NE3514S02-T1C-A - CEL - Product.Network

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3514S02

K BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

• Super low noise figure and high associated gain

NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz

• Micro-X plastic (S02) package

APPLICATIONS

• 20 GHz-band DBS LNB

• Other K-band communication systems

ORDERING INFORMATION

Part Number Order Number Package Quantity Marking Supplying Form

NE3514S02-T1C NE3514S02-T1C-A 2 kpcs/reel D

NE3514S02-T1D NE3514S02-T1D-A

S02 (Pb-Free)

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 4 (Gate) faces the perforation side

of the tape

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3514S02

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter Symbol Ratings Unit

Drain to Source Voltage VDS 4 V

Gate to Source Voltage VGS −3 V

Drain Current ID IDSS mA

Gate Current IG 100

Total Power Dissipation Ptot Note 165 mW

Channel Temperature Tch +125 °C

Storage Temperature Tstg −65 to +125 °C

Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB

Document No. PG10593EJ01V0DS (1st edition)

Date Published February 2006 CP(N)

NE3514S02

RECOMMENDED OPERATING CONDITIONS (TA = +25°C)

Parameter Symbol MIN. TYP. MAX. Unit

Drain to Source Voltage VDS 1 2 3 V

Drain Current ID 5 10 15 mA

Input Power Pin − − 0 dBm

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Gate to Source Leak Current IGSO VGS = −3 V − 0.5 10

Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 15 40 70 mA

Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 100

A −0.2 −0.7 −2.0 V

Transconductance gm VDS = 2 V, ID = 10 mA 40 55 − mS

Noise Figure NF VDS = 2 V, ID = 10 mA, f = 20 GHz − 0.75 1.0 dB

Associated Gain Ga 8 10 − dB

Data Sheet PG10593EJ01V0DS

NE3514S02

TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)

Total Power Dissipation Ptot (mW)

Ambient Temperature TA (˚C)

vs. AMBIENT TEMPERATURE

TOTAL POWER DISSIPATION

250

200

150

100

050 100 150 200 250

–2.0 –1.0 0

Drain Current ID (mA)

Gate to Source Voltage VGS (V)

DRAIN CURRENT vs.

GATE TO SOURCE VOLTAGE

VDS = 2 V

NFmin

VDS = 2 V

ID = 10 mA

Drain Current ID (mA)

Drain to Source Voltage VDS (V)

DRAIN TO SOURCE VOLTAGE

DRAIN CURRENT vs.

100

01.0 2.0

VGS = 0 V

–0.2 V

–0.4 V

–0.6 V

Mounted on Glass Epoxy PCB

(1.08 cm2 × 1.0 mm (t) )

Frequency f (GHz)

Minimum Noise Figure NFmin (dB)

Associated Gain Ga (dB)

ASSOCIATED GAIN vs. FREQUENCY

MINIMUM NOISE FIGURE,

2.0

1.2

1.4

1.6

1.8

0.6

0.8

1.0

0.2

0.4

0.0

10 150 5 20 25 30

Remark The graphs indicate nominal characteristics.

Data Sheet PG10593EJ01V0DS 3

NE3514S02

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave] → [Device Parameters]

URL http://www.ncsd.necel.com/

Data Sheet PG10593EJ01V0DS

NE3514S02

RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)

13.0

2.80

L2–uX Ver. 1

1.7 mm/R.P.

2.60

2.06

2.6

1.7 1.7

Reference Plane

(Calibration Plane) Reference Plane

(Calibration Plane)

6.0

0.64

0.74

2.06

0.54

0.3 TH

RT/duroid 5880/ROGERS

t = 0.254 mm

εr = 2.20

tan delta = 0.0009 @10 GHz

Data Sheet PG10593EJ01V0DS 5

NE3514S02

PACKAGE DIMENSIONS

S02 (UNIT: mm)

PIN CONNECTIONS

1. Source

2. Drain

3. Source

4. Gate

(Top View)

(Side View)

(Bottom View)

0.5 TYP.

2.6±0.1

0.65 TYP.

3.2±0.2

2.2±0.2

3.2±0.2

1.7

1.5 MAX.

0.15±0.05

2.2±0.2

Data Sheet PG10593EJ01V0DS

NE3514S02

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered and mounted under the following recommended conditions. For soldering

methods and conditions other than those recommended below, contact your nearby sales office.

Soldering Method Soldering Conditions Condition Symbol

Infrared Reflow Peak temperature (package surface temperature) : 260°C or below

Time at peak temperature : 10 seconds or less

Time at temperature of 220°C or higher : 60 seconds or less

Preheating time at 120 to 180°C : 120±30 seconds

Maximum number of reflow processes : 3 times

Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below

IR260

Partial Heating Peak temperature (terminal temperature) : 350°C or below

Soldering time (per side of device) : 3 seconds or less

Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below

HS350

Caution Do not use different soldering methods together (except for partial heating).

Data Sheet PG10593EJ01V0DS 7

4590 Patrick Henry Drive

Santa Clara, CA 95054-1817

Telephone: (408) 919-2500

Facsimile:

(

408

)

988-0279

Subject: Compliance with EU Directives

CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant

with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous

Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive

2003/11/EC Restriction on Penta and Octa BDE.

CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates

that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are

exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.

All devices with these suffixes meet the requirements of the RoHS directive.

This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that

go into its products as of the date of disclosure of this information.

Restricted Substance

per RoHS Concentration Limit per RoHS

(values are not yet fixed) Concentration contained

in CEL devices

-A -AZ

Lead (Pb) < 1000 PPM Not Detected (*)

Mercury < 1000 PPM Not Detected

Cadmium < 100 PPM Not Detected

Hexavalent Chromium < 1000 PPM Not Detected

PBB < 1000 PPM Not Detected

PBDE < 1000 PPM Not Detected

If you should have any additional questions regarding our devices and compliance to environmental

standards, please do not hesitate to contact your local representative.

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content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information

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