© Semiconductor Components Industries, LLC, 2015
February, 2017 − Rev. 1
1Publication Order Number:
NVMFS5C430N/D
NVMFS5C430N
Power MOSFET
40 V, 1.7 mW, 185 A, Single N−Channel
Features
•Small Footprint (5x6 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•NVMFS5C430NWF − Wettable Flank Option for Enhanced Optical
Inspection
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 40 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJC
(Notes 1, 3) Steady
State
TC = 25°CID185 A
TC = 100°C 131
Power Dissipation
RqJC (Note 1)
TC = 25°CPD106 W
TC = 100°C 53
Continuous Drain
Current RqJA
(Notes 1, 2, 3) Steady
State
TA = 25°CID35 A
TA = 100°C 25
Power Dissipation
RqJA (Notes 1 & 2)
TA = 25°CPD3.8 W
TA = 100°C 1.9
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 900 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
+ 175
°C
Source Current (Body Diode) IS102 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 15 A)
EAS 338 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State RqJC 1.4 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA 40
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
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XXXXXX
AYWZZ
V(BR)DSS RDS(ON) MAX ID MAX
40 V 1.7 mW @ 10 V 185 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
S
S
S
G
D
D
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
1
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
XXXXXX = 5C430N
XXXXXX = (NVMFS5C430N) or
XXXXXX = 430NWF
XXXXXX = (NVMFS5C430NWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
NVMFS5C430N
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA40 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
12.8 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 40 V
TJ = 25 °C 10
mA
TJ = 125°C 100
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA2.5 3.5 V
Threshold Temperature Coefficient VGS(TH)/TJ−8.2 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 50 A 1.4 1.7 mW
Forward Transconductance gFS VDS =15 V, ID = 50 A 130 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
3300
pF
Output Capacitance COSS 1600
Reverse Transfer Capacitance CRSS 45
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 50 A 47
nC
Threshold Gate Charge QG(TH)
VGS = 10 V, VDS = 20 V; ID = 50 A
10
Gate−to−Source Charge QGS 16
Gate−to−Drain Charge QGD 7
Plateau Voltage VGP 4.7 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time td(ON)
VGS = 10 V, VDS = 20 V,
ID = 50 A, RG = 2.5 W
13
ns
Rise Time tr48
Turn−Off Delay Time td(OFF) 29
Fall Time tf8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 50 A
TJ = 25°C 0.83 1.2
V
TJ = 125°C 0.7
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
57
ns
Charge Time ta30
Discharge Time tb27
Reverse Recovery Charge QRR 68 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NVMFS5C430N
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3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
IDSS, LEAKAGE (A)
4.0 V TJ = 125°C
TJ = 25°C
TJ = −55°C
TJ = 25°C
ID = 50 A
TJ = 25°C
VGS = 10 V
VGS = 10 V
ID = 50 A
TJ = 125°C
TJ = 85°C
5.2 V VDS = 10 V
TJ = 150°C
VGS = 6 V to 10 V
0
40
80
120
160
0 0.5 1.0 1.5 2.0 2.5 3.0
200
4.4 V
4.8 V
0
25
50
75
100
150
175
200
012345 7
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3 4 5 6 7 8 9 10 10 30 50 70 90 110 130
1.60
1.50
1.30
1.20
0.6
0.8
1.0
1.2
1.4
1.8
2.0
−50 −25 0 25 50 75 100 125 150 175
1.E−07
510 20 30 40
1.55
1.40
1.25
6
125
150
1.35
1.45
1.6
15 25 35
1.E−06
1.E−05
1.E−04
NVMFS5C430N
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4
TYPICAL CHARACTERISTICS
1
10
100
1000
1 10 100
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche
VDS (V) TIME IN AVALANCHE (s)
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
IPEAK, (A)
VGS = 0 V
TJ = 25°C
f = 1 MHz
CISS
COSS
CRSS
VDS = 20 V
TJ = 25°C
ID = 50 A
QGS QGD
VGS = 10 V
VDS = 20 V
ID = 50 A
td(off)
td(on)
tf
tr
TJ = 125°C TJ = 25°C TJ = −55°C
TJ = 100°C
TJ = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
500 ms
1 ms
10 ms
TC = 25°C
VGS ≤ 10 V
Single Pulse
1
10
100
1000
0.1
1 10 1000.1
1
10
100
1E−41E−310E−2
0
2
4
6
8
10
010152030354050
1.E+01
010203040
1
10
100
0.3 0.5 0.6 0.7 0.8 0.9 1.0
5 152535
1.E+02
1.E+03
1.E+04
52545
1
3
5
7
9
0.4
TJ = 150°C
VGS = 0 V
NVMFS5C430N
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5
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 13. Thermal Characteristics
PULSE TIME (sec)
RqJA (°C/W)
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
DEVICE ORDERING INFORMATION
Device Marking Package Shipping†
NVMFS5C430NT1G 5C430N DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5C430NWFT1G 430NWF DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
NVMFS5C430NT3G 5C430N DFN5
(Pb−Free)
5000 / Tape & Reel
NVMFS5C430NWFT3G 430NWF DFN5
(Pb−Free, Wettable Flanks)
5000 / Tape & Reel
NVMFS5C430NAFT1G 5C430 DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5C430NWFAFT1G 430NWF DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVMFS5C430N
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6
PACKAGE DIMENSIONS
M3.00 3.40
q0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15
D1 4.70 4.90
D2 3.80 4.00
E6.15
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.575
K1.20 1.35
L0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 c L
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.5600.495
3.200
1.330
0.965
2X
2X
4X
4X
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
e
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SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NVMFS5C430N/D
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
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