110A
PHASE CONTROL THYRISTORS Stud Version
111RKI SERIES
Bulletin I25152/B
Features
High current and high surge ratings
dv/dt = 1000V/µs option
Ceramic housing
Threaded studs UNF 1/2 - 20UNF2A
Types up to 1200V VRRM/VDRM
di/dt = 300A/µs
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 110 A
@ TC90 °C
IT(RMS) 172 A
ITSM @ 50Hz 2080 A
@ 60Hz 2180 A
I2t@ 50Hz 21.7 KA2s
@ 60Hz 19.8 KA2s
VDRM/VRRM 400 to 1200 V
tqtypical 110 µs
TJ- 40 to 140 °C
Parameters 111RKI Units
Major Ratings and Characteristics
case style
TO-209AC (TO-94)
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max.
V V mA
40 400 500
111RKI 80 800 900 20
120 1200 1300
IT(AV) Max. average on-state current 110 A180° conduction, half sine wave
@ Case temperature 90 °C
IT(RMS) Max. RMS on-state current 172 DC @ 83°C case temperature
ITSM Max. peak, one-cycle 2080 t = 10ms No voltage
non-repetitive surge current 2180 At = 8.3ms reapplied
1750 t = 10ms100% VRRM
1830 t = 8.3ms reapplied Sinusoidal half wave,
I2tMaximum I2t for fusing 21.7 t = 10ms No voltage Initial TJ = TJ max.
19.8 t = 8.3ms reapplied
15.3 t = 10ms 100% VRRM
14.0 t = 8.3ms reapplied
I2√tMaximum I2√t for fusing 217 KA2√st = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.57 VIpk= 350A, TJ = TJ max., tp = 10ms sine pulse
IHMaximum holding current 150
ILTypical latching current 400
0.82 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
2.16 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.70 (I > π x IT(AV)),TJ = TJ max.
Parameter 111RKI Units Conditions
1.02 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25°C, anode supply 6V resistive load
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 50A, TJ = TJ max., di/dt = -5A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 25Ω
Parameter 111RKI Units Conditions
tdTypical delay time 1
Switching
tqTypical turn-off time 110 µs
300 A/µs
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dv/dt Maximum critical rate of rise of
off-state voltage
IRRM Max. peak reverse and off-state
IDRM leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated VDRM
Parameter 111RKI Units Conditions
20 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 12 TJ = TJ max, tp ≤ 5ms
PG(AV) Maximum average gate power 3.0 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 ATJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required TJ = - 40°C
to trigger mA TJ = 25°C
TJ = 140°C
VGTDC gate voltage required TJ = - 40°C
to trigger VTJ = 25°C
TJ = 140°C
IGD DC gate current not to trigger 6.0 mA
Parameter 111RKI Units Conditions
20
10
Triggering
TJ = TJ max
TYP. MAX.
180 -
80 100
40 -
2.5 -
1.6 2
1-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
VTJ = TJ max, tp ≤ 5ms
TJMax. operating temperature range -40 to 140
Tstg Max. storage temperature range -40 to 150
RthJC Max. thermal resistance,
junction to case
RthCS Max. thermal resistance,
case to heatsink
TMounting torque, ± 10% 15.5 Non lubricated threads
(137)
14 Lubricated threads
(120)
wt Approximate weight 130 g
Parameter 111RKI Units Conditions
0.27 DC operation
0.1 Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
°C
K/W
Nm
(lbf-in)
Case style TO - 209AC (TO-94) See Outline Table
VGD DC gate voltage not to trigger 0.25 V
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∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
180° 0.043 0.031 TJ = TJ max.
120°0.052 0.053
90°0.066 0.071 K/W
60°0.096 0.101
30° 0.167 0.169
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
Ordering Information Table
3
11 1 RKI 120
Device Code
1 2 5
4
1-IT(AV) rated average output current (rounded/10)
2-0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
3-Thyristor
4-Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
5-Critical dv/dt: None =500V/µsec
S90 =1000V/µsec
Outline Table
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
10
1/2"-20UNF-2A
29.5 (1.16)
MAX.
MAX.
40 (1.57)
10
7.5
(0.30)
22.5 DIA.
16.5
(0 .65)
10 (0.39) M AX.
5.2 (0.20) DIA.
24 (0.94)
(0 39)
(0.89) MAX.
21(0.83)
1.5 (0.06) DIA.
(0.39)
44 (1.73)
CERAMIC HOUSING
FLAG TERMINAL
SW 27
2.4 (0.09)
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Outline Table
Fast-on Terminals
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
C.S. 0.4 m m
2
215 (8.4 6)1 0 (0.3 9 )
WHITE GATE
RED SH RINK
RED CATHODE
RED SILICON R UB BER
4.3 (0.17 ) DIA.
21 (0.83)
10 (0.39 ) M AX.
157 (6 .1 8)
170 (6.6 9 )
(.00 06 s.i.)
8.5 (0.3 3) DIA.
1 6.5 (0.6 5 ) MAX.
M AX .
55 (2.1 6) M IN .
CERAMIC HOUSING
2 2.5 (0.8 8) MAX. DIA.
24 (0.94 ) M AX .
SW 27
C.S. 1 6m m
2
FLE XIBLE LEAD
(.025 s.i.)
2.6 (0.10 ) MAX.
9.5 (0.37) MIN.
WHITE SHR INK
20 (0.79) MIN.
2 9.5 (1.16 ) MAX.
1/2"-2 0UNF-2A
AMP. 280000-1
REF-250
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