60V *1
VDS 600V
*2
Ta=25°C
Tc=25°C
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 600
VDSX 600
Continuous drain current ID±16
Pulsed drain current ID(puls] ±64
Gate-source voltage VGS ±30
Non-Repetitive IAS 16
Maximum avalanche current
Non-Repetitive EAS 242.7
Maximum avalanche energy
Maximum Drain-Source dV/dt dVDS/dt 20
Peak diode recovery dV/dt dV/dt 5
Max. power dissipation PD2.50
235
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3689-01
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
ID=8A VGS=10V
ID=8A VDS=25V
VCC=300V ID=8A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 0.532
50.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=16A
VGS=10V
L=1.74mH Tch=25°C
IF=16A VGS=0V Tch=25°C
IF=16A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
kV/s
kV/µs
W
°C
°C
600
3.0 5.0
25
250
10 100
0.42 0.57
6.5 13
1590 2390
200 300
812
29 43.5
16 24
58 87
812
34 51
12 18
10 15
16 1.00 1.50
0.68
7.8
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series
200401
<
=
<
=
*1 See to Avalanche Energy Graph
*2 IF -ID, -di/dt=50A/µs, VCC BVDSS, Tch 150°C
<
=
<
=<
=
11.6±0.2
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2
Characteristics
2SK3689-01 FUJI POWER MOSFET
0 4 8 12162024
0
10
20
30
40
50
7V
20V
10V
8V
6.5V
VGS=6.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer C h aracteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical T ransconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
0 102030
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RDS(on) [ Ω ]
ID [A ]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
10V
20V
8V
7V
6.5V
VGS=6V
-50 -25 0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
RDS(on) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8A,VGS=10V
0 255075100125150
0
100
200
300
400
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [ °C]
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3
2SK3689-01 FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS(th) [V]
Tch [°C]
0 102030405060
0
2
4
6
8
10
12
14
Qg [nC]
Typical G ate Charge Characteristics
VGS=f(Qg):ID=16A,Tch=25 °C
VGS [V]
480V
300V
Vcc= 120V
100101102103
100
101
102
103
104
C [pF]
VDS [V]
Typical Capa citan ce
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
td(on)
tr tf
td(off)
t [ns]
ID [A] 0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
IAS=7A
IAS=10A
IAS=16A
EAV [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. st arting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A
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2SK3689-01 FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pu ls e
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=50V
Av al anche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transien t T h ermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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