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MRF21085LR3 MRF21085LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
!Typical 2--Carrier W--CDMA Performance: VDD =28Volts,I
DQ = 1000 mA,
Pout = 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84
MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13.6 dB
Drain Efficiency — 23%
IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth
!Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
Features
!Internally Matched for Ease of Use
!High Gain, High Efficiency and High Linearity
!Integrated ESD Protection
!Designed for Maximum Gain and Insertion Phase Flatness
!Excellent Thermal Stability
!Characterized with Series Equivalent Large--Signal Impedance Parameters
!Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40"# Nominal.
!RoHS Compliant
!In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --0.5, +15 Vdc
Total Device Dissipation @ TC=25$C
Derate above 25$C
PD224
1.28
W
W/$C
Storage Temperature Range Tstg -- 65 to +150 $C
Case Operating Temperature TC150 $C
Operating Junction Temperature TJ200 $C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R%JC 0.78 $C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M3 (Minimum)
Document Number: MRF21085
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
MRF21085LR3
MRF21085LSR3
2110--2170 MHz, 90 W, 28 V
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF21085LR3
CASE 465A--06, STYLE 1
NI--780S
MRF21085LSR3
&Freescale Semiconductor, Inc., 2006, 2010.
A
ll rights reserved.
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RF Device Data
Freescale Semiconductor
MRF21085LR3 MRF21085LSR3
Table 4. Electrical Characteristics (TC=25$C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D= 100 "Adc)
V(BR)DSS 65 — — Vdc
Zero Gate Voltage Drain Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 10 "Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 "Adc
On Characteristics (DC)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 200 "Adc)
VGS(th) 2 — 4 Vdc
Gate Quiescent Voltage
(VDS =28Vdc,I
D= 1000 mAdc)
VGS(Q) 33.9 5Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2Adc)
VDS(on) —0.18 0.21 Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS =28Vdc,V
GS =0,f=1.0MHz)
Crss —3.6 —pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3
measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Common--Source Amplifier Power Gain
(VDD =28Vdc,P
out =19WAvg.,I
DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Gps 12 13.6 —dB
Drain Efficiency
(VDD =28Vdc,P
out =19WAvg.,I
DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
'20 23 — %
Third Order Intermodulation Distortion
(VDD =28Vdc,P
out =19WAvg.,I
DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 --10 MHz and f2 +10 MHz
referenced to carrier channel power.)
IM3 —--37.5 -- 3 5 dBc
Adjacent Channel Power Ratio
(VDD =28Vdc,P
out =19WAvg.,I
DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 --5 MHz and f2 +5 MHz.)
ACPR —-- 4 1 -- 3 8 dBc
Input Return Loss
(VDD =28Vdc,P
out =19WAvg.,I
DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
IRL — -- 1 2 -- 9 dB
1. Part is internally matched both on input and output.
(continued)
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RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC=25$C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) (continued)
Two--Tone Common--Source Amplifier Power Gain
