Preliminary Data Sheet
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
ITRMS = 2x 180 A
ITAVM = 2x 104 A
VRRM = 2000-2200 V
VRSM VRRM Type
VDSM VDRM
VV
2100 2000 PSKT 94/20io1 PSKH 94/20io1
2300 2200 PSKT 94/22io1 PSKH 94/22io1
Features
●International standard package,
JEDEC TO-240 AA
●Direct Copper Bonded Al2O3 -ceramic
base plate
●Planar passivated chips
l●Isolation voltage 3600 V~
●UL registered, E 148688
●Gate-cathode twin pins for version 1
Applications
●DC motor control
● Softstart AC motor controller
●Light, heat and temperature control
Advantages
●Space and weight savings
●Simple mounting with two screws
●Improved temperature and power
cycling capability
●Reduced protection circuits
High Voltage Thyristor Module
High Voltage Thyristor/Diode Modules
PSKT94 /PSKH 94
Symbol Test Conditions Maximum Ratings
ITRMS TVJ = TVJM 180 A
ITAVM TC = 85°C; 180° sine 104 A
ITSM TVJ = 45°C; t = 10 ms (50 Hz) 1700 A
VR = 0 t = 8.3 ms (60 Hz) 1800 A
TVJ = TVJM t = 10 ms (50 Hz) 1540 A
VR = 0 t = 8.3 ms (60 Hz) 1640 A
∫∫
∫∫
∫i2dt TVJ = 45°C t = 10 ms (50 Hz) 14450 A2s
VR = 0 t = 8.3 ms (60 Hz) 13500 A2s
TVJ = TVJM t = 10 ms (50 Hz) 11850 A2s
VR = 0 t = 8.3 ms (60 Hz) 11300 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 250 A 150 A/µs
f = 50 Hz, tP = 200 µs
VD = 2/3 VDRM
IG= 0.45 A, non repetitive, IT = ITAVM 500 A/µs
diG/dt = 0.45 A/µs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 µs 10 W
IT = ITAVM tP = 300 µs 5 W
PGAV 0.5 W
VRGM 10 V
TVJ -40...125 °C
TVJM 125 °C
Tstg -40...125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2.5-4.0/22-35 Nm/lb.in.
Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in.
Weight Typical including screws 90 g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
PSKH
PSKT
3671 542
31542
6745
3
2
1
TO-240 AA
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POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
10 100 1000
1
10
100
1000
100101102103104
0.1
1
10
IG
VG
mA
mA
IG
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
µs
tgd
V
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
IGD, TVJ = 125°C
3
4
2
1
56
Limit
typ.
TVJ = 25°C
Dimensions in mm (1 mm = 0.0394") RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.22
180° 0.23
120° 0.25
60° 0.27
30° 0.28
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0066 0.0019
2 0.0678 0.0477
3 0.1456 0.344
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.42
180° 0.43
120° 0.45
60° 0.47
30° 0.48
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0066 0.0019
2 0.0678 0.0477
3 0.1456 0.344
4 0.2 1.32
Symbol Test Conditions Characteristic Values
IRRM, IDRM TVJ = TVJM; VR = VRRM 15 mA
VTIT= 300 A; TVJ = 25°C 1.74 V
VT0 For power-loss calculations only (TVJ = TVJM) 0.85 V
rT3.2 mΩ
VGT VD= 6 V; TVJ = 25°C 1.5 V
TVJ = -40°C 1.6 V
IGT VD= 6 V; TVJ = 25°C 100 mA
TVJ = -40°C 200 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM 0.25 V
IGD TVJ = TVJM;V
D = 2/3 VDRM 10 mA
ILTVJ = 25°C; VD = 6 V; tP = 30 µs 200 mA
diG/dt = 0.45 A/µs; IG = 0.45 A
IHTVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA
tgd TVJ = 25°C; VD = 1/2 VDRM 2µs
diG/dt = 0.45 A/µs; IG = 0.45 A
tqTVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 µs typ. 185 µs
dv/dt = 20 V/µs; IT = 150 A; -di/dt = 10 A/µs
QSTVJ = TVJM 170 µC
IRM -di/dt = 6 A/µs; IT = 50 A 45 A
RthJC per thyristor; DC current 0.22 K/W
per module 0.11 K/W
RthJK per thyristor; DC current 0.42 K/W
per module 0.21 K/W
dSCreeping distance on surface 12.7 mm
dACreepage distance in air 9.6 mm
aMaximum allowable acceleration 50 m/s2
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