APTG
T
150
D
A17
0D
3
APTGT150DA170D3 – Rev 0 January, 2004
APT website – http://www.advancedpower.com
1
-
3
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1700 V
T
C
= 25°C 240
I
C
Continuous Collector Current T
C
= 80°C 150
I
CM
Pulsed Collector Current T
C
= 25°C 300
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 1040 W
RBSOA Reverse Bias Safe Operation Area T
j
= 125°C 300A@1700V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1
2
3
Q2
6
7
23
5
4
6
7
1
VCES = 1700V
IC = 150A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Trench + Field Stop IGBT
®
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
• High level of integration
• Kelvin emitter for easy drive
• Low stray inductance
- M5 power connectors
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
Boost chopper
Trench IGBT
®
Power Module
http://store.iiic.cc/
APTG
T
150
D
A17
0D
3
APTGT150DA170D3 – Rev 0 January, 2004
APT website – http://www.advancedpower.com
2
-
3
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage V
GE
= 0V, I
C
= 6mA
1700
V
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V, V
CE
= 1700V 10 mA
T
j
= 25°C 2.0 2.4
V
CE(on)
Collector Emitter on Voltage V
GE
= 15V
I
C
= 150A T
j
= 125°C 2.4 V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 6mA 5.2 5.8 6.4 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 800 nA
Dynamic Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
C
ies
Input Capacitance 12
C
res
Reverse Transfer Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1MHz 0.45 nF
T
d(on)
Turn-on Delay Time 200
T
r
Rise Time 100
T
d(off)
Turn-off Delay Time 750
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 150A
R
G
= 9.1Ω 100
ns
T
d(on)
Turn-on Delay Time 230
T
r
Rise Time 100
T
d(off)
Turn-off Delay Time 900
T
f
Fall Time 200
ns
E
off
Turn Off Energy
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 150A
R
G
= 9.1Ω
50 mJ
Reverse diode ratings and characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 1.8 2.2
V
F
Diode Forward Voltage I
F
= 150A
V
GE
= 0V T
j
= 125°C 1.9 V
T
j
= 25°C 20
E
r
Reverse Recovery Energy I
F
= 150A
V
R
= 900V
di/dt =990A/µs T
j
= 125°C 35 mJ
T
j
= 25°C 40
Q
rr
Reverse Recovery Charge I
F
= 150A
V
R
= 900V
di/dt =990A/µs
T
j
= 125°C 65 µC
Thermal and package characteristics
Symbol
Characteristic Min Typ Max Unit
IGBT 0.12
R
thJC
Junction to Case Diode 0.21 °C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz 2500 V
T
J
Operating junction temperature range -40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 125
°C
For terminals M6 3 5
Torque Mounting torque To Heatsink M6 3 5 N.m
Wt Package Weight 380 g
http://store.iiic.cc/
APTG
T
150
D
A17
0D
3
APTGT150DA170D3 – Rev 0 January, 2004
APT website – http://www.advancedpower.com
3
-
3
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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