DMP6250SE-13 - DIODES INC - Product.Network

DMP6250SE

Document Number DS36696 Rev. 2 - 2

1 of 7

www.diodes.com

September 2017

DMP6250SE

ADVANCE INFO R MA T I O N

NEW PRODUCT

60V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

BVDSS

RDS(ON) Max

ID

TA = +25C

-60V

250m @ VGS = -10V

-2.1A

300m @ VGS = -4.5V

-1.9A

Description

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

Applications

 Motor Control

 DC-DC Converters

 Power Management Functions

 Uninterrupted Power Supply

Features and Benefits

 Low Gate Drive

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT223

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals Connections: See Diagram Below

 Terminals: Finish - Matte Tin Annealed over Copper Lead Frame.

Solderable per MIL-STD-202, Method 208

 Weight: 0.112 grams (Approximate)

Ordering Information (Note 4)

Part Number

Qualification

Case

Packaging

DMP6250SE-13

Standard

SOT223

2,500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

Top View

SOT223

e3

Equivalent Circuit

P6250

YWW

D

S

G

Pin Out - Top View

= Manufacturer’s Marking

P6250 = Marking Code

YWW = Date Code Marking

Y or Y= Year (ex: 7 = 2017)

WW = Week (01 to 53)

DMP6250SE

Document Number DS36696 Rev. 2 - 2

2 of 7

www.diodes.com

September 2017

DMP6250SE

ADVANCE INFO R MA T I O N

NEW PRODUCT

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-60

V

Gate-Source Voltage (Note 5)

VGS

20

V

Continuous Drain Current (Note 6) VGS = -10V

TA = +25°C

TA = +70°C

ID

-2.1

-1.7

A

TC = +25°C

TC = +70°C

ID

-6.1

-4.9

A

Maximum Body Diode Continuous Current

IS

-1.8

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

-11

A

Single Pulsed Avalanche Current (Note 7) L = 0.1mH

IAS

-12

A

Single Pulsed Avalanche Energy (Note 7) L = 0.1mH

EAS

8

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

TA = +25°C

PD

1.8

W

TA = +70°C

1.1

Thermal Resistance, Junction to Ambient (Note 6)

RθJA

69

°C/W

Total Power Dissipation (Note 6)

TC = +25°C

PD

14

W

Thermal Resistance, Junction to Case (Note 6)

RθJC

8.7

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-60



V

ID = -250µA, VGS = 0V

Zero Gate Voltage Drain Current

IDSS



-1

µA

VDS = -60V, VGS = 0V

Gate-Source Leakage

IGSS



100

nA

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

-1



-3

V

VDS= VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS(ON)



128

250

mΩ

VGS = -10V, ID = -1.0A

128

250

VGS = -10V, ID = -1.9A

156

300

VGS = -4.5V, ID = -0.5A

158

300

VGS = -4.5V, ID = -1.5A

Diode Forward Voltage

VSD



-1.2

V

VGS = 0V, IS = -2.0A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss



551



pF

VDS = -30V, VGS = 0V

f= 1MHz

Output Capacitance

Coss



25.7



pF

Reverse Transfer Capacitance

Crss



19.1



pF

Gate Resistance

Rg



12.1



Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -4.5V)

Qg



4.8



nC

VDS = -30V, ID = -2A

Total Gate Charge (VGS = -10V)

Qg



9.7



nC

Gate-Source Charge

Qgs



1.5



nC

Gate-Drain Charge

Qgd



1.6



nC

Turn-On Delay Time

tD(ON)



6.3



ns

VDS = -30V, VGS = -10V,

RG = 50Ω, ID = -1A

Turn-On Rise Time

tR



10.3



ns

Turn-Off Delay Time

tD(OFF)



91.4



ns

Turn-Off Fall Time

tF



39.8



ns

Reverse Recovery Time

tRR



9.2



ns

IS = -1A, di/dt= 100A/µs

Reverse Recovery Charge

QRR



3.9



nC

Notes: 5. AEC-Q101 VGS maximum is 16V.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. For design aid only, not subject to production testing.