(VDD =28Vdc,P
out = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps —13.6 —dB
Two--Tone Drain Efficiency
(VDD =28Vdc,P
out = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
'—36 — %
Two--Tone Intermodulation Distortion
(VDD =28Vdc,P
out = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD —-- 3 1 —dBc
Input Return Loss
(VDD =28Vdc,P
out = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IRL — -- 1 2 —dB
Pout, 1 dB Compression Point
(VDD =28Vdc,I
DQ = 1000 mA, f = 2170 MHz)
P1dB —100 — W
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RF Device Data
Freescale Semiconductor
MRF21085LR3 MRF21085LSR3
Figure 1. MRF21085L Test Circuit Schematic
RF
INPUT
RF
OUTPUT
Z1 Z2
VBIAS
C1 C6
L1
DUT
VSUPPLY
Z3
C8
Z7
C5 C7
Z5 Z6
R4
C4
Z4
+
C9
C3 C2
Z8
C10 C11 C12
++
+
B1
R1
R2
R3
Board 0.030#Glass Teflon(,
Keene GX--0300--55--22, )r=2.55
PCB Etched Circuit Boards
MRF21085 Rev. 3, CMR
Z1 0.750#x 0.084#Microstrip
Z2 1.015#x 0.084#Microstrip
Z3 0.480#x 0.800#Microstrip
Z4 0.750#x 0.050#Microstrip
Z5 0.610#x 0.800#Microstrip
Z6 0.885#x 0.084#Microstrip
Z7 0.720#x 0.084#Microstrip
Z8 0.800#x 0.070#Microstrip
Table 5. MRF21085 Test Circuit Component Designations and Values
Designators Description
B1 Short Ferrite Bead, Fair Rite, #2743019447
C1, C6 43 pF Chip Capacitors, ATC #100B430JCA500X
C2 10 pF Chip Capacitor, ATC #100B100JCA500X
C3, C9 1000 pF Chip Capacitors, ATC #100B102JCA500X
C4, C10 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
C5 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050
C7 2.7 pF Chip Capacitor, ATC #100B2R7JCA500X
C8 10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394
C11, C12 22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394
L1 1 Turn, #20 AWG, 0.100#ID
N1, N2 Type N Flange Mounts, Omni Spectra #3052--1648--10
R1 1.0 k*, 1/8 W Chip Resistor
R2 180 k*, 1/8 W Chip Resistor
R3, R4 10 *, 1/8 W Chip Resistors
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MRF21085LR3 MRF21085LSR3
5
RF Device Data
Freescale Semiconductor
Figure 2. MRF21085L Test Circuit Component Layout
MRF21085
R1
R2 R3
C5 C4
C3
C1 C6
C12
C8
C7
C2
C11
L1
B1
CUT OUT
C10
C9
R4
WB1 WB2
Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
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RF Device Data
Freescale Semiconductor
MRF21085LR3 MRF21085LSR3
TYPICAL CHARACTERISTICS
-- 5 5
-- 5 0
-- 4 5
-- 4 0
-- 3 5
-- 3 0
-- 2 5
104
Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
Figure 4. Intermodulation Distortion
Products versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
, DRAIN EFFICIENCY (%),'Gps , POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS Avg.) N-CDMA
IM3 (dBc), ACPR (dBc)
f, FREQUENCY (MHz)
INPUT RETURN LOSS (dB) , DRAIN EFFICIENCY (%)'
Figure 6. 2-Carrier W-CDMA Broadband
Performance
Figure 7. CW Performance
0
5
10
15
20
25
30
-- 5 5
-- 5 0
-- 4 5
-- 4 0
-- 3 5
-- 3 0
-- 2 5
110
30
VDD =28Vdc,I
DQ = 1000 mA
f1 = 2135 MHz, f2 = 2145 MHz
3.84 MHz Channel Bandwidth
-- 4 5
-- 6 0
-- 5 0
-- 4 0
-- 3 0
-- 2 5
5
10
25
30
35
45
10
'
4
INTERMODULATION DISTORTION (dBc)IMD,
Pout, OUTPUT POWER (WATTS) PEP
VDD =28Vdc
IDQ = 1000 mA
f1 = 2135 MHz
f2 = 2145 MHz
, DRAIN EFFICIENCY (%),'Gps , POWER GAIN (dB)
IM3 (dBc), ACPR (dBc), IRL,
1150 mA
1300 mA
1000 mA
IDQ = 700 mA
850 mA
12
14
16
18
20
22
24
-- 6 0
-- 5 0
-- 4 0
-- 3 0
-- 2 0
-- 1 0
0
2110 2130 2150 2190
VDD =28Vdc
Pout =19W(Avg.)
