2N918
NPN SILICON RF TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N918 type
is an NPN silicon RF transistor, manufactured by
the epitaxial planar process and designed for high
frequency amplifier and oscillator applications.
MARKING: FULL PART NUMBER
TO-72 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 3.0 V
Continuous Collector Current IC 50 mA
Power Dissipation PD 200 mW
Power Dissipation (TC=25°C) PD 300 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 87.5 °C/W
Thermal Resistance ΘJC 58.3 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=15V 10 nA
ICBO V
CB=15V, TA=150°C 1.0 μA
BVCBO I
C=1.0μA 30 V
BVCEO I
C=3.0mA 15 V
BVEBO I
E=10μA 3.0 V
VCE(SAT) I
C=10mA, IB=1.0mA 0.4 V
VBE(SAT) I
C=10mA, IB=1.0mA 1.0 V
hFE V
CE=1.0V, IC=3.0mA 20
fT V
CE=10V, IC=4.0mA, f=100MHz 600 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 1.7 pF
Cob V
EB=0, IE=0, f=1.0MHz 3.0 pF
Cib V
EB=0.5V, IC=0, f=1.0MHz 2.0 pF
Po V
CB=15V, IC=8.0mA, f=500MHz 30 mW
Gpe V
CB=12V, IC=6.0mA, f=200MHz 15 dB
V
CB=15V, IC=8.0mA, f=500MHz 25 %
NF VCE=6.0V, IC=1.0mA,
R
G=400Ω, f=60kHz 6.0 dB
R1 (11-September 2012)
www.centralsemi.com
2N918
NPN SILICON RF TRANSISTOR
LEAD CODE:
1) Emitter
2) Base
3) Collector
4) Case
MARKING:
FULL PART NUMBER
TO-72 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (11-September 2012)
