SPEC NO: DSAN0645 REV NO: V.1A DATE: JUN/21/2013 PAGE: 2 OF 8
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Y.Liu ERP: 1311000150
Selection Guide
Notes:
1. Luminous intensity/ luminous Flux: +/-15%.
* Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA Description
Min. Typ.
PSC23-11SRWA Super Bright Red (GaAlAs) White Diffused 21000 36000
*3600 *8500
Common Cathode, Rt.
Hand Decimal.
Electrical / Optical Characteristics at TA=25°C
Absolute Maximum Ratings at TA=25°C
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength Super Bright Red 655 nm IF=20mA
λD[1] Dominant Wavelength Super Bright Red 640 nm IF=20mA
Δλ 1/2 Spectral Line Half-width Super Bright Red 20 nm IF=20mA
C Capacitance Super Bright Red 45 pF VF=0V;f=1MHz
VF[2] Forward Voltage
A1,A2,D1,D2,P,K
Super Bright Red 3.7 5.0 V IF=20mA
B,C,E,F,G,H,J,L,M,N
DP 1.85 2.5
IR Reverse Current
(Per chip)
A1,A2,D1,D2,P,K
Super Bright Red 10
20
10 uA VR = 5V
VR = 5V
VR = 5V
B,C,E,F,G,H,J,L,M,N
DP
Parameter Super Bright Red Units
Power dissipation
A1,A2,D1,D2,P,K 150
300
75 mW B,C,E,F,G,H,J,L,M,N
DP
DC Forward Current
A1,A2,D1,D2,P,K 30
60
30 mA
B,C,E,F,G,H,J,L,M,N
DP
Peak Forward Current [1]
A1,A2,D1,D2,P,K 155
310
155 mA B,C,E,F,G,H,J,L,M,N
DP
Reverse Voltage
(Per chip)
A1,A2,D1,D2,P,K 5
5
5
B,C,E,F,G,H,J,L,M,N
DP
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature [2] 260°C For 3-5 Seconds
V
Notes:
1. Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
3.Wavelength value is traceable to the CIE127-2007 compliant national standards.