BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 -- 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 28 65 17.5 32 -31[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 2000 mA: Average output power = 65 W Power gain = 17.5 dB Efficiency = 32 % ACPR = -32 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G20(S)-230PRN NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G20-230PRN (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 5 4 [1] source 2 sym117 BLF6G20S-230PRN (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 2 1 5 3 5 [1] source 3 4 4 2 sym117 [1] Connected to flange 3. Ordering information Table 3. Ordering information Type number Package BLF6G20-230PRN Name Description Version - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A earless flanged balanced LDMOST ceramic package; 4 leads SOT539B BLF6G20S-230PRN - BLF6G20-230PRN_20S-230PRN_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 -- 9 February 2010 (c) NXP B.V. 2010. All rights reserved. 2 of 13 BLF6G20(S)-230PRN NXP Semiconductors Power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage -0.5 +13 V Tstg storage temperature -65 +150 C Tcase case temperature - 150 C Tj junction temperature - 225 C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL(AV) = 65 W 0.38 K/W 6. Characteristics Table 6. Characteristics Tj = 25 C per section; unless otherwise specified. BLF6G20-230PRN_20S-230PRN_2 Product data sheet Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.8 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA 1.4 1.9 2.4 V IDSS drain leakage current VGS = 0 V VDS = 28 V - - 3 A VDS = 60 V - - 5 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 30 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 300 nA gfs forward transconductance VDS = 10 V; ID = 9 A - 12 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 6.3 A - 0.1 0.165 All information provided in this document is subject to legal disclaimers. Rev. 02 -- 9 February 2010 (c) NXP B.V. 2010. All rights reserved. 3 of 13 BLF6G20(S)-230PRN NXP Semiconductors Power LDMOS transistor 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 1802.5 MHz; f2 = 1807.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 2000 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 65 W 16.3 17.5 18.7 dB RLin input return loss PL(AV) = 65 W - -11 dB D drain efficiency PL(AV) = 65 W 29 32 - % ACPR adjacent channel power ratio PL(AV) = 65 W - -31 -27 dBc -6.5 Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 1872.5 MHz; f2 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 2000 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PARO Conditions output peak-to-average ratio PL(AV) = 125 W; at 0.01 % probability on CCDF Min Typ Max Unit 3.5 4.2 - dB 7.1 Ruggedness in class-AB operation The BLF6G20-230PRN and BLF6G20S-230PRN are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 2000 mA; PL = 230 W (CW); f = 1805 MHz. BLF6G20-230PRN_20S-230PRN_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 -- 9 February 2010 (c) NXP B.V. 2010. All rights reserved. 4 of 13 BLF6G20(S)-230PRN NXP Semiconductors Power LDMOS transistor 7.2 Graphs 7.2.1 One tone CW 001aal412 19 Gp Gp (dB) 60.00 D (%) 17 46.66 15 33.33 D 13 20.00 11 0 100 6.66 300 200 PL (W) VDS = 28 V; IDq = 2000 mA. Fig 1. BLF6G20-230PRN_20S-230PRN_2 Product data sheet One-tone CW power gain and drain efficiency as functions of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 -- 9 February 2010 (c) NXP B.V. 2010. All rights reserved. 5 of 13 BLF6G20(S)-230PRN NXP Semiconductors Power LDMOS transistor 7.2.2 2-carrier W-CDMA 001aal413 19 Gp Gp (dB) D (%) 17 001aal414 -20 40 APCR (dBc) 30 15 -40 (1) (2) -60 (3) (4) 20 D 13 10 11 -80 0 0 20 40 60 80 0 20 40 60 PL (W) VDS = 28 V; IDq = 2000 mA. 80 100 PL (W) VDS = 28 V; IDq = 2000 mA. (1) f = 5 MHz low (2) f = 5 MHz high (3) f = 10 MHz low (4) f = 10 MHz high Fig 2. 