DMP6250SE

Document Number DS36696 Rev. 2 - 2

3 of 7

www.diodes.com

September 2017

DMP6250SE

ADVANCE INFO R MA T I O N

NEW PRODUCT

-V , DRAIN -SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

DS

-I , DRAIN CURRENT (A)

D

0

2

4

6

8

10

0 1 2 3 4 5

V = -3.0V

GS

V = -2.5V

GS

V = -4.0V

GS

V = -4.5V

GS

V = -10V

GS

-V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

-I , DRAIN CURRENT (A)

D

0

1

2

3

4

5

6

7

8

0 1 2 3 4 5

T = 150 C

A

T = 125 C

A

T = 85 C

A

T = 25 C

A

T = -55 C

A

V = -5.0V

DS

-I , DRAIN SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0

0.04

0.08

0.12

0.16

0.2

0.24

0.28

0.32

0.36

0.4

0 2 4 6 8 10

V = -4.5V

GS

V = -10V

GS

-V , GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Transfer Characteristics

GS

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

0 2 4 6 8 10 12 14 16 18 20

I = -1.0A

D

I = -0.5A

D

-I , DRAIN SOURCE CURRENT (A)

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

0 1 2 3 4 5 6 7 8

T = -55 C

A

T = 25 C

A

T = 85 C

A

T = 125 C

A

T = 150 C

A

V = -10V

GS

T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation with Temperature

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

0.6

0.8

1

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

V = -4.5V

I = -0.5A

GS

D

V = -10V

I = -1.0A

GS

D

DMP6250SE

Document Number DS36696 Rev. 2 - 2

4 of 7

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September 2017

DMP6250SE

ADVANCE INFO R MA T I O N

NEW PRODUCT

T , JUNCTION TEMPERATURE ( C)

J

Figure 7 On-Resistance Variation with Temperature

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(on) 

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

-50 -25 0 25 50 75 100 125 150

V = -10V

I = A

GS

D

-1.0

V = 5V

I = A

GS

D

-4.

-0.5

C , JUNCTION CAPACITANCE (pF)

T

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

DS

10

100

1000

0 5 10 15 20 25 30 35 40

f = 1MHz

Coss

Crss

Ciss

Q , TOTAL GATE CHARGE (nC)

Figure 11 Gate-Charge Characteristics

g

-V , GATE-SOURCE VOLTAGE (V)

GS

0

2

4

6

8

10

0 2 4 6 8 10

V = -30V

I = -2A

DS

D

T , AMBIENT TEMPERATURE (°C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

A

V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(

T

H

)

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

-50

-25

0

25

50

75

100

125

150

-I =1mA

D

-I = 250µA

D

VGS(TH), GATE THRESHOLD VOLTAGE (V)

-V , SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

SD

-

I

,

S

O

U

R

C

E

C

U

R

E

N

T

(

A

)

S

0

1

2

3

4

5

6

7

8

9

10

0

0.3

0.6

0.9

1.2

1.5

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

-IS, SOURCE CURRENT (A)

VGS = 0V

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

-

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

0.01

0.1

1

10

100

0.1

1

10

100

R

Limited

DS(ON)

T = 150°C

T = 25°C

J(max)

A

V = -10V

Single Pulse

GS

DUT on 1 * MRP Board

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

-ID, DRAIN CURRENT (A)

DMP6250SE

Document Number DS36696 Rev. 2 - 2

5 of 7

www.diodes.com

September 2017

DMP6250SE

ADVANCE INFO R MA T I O N

NEW PRODUCT

t1, PULSE DURATION TIMES (sec)

Figure 13 Transient Thermal Resistance

r(t), TRANSIENT THERMAL RESISTANCE

D = 0.7

D = 0.9

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

Single Pulse

R (t) = r(t) * R

R = 100

癈

/W

Duty Cycle, D = t1/ t2





JA JA

JA

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

100°C/W

t1, PULSE DURATION TIME (sec)

DMP6250SE

Document Number DS36696 Rev. 2 - 2

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September 2017

DMP6250SE

ADVANCE INFO R MA T I O N

NEW PRODUCT

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT223

A1

A

7°

D

b

e

e1

b1

C

E1

L

0° -10°

Q

E

0.25

Seating

Plane

Gauge

Plane

SOT223

Dim

Min

Max

Typ

A

1.55

1.65

1.60

A1

0.010

0.15

0.05

b

0.60

0.80

0.70

b1

2.90

3.10

3.00

C

0.20

0.30

0.25

D

6.45

6.55

6.50

E

3.45

3.55

3.50

E1

6.90

7.10

7.00

e

-

4.60

e1

-

2.30

L

0.85

1.05

0.95

Q

0.84

0.94

0.89

All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT223

Dimensions

Value (in mm)

C

2.30

C1

6.40

X

1.20

X1

3.30

Y

1.60

Y1

1.60

Y2

8.00

X1

Y1

Y

XC

C1 Y2

DMP6250SE

Document Number DS36696 Rev. 2 - 2

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September 2017

DMP6250SE

ADVANCE INFO R MA T I O N

NEW PRODUCT

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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