IDQ = 1000 mA
Gps
ACPR
'
IRL
Pout, OUTPUT POWER (WATTS)
Gps, POWER GAIN (dB)
11.5
12
12.5
13
13.5
14
14.5
0
10
20
30
40
50
60
10 1002 130
VDD =28Vdc
IDQ = 1000 mA
f = 2140 MHz
Gps
'
, DRAIN EFFICIENCY (%)'
'
IM3
Gps
ACPR 15
100
-- 6 5
7th Order
5th Order
3rd Order
100
VDD =28Vdc
f1 = 2135 MHz
f2 = 2145 MHz
2090 2170
IM3
40
34
35
36
37
38
-- 3 2
-- 3 1
-- 3 0
-- 2 9
-- 2 8
-- 2 7
24 25 26 27 28 29
VDD, DRAIN SUPPLY (V)
Figure 8. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
INTERMODULATION DISTORTION (dBc)IMD,
, DRAIN EFFICIENCY (%)'
'
IDQ = 1000 mA
f = 2140 MHz
10 MHz Tone Spacing
IMD
39
-- 2 6
Peak/Avg. = 8.3 dB @ 0.01% Probability(CCDF)
-- 5 5
-- 3 5
20
40
41
42
-- 2 5
-- 2 4
2-Carrier W-CDMA
10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability(CCDF)
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MRF21085LR3 MRF21085LSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Pout, OUTPUT POWER (WATTS) PEP
Gps, POWER GAIN (dB)
14.5
12.5
13
13.5
14
104
Figure 9. Two-Tone Power Gain versus
Output Power
Figure 10. Two-Tone Broadband Performance
10
15
20
25
30
35
40
-- 4 0
-- 3 5
-- 3 0
-- 2 5
-- 2 0
-- 1 5
-- 1 0
2095 2110 2125 2140 2155 2170 2185
IDQ = 1300 mA
1150 mA
700 mA
Gps, POWER GAIN (dB), , DRAIN EFFICIENCY (%)'
'
INTERMODULATION DISTORTION (dBc)IMD,
f, FREQUENCY (MHz)
INPUT RETURN LOSS (dB)IRL,
IRL
IDQ = 1000 mA
10 MHz Tone Spacing
Figure 11. Intermodulation Distortion Products
versus Two--Tone Spacing
-- 2 0
0.1 1 30
Δf, TONE SPACING (kHz)
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
-- 5 5
INTERMODULATION DISTORTION (dBc)IMD,
VDD =28Vdc
IDQ = 1000 mA
f = 2140 MHz
VDD =28Vdc
Pout = 90 W (PEP)
100
1000 mA
850 mA
VDD =28Vdc
f1 = 2135 MHz
f2 = 2145 MHz
7th Order
5th Order
3rd Order
10
-- 2 5
IMD
Gps
Figure 12. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
-- I M 3 i n
3.84 MHz BW
+IM3 in
3.84 MHz BW
--ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
(dB)
+20
+30
0
-- 1 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
-- 8 0
-- 2 0
20515100-- 5-- 1 0-- 1 5-- 2 0--25 25
-- 3 0
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RF Device Data
Freescale Semiconductor
MRF21085LR3 MRF21085LSR3
Figure 13. Series Equivalent Source and Load Impedance
f
MHz
Zsource
*
Zload
*
2110
2140
2170
1.10 -- j3.71
1.12 -- j3.40
1.11 -- j3.57
1.23 -- j2.10
1.26 -- j1.92
1.25 -- j1.76
VDD =28V,I
DQ = 1000 mA, Pout =19WAvg.
Zo=5*
f = 2110 MHz
f = 2170 MHz
f = 2110 MHz
f = 2170 MHz
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Zsource
Zload
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MRF21085LR3 MRF21085LSR3
9
RF Device Data
Freescale Semiconductor
NOTES
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RF Device Data
Freescale Semiconductor
MRF21085LR3 MRF21085LSR3
NOTES
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11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465--06
ISSUE G
NI--780
MRF21085LR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.335 1.345 33.91 34.16
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
G1.100 BSC 27.94 BSC
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
N0.772 0.788 19.60 20.00
Q.118 .138 3.00 3.51
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
F
S0.365 0.375 9.27 9.52
M0.774 0.786 19.66 19.96
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
Q2X
M
A
M
bbb B M
T
M
A
M
bbb B M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
aaa B M
T
(INSULATOR)
R
M
A
M
ccc B M
T
(LID)
CASE 465A--06
ISSUE H
NI--780S
MRF21085LSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.805 0.815 20.45 20.70
B0.380 0.390 9.65 9.91
C0.125 0.170 3.18 4.32
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
M0.774 0.786 19.61 20.02
R0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
K
C
E
H
F
3
U
(FLANGE)
4X
Z
(LID)
4X
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.005 REF 0.127 REF
S0.365 0.375 9.27 9.52
N0.772 0.788 19.61 20.02
U-- -- -- 0 . 0 4 0 -- -- -- 1 . 0 2
Z-- -- -- 0 . 0 3 0 -- -- -- 0 . 7 6
M
A
M
bbb B M
T
B
B
(FLANGE)
2X
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
ccc B M
T
M
A
M
aaa B M
T
R(LID)
S(INSULATOR)
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RF Device Data
Freescale Semiconductor
MRF21085LR3 MRF21085LSR3
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
9Dec. 2010 !MRF21085 Rev. 9 data sheet archived. Data sheet split due to change in part life cycle. See MRF21085--1
Rev. 10 for MRF21085LR3 and MRF21085--2 Rev. 11 for MRF21085LSR3.
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13
RF Device Data
Freescale Semiconductor
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Document Number: MRF21085
Rev. 9, 5/2006
