1. Product profile
1.1 General description
230 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing5MHz.
1.2 Features and benefits
Typical 2-carrier W - CDMA perfor mance at freq uencies of 1805 MHz and 1880 MHz, a
supply voltage of 28 V and an IDq of 2000 mA:
Average output power = 65 W
Power gain = 17.5 dB
Efficiency = 32 %
ACPR = −32 dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, rega rd in g Re str ictio n of Haza rd ous Sub s tances
(RoHS)
BLF6G20-230PRN;
BLF6G20S-230PRN
Power LDMOS transistor
Rev. 02 — 9 February 2010 Product data sheet
Table 1. Typical perform a nce
RF performance at Tcase = 25
°
C in a common source class-AB production test circuit.
Mode of operation f VDS PL(AV) GpηDACPR
(MHz) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 1805 to 1880 28 65 17.5 32 −31[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLF6G20-230PRN_20S-230PRN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 February 2010 2 of 13
NXP Semiconductors BLF6G20(S)-230PRN
Power LDMOS transistor
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range
2. Pinning information
[1] Connected to flange
3. Ordering information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF6G20-230PRN (SOT539A)
1drain1
2drain2
3gate1
4gate2
5source [1]
BLF6G20S-230PRN (SOT539B)
1drain1
2drain2
3gate1
4gate2
5source [1]
5
12
43
4
3
5
1
2
sym11
7
5
12
43 4
3
5
1
2
sym11
7
Table 3. Ordering information
Type number Package
Name Description Version
BLF6G20-230PRN - flanged balanced LDMOST cera mic package;
2 mounting holes; 4 leads SOT539A
BLF6G20S-230PRN - earless flanged balanced LDMOST ceramic package;
4 leads SOT539B
BLF6G20-230PRN_20S-230PRN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 February 2010 3 of 13
NXP Semiconductors BLF6G20(S)-230PRN
Power LDMOS transistor
4. Limiting values
5. Thermal characteristics
6. Characteristics
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
Tstg storage temperature −65 +150 °C
Tcase case temperature - 150 °C
Tjjunction temperature - 225 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-case) thermal resistance from junction
to case Tcase =80°C;
PL(AV) =65 W 0.38 K/W
Table 6. Characteristics
Tj = 25
°
C per section; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D=1.8mA65--V
VGS(th) gate-source threshold voltage VDS =10 V; I
D= 180 mA 1.4 1.9 2.4 V
IDSS drain leakage current VGS =0V
VDS =28V --3μA
VDS =60V --5μA
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V -30-A
IGSS gate leakage current VGS =11 V; V
DS = 0 V - - 300 nA
gfs forward transcondu ctance VDS =10V; I
D=9A - 12 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 3.75 V;
ID=6.3A -0.10.165Ω
BLF6G20-230PRN_20S-230PRN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 February 2010 4 of 13
NXP Semiconductors BLF6G20(S)-230PRN
Power LDMOS transistor
7. Application information
7.1 Ruggedness in class-AB operation
The BLF6G20-230PRN and BLF6G20S-230PRN are capable of withstanding a load
mismatch corr es po nd in g to VSWR = 10 : 1 through all phas es under the following
conditions: VDS =28V; I
Dq = 2000 mA; PL = 230 W (CW); f = 1805 MHz.
Table 7. Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f1 = 1802.5 MHz; f2 = 1807.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz;
RF performance at VDS = 28 V; IDq = 2000 mA; Tcase = 25
°
C; unless otherwise specified; in a
class-AB production test circuit
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 65 W 16.3 17.5 18.7 dB
RLin input return loss PL(AV) = 65 W - −11 −6.5 dB
ηDdrain efficiency PL(AV) = 65 W 29 32 - %
ACPR adjacent channel power ratio PL(AV) = 65 W - −31 −27 dBc
Table 8. Application information
Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f1 = 1872.5 MHz; f2 = 1877.5 MHz; RF performance at VDS = 28 V;
IDq = 2000 mA; Tcase = 25
°
C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PAROoutput peak-to-average ratio PL(AV) =125W;
at 0.01 % probability on CCDF 3.5 4.2 - dB
BLF6G20-230PRN_20S-230PRN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 February 2010 5 of 13
NXP Semiconductors BLF6G20(S)-230PRN
Power LDMOS transistor
7.2 Graphs
7.2.1 One tone CW
VDS =28V; I
Dq = 2000 mA.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical
values
001aal412
PL (W)
0 300200100
15
13
17
19
Gp
(dB)
11
33.33
20.00
46.66
60.00
ηD
(%)
6.66
Gp
ηD
BLF6G20-230PRN_20S-230PRN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 February 2010 6 of 13
NXP Semiconductors BLF6G20(S)-230PRN
Power LDMOS transistor
7.2.2 2-carrier W-CDMA
VDS =28V; I
Dq = 2000 mA. VDS =28V; I
Dq = 2000 mA.
(1) f = 5 MHz low
(2) f = 5 MHz high
(3) f = 10 MHz low
(4) f = 10 MHz high
Fig 2. 2-carrier W-CDMA power gain and drain
efficiency as functions of load power; typical
values
Fig 3. 2-c arrier W-CDMA adjacent channel power
ratio as function of load power; typical values
PL (W)
0806020 40
001aal413
15
13
17
19
Gp
(dB)
11
20
10
30
40
ηD
(%)
0
Gp
ηD
PL (W)
0 1008040 6020
001aal414
−60
−40
−20
APCR
(dBc)
−80
(1) (2)
(3) (4)
VDS =28V; I
Dq = 2000 mA.
