To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. CR03AM-12 Thyristor Low Power Use REJ03G0352-0200 Rev.2.00 Mar.01.2005 Features * IT (AV) : 0.3 A * VDRM : 600 V * IGT : 100 A * Non-Insulated Type * Glass Passivation Type Outline PRSS0003EA-A (Package name:TO-92) 2 1. Cathode 2. Anode 3. Gate 3 1 3 2 1 Applications Leakage protector, timer, and gas igniter Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 DC off-state voltageNote1 Rev.2.00, Mar.01.2005, page 1 of 7 Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) Voltage class 12 600 800 480 600 800 480 Unit V V V V V V CR03AM-12 Parameter RMS on-state current Average on-state current Symbol IT (RMS) IT (AV) Ratings 0.47 0.3 Unit A A ITSM 20 A I2 t 1.6 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- 0.5 0.1 6 6 0.3 - 40 to +110 - 40 to +125 0.23 W W V V A C C g Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine half wave 180 conduction, Ta = 47C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 1 k. Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current Symbol IRRM IDRM Min. -- -- Typ. -- -- Max. 0.1 0.1 Unit mA mA On-state voltage VTM -- -- 1.8 V Ta = 25C, ITM = 4 A, instantaneous value Gate trigger voltage VGT -- -- 0.8 V Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Gate non-trigger voltage VGD 0.2 -- -- V Tj = 110C, VD = 1/2 VDRM, RGK = 1 k Gate trigger current IGT 1 -- 100Note2 A Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Holding current IH -- 1.5 3 mA Rth (j-a) -- -- 180 C/W Tj = 25C, VD = 12 V, RGK = 1 k Junction to ambient Thermal resistance Test conditions Tj = 110C, VRRM applied Tj = 110C, VDRM applied, RGK = 1 k Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible. Item A B C D E IGT (A) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 1 k resistance between the gate and cathode. 3 IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1k Switch 2 60 TUT V1 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1k) Rev.2.00, Mar.01.2005, page 2 of 7 CR03AM-12 Performance Curves 101 7 5 3 2 Rated Surge On-State Current 20 Ta = 25C Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 100 7 5 3 2 10-1 7 5 3 2 7 5 3 2 10-1 7 5 3 2 PG(AV) = 0.1W VGT = 0.8V (Tj = 25C) IGT = 100A (Tj = 25C) VGD = 0.2V IFGM = 0.3A 6 4 2 2 3 4 5 7 101 2 3 4 5 7 102 103 7 5 3 2 Typical Example 102 7 5 3 2 101 7 5 3 2 100 -40 -20 0 20 40 60 80 100 120 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 1.0 0.9 Gate Trigger Voltage (V) x 100 (%) PGM = 0.5W VFGM = 6V 5 710-12 3 5 7 100 2 3 5 7 101 2 3 5 7 1022 3 5 Distribution 0.7 Typical Example IGT (25C) = 35A 0.6 0.5 0.4 0.3 0.2 0.1 0 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Rev.2.00, 8 Gate Trigger Current vs. Junction Temperature 10-2 0.8 10 Gate Characteristics Gate Trigger Current (Tj = tC) Gate Trigger Current (Tj = 25C) 100 12 Conduction Time (Cycles at 60Hz) Mar.01.2005, page 3 of 7 Transient Thermal Impedance (C/W) Gate Voltage (V) 7 5 3 2 14 On-State Voltage (V) 102 101 16 0 100 10-2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 7 5 3 2 18 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 180 160 140 120 100 80 60 40 20 0 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 Time (s) CR03AM-12 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 = 30 0.3 0.2 360 0.1 0 Resistive, inductive loads 0 0.1 0.2 0.4 0.3 120 Resistive, inductive loads Natural convection 100 80 60 40 = 30 90 180 60 120 20 0 0.5 0 0.1 0.2 0.3 0.5 0.4 Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 60 = 30 0.4 90 120 160 180 0.3 0.2 0.1 360 0 0.1 0.2 Ambient Temperature (C) Average Power Dissipation (W) 360 Average On-State Current (A) 0 Resistive loads 0.3 0.4 0.5 140 120 360 Resistive loads Natural convection 100 80 60 40 20 0 = 30 60 90 120 180 0 0.1 0.2 0.3 0.4 0.5 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 0.5 Average Power Dissipation (W) 140 Average On-State Current (A) 0.5 0.4 = 30 270 180 120 90 DC 60 0.3 0.2 360 0.1 Resistive, inductive loads 0 0 0.1 0.2 0.3 0.4 Average On-State Current (A) Rev.2.00, Ambient Temperature (C) 0.4 180 120 90 60 Mar.01.2005, page 4 of 7 0.5 160 Ambient Temperature (C) Average Power Dissipation (W) 0.5 Resistive, inductive loads Natural convection 140 360 120 = 30 100 60 90 80 120 180 270 DC 60 40 20 0 0 0.1 0.2 0.3 0.4 Average On-State Current (A) 0.5 RGK = 1k 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 Tj = 110C Typical Example 140 120 100 80 60 40 20 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature RGK = 1k 160 140 120 100 Tj = 25C 80 Tj = 110C 20 102 7 5 3 2 101 7 5 3 2 RGK = 1k Distribution Typical Example IGT (25C) = 35A 100 7 5 3 2 10-1 -60 -40 -20 0 20 40 60 80 100 120 140 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Junction Temperature (C) Holding Current vs. Gate to Cathode Resistance Repetitive Peak Reverse Voltage vs. Junction Temperature 500 Typical Example IGT(25C) IH(1k) 10A 1.0mA #1 26A 1.1mA #2 400 300 #1 #2 200 100 VD = 12V, Tj = 25C 0 10-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 Mar.01.2005, page 5 of 7 x 100 (%) Rate of Rise of Off-State Voltage (V/s) Gate to Cathode Resistance (k) Rev.2.00, 160 Gate to Cathode Resistance (k) 180 40 Breakover Voltage vs. Gate to Cathode Resistance Junction Temperature (C) 200 60 Breakover Voltage (RGK = rk) Breakover Voltage (RGK = 1k) Typical Example Holding Current (mA) 160 Repetitive Peak Reverse Voltage (Tj = tC) Repetitive Peak Reverse Voltage (Tj = 25C) Holding Current (RGK = rk) Holding Current (RGK = 1k) x 100 (%) Breakover Voltage (dv/dt = vV/s) Breakover Voltage (dv/dt = 1V/s) x 100 (%) Breakover Voltage (Tj = tC) Breakover Voltage (Tj = 25C) x 100 (%) Breakover Voltage vs. Junction Temperature x 100 (%) CR03AM-12 160 Typical Example 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 Junction Temperature (C) CR03AM-12 Gate Trigger Current (A) Gate Trigger Current vs. Gate Current Pulse Width 104 7 5 4 3 2 Typical Example IGT(DC) # 1 16A # 2 65A #1 103 7 5 4 3 2 #2 Tj = 25C 102 100 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (s) Rev.2.00, Mar.01.2005, page 6 of 7 CR03AM-12 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003EA-A Package Name MASS[Typ.] TO-92 Unit: mm 0.23g 5.0Max 11.5Min 5.0Max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle 0.7 Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 500 Type name Lead form Vinyl sack 500 Type name - Lead forming code Form A8 Taping 2000 Type name - TB Note : Please confirm the specification about the shipping in detail. Rev.2.00, Mar.01.2005, page 7 of 7 Standard order code example CR03AM-12 CR03AM-12-A6 CR03AM-12-TB Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. 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