Semiconductor Components Industries, LLC, 2001
March, 2000 – Rev. 2 1Publication Order Number:
MMSD4148T1/D
MMSD4148T1
Switching Diode
The switching diode has the following features:
•SOD–123 Surface Mount Package
•High Breakdown Voltage
•Fast Speed Switching Time
•Available in 8 mm Tape and Reel
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR100 Vdc
Peak Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board (1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient RJA 556 °C/W
Total Device Dissipation
Alumina Substrate (2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance Junction to Ambient RJA 417 °C/W
Junction and Storage
Temperature Range TJ, Tstg –55 to
+150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 µAdc) V(BR) 100 — Vdc
Reverse Voltage Leakage Current (VR = 20 Vdc)
(VR = 75 Vdc) IR—
—25
5.0 nAdc
Adc
Forward Voltage (IF = 10 mAdc) VF— 1000 mVdc
Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz) CD— 4.0 pF
Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr — 4.0 ns
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
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Device Package Shipping
ORDERING INFORMATION
MMSD4148T1 SOD–123 3000 / Tape & Reel
PLASTIC
SOD–123
CASE 425
1
CATHODE
2
ANODE
1
2
5I
DEVICE MARKING
MMSD4148T1
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2
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2 k
820 Ω
0.1 µF
DUT
VR
100 µH
0.1 µF
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
IR, REVERSE CURRENT (A)µ
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001 10 20 30 40 50
0.68
0
VR, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
CD, DIODE CAPACITANCE (pF)
246 8
IF, FORWARD CURRENT (mA)
TA = 25°C
TA = -40°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
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3
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device
which in this case is 225 milliwatts.
INFORMATION FOR USING THE SOD–123 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOD–123 POWER DISSIPATION
PD = TJ(max) – TA
RθJA
PD = 150°C – 25°C
556°C/W = 225 milliwatts
The power dissipation of the SOD–123 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined by T J(max), the maximum rated junction tempera-
ture of the die, RθJA, the thermal resistance from the
device junction to ambient, and the operating tempera-
ture, TA. Using the values provided on the data sheet for
the SOD–123 package, PD can be calculated as follows:
The 556°C/W for the SOD–123 package assumes the
use of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225 milli-
watts. There are other alternatives to achieving higher
power dissipation from the SOD–123 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the
same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device
is heated to a high temperature, failure to complete
soldering within a short time could result in device
failure. Therefore, the following items should always be
observed in order to minimize the thermal stress to which
the devices are subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of
the leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet.
When using infrared heating with the reflow
soldering method, the difference shall be a maximum
of 10°C.
•The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•After soldering has been completed, the device
should be allowed to cool naturally for at least three
minutes. Gradual cooling should be used as the use
of forced cooling will increase the temperature
gradient and result in latent failure due to mechanical
stress.
•Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause exces-
ih lhkd hih lid
SOD–123
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
mm
inches
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
MMSD4148T1
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4
PACKAGE DIMENSIONS
SOD–123
PLASTIC PACKAGE
CASE 425–04
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. CATHODE
2. ANODE
ÂÂÂ
ÂÂÂ
B
D
K
AC
E
J
1
2
H
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.055 0.071 1.40 1.80
B0.100 0.112 2.55 2.85
C0.037 0.053 0.95 1.35
D0.020 0.028 0.50 0.70
E0.004 --- 0.25 ---
H0.000 0.004 0.00 0.10
J--- 0.006 --- 0.15
K0.140 0.152 3.55 3.85
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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Email: r14525@onsemi.com
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MMSD4148T1/D
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