2-carrier W-CDMA power gain and drain efficiency as functions of load power; typical values Fig 3. 2-carrier W-CDMA adjacent channel power ratio as function of load power; typical values 001aal415 400 9 PAR PL(M) (W) PAR (dB) 300 7 PL(M) 200 5 100 3 0 0 20 40 60 80 1 100 PL (W) VDS = 28 V; IDq = 2000 mA. Fig 4. BLF6G20-230PRN_20S-230PRN_2 Product data sheet 2-carrier W-CDMA peak output power and output peak-to-average ratio as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 -- 9 February 2010 (c) NXP B.V. 2010. All rights reserved. 6 of 13 BLF6G20(S)-230PRN NXP Semiconductors Power LDMOS transistor 8. Test information 18 mm C11 C7 C2 R1 C9 C4 C1 C6 BLF6G20-230PRN INPUT REV2 R04350 NXP C5 C3 C10 R2 C8 BLF6G20LS-230PRN INPUT REV2 R04950 NXP 18 mm 001aal417 See Table 9 for list of components. The drawing is not to scale. Fig 5. Component layout Table 9. List of components See Figure 5 for component layout. BLF6G20-230PRN_20S-230PRN_2 Product data sheet Component Description Value Remarks C1, C2, C3 multilayer ceramic chip capacitor 24 pF ATC100A C4, C5 multilayer ceramic chip capacitor 4.7 F TDK C6 multilayer ceramic chip capacitor 33 pF ATC8008 C7, C8 multilayer ceramic chip capacitor 12 pF ATC100B C9, C10 multilayer ceramic chip capacitor 10 F TDK C11 electrolytic capacitor 220 F/63 V R1, R2 SMD resistor 10 All information provided in this document is subject to legal disclaimers. Rev. 02 -- 9 February 2010 Philips 1206 (c) NXP B.V. 2010. All rights reserved. 7 of 13 BLF6G20(S)-230PRN NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 00-03-03 10-02-02 SOT539A Fig 6. EUROPEAN PROJECTION Package outline SOT539A BLF6G20-230PRN_20S-230PRN_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 -- 9 February 2010 (c) NXP B.V. 2010. All rights reserved. 8 of 13 BLF6G20(S)-230PRN NXP Semiconductors Power LDMOS transistor Earless flanged balanced LDMOST ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) mm mm w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 0.54 nom 0.01 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 max nom min A E E1 4.7 11.81 0.18 31.55 31.52 b c D D1 9.5 9.53 4.2 11.56 0.10 30.94 30.96 9.3 9.27 e F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.77 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA Issue date 09-10-16 10-02-02 SOT539B Fig 7. sot539b_po European projection Package outline SOT539B BLF6G20-230PRN_20S-230PRN_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 -- 9 February 2010 (c) NXP B.V. 2010. All rights reserved. 9 of 13 BLF6G20(S)-230PRN NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function DPCH Dedicated Physical CHannel LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G20-230PRN_20S-230PRN_2 20100209 Product data sheet - BLF6G20-230PRN_1 Modifications BLF6G20-230PRN_1 BLF6G20-230PRN_20S-230PRN_2 Product data sheet * * * Data sheet status changed to productive data sheet. Data sheet expanded to include the BLF6G20S-230PRN transistor. Section 12 "Legal information" export control disclaimer added. 20081202 Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 -- 9 February 2010 - (c) NXP B.V. 2010. All rights reserved. 10 of 13 BLF6G20(S)-230PRN NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or BLF6G20-230PRN_20S-230PRN_2 Product data sheet malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. All information provided in this document is subject to legal disclaimers. Rev. 02 -- 9 February 2010 (c) NXP B.V. 2010. All rights reserved. 11 of 13 BLF6G20(S)-230PRN NXP Semiconductors Power LDMOS transistor In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G20-230PRN_20S-230PRN_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 -- 9 February 2010 (c) NXP B.V. 2010. All rights reserved. 12 of 13 NXP Semiconductors BLF6G20(S)-230PRN Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 One tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 February 2010 Document identifier: BLF6G20-230PRN_20S-230PRN_2