Fig 4. 2-carrier W-CDMA peak output power and output peak-to -average ratio as
function of load power; typical values
PL (W)
0 1008040 6020
001aal415
200
100
300
400
PL(M)
(W)
0
5
3
7
9
PA R
(dB)
1
PL(M)
PA R
BLF6G20-230PRN_20S-230PRN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 February 2010 7 of 13
NXP Semiconductors BLF6G20(S)-230PRN
Power LDMOS transistor
8. Test information
See Table 9 for list of components. The drawing is not to scale.
Fig 5. Component layout
001aal41
7
BLF6G20LS-230PRN
INPUT REV2 R04950
NXP
BLF6G20-230PRN
INPUT REV2 R04350
NXP
C3
C2
C1
C5
C4
R2
R1
18 mm
18 mm
C10
C9
C6
C8
C7
C11
Table 9. List of components
See Figure 5 for component layout.
Component Description Value Remarks
C1, C2, C3 multilayer ceramic chip capacito r 24 pF ATC100A
C4, C5 multilayer ceramic chip capacitor 4.7 μFTDK
C6 multilayer ceramic chip capacitor 33 pF ATC8008
C7, C8 multilayer ceramic chip capacitor 12 pF ATC100B
C9, C10 multilayer ceramic chip capacitor 10 μFTDK
C11 electrolytic capacitor 220 μF/63 V
R1, R2 SMD resistor 10 ΩPhilips 1206
BLF6G20-230PRN_20S-230PRN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 February 2010 8 of 13
NXP Semiconductors BLF6G20(S)-230PRN
Power LDMOS transistor
9. Package outline
Fig 6. Package outline SOT539A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT539A 10-02-02
00-03-03
0 5 10 mm
scale
p
A
F
b
e
D
U2
L
H
Q
c
5
12
43
D1
E
A
w1AB
M M M
q
U1
H1
C
B
M M
w2C
E1
M
w3
UNIT A
mm
Db
11.81
11.56
0.18
0.10
31.55
30.94 13.72 9.53
9.27
17.12
16.10
10.29
10.03
4.7
4.2
ce U2
0.250.25 0.51
w3
35.56
qw
2
w1
F
1.75
1.50
U1
41.28
41.02
H1
25.53
25.27
p
3.30
3.05
Q
2.26
2.01
EE
1
9.50
9.30
inches 0.465
0.455
0.007
0.004
1.242
1.218
D1
31.52
30.96
1.241
1.219 0.540 0.375
0.365
0.674
0.634
0.405
0.395
0.185
0.165 0.0100.010 0.0201.400
0.069
0.059
1.625
1.615
1.005
0.995
0.130
0.120
0.089
0.079
0.374
0.366
H
3.48
2.97
0.137
0.117
L
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
F
langed balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539
A
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
BLF6G20-230PRN_20S-230PRN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 February 2010 9 of 13
NXP Semiconductors BLF6G20(S)-230PRN
Power LDMOS transistor
Fig 7. Package outline SOT539B
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT539B
sot539b_po
09-10-16
10-02-02
Unit(1)
mm
max
nom
min
4.7
4.2
11.81
11.56
31.55
30.94
31.52
30.96
9.5
9.3
9.53
9.27
1.75
1.50
17.12
16.10
3.48
2.97
10.29
10.03
0.25
A
Dimensions
E
arless flanged balanced LDMOST ceramic package; 4 leads SOT539
B
bc
0.18
0.10
DD
1EE
1e
13.72
FHH
1
25.53
25.27
LQ
2.26
2.01
U1
32.77
32.13
U2w2
0.25
mm
max
nom
min
0.185
0.165
0.465
0.455
1.242
1.218
1.241
1.219
0.374
0.366
0.375
0.365
0.069
0.059
0.674
0.634
0.137
0.117
0.405
0.395
0.01
0.007
0.004
0.54
1.005
0.995
0.089
0.079
1.275
1.265
0.01
w3
0 5 10 mm
scale
c
E
Q
E1
e
H
L
b
H1
U1
U2
Dw2
w3
1 2
3 4
D
D
A
F
D1
5
Note
1. millimeter dimensions are derived from the original inch dimensions.
BLF6G20-230PRN_20S-230PRN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 February 2010 10 of 13
NXP Semiconductors BLF6G20(S)-230PRN
Power LDMOS transistor
10. Abbreviations
11. Revision history
Table 10. Abbreviations
Acronym Description
3GPP Third Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
DPCH Dedicated Physical CHannel
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
PAR Peak-to-Average power Ratio
PDPCH transmission Power of the Dedicated Physical CHannel
RF Radio Frequency
W-CDMA Wideband Code Division Multiple Access
Table 11. Revision history
Document ID Release
date Data sheet status Change notice Supersedes
BLF6G20-230PRN_20S-230PRN_2 20100209 Product data sheet - BLF6G20-230PRN_1
Modifications •Data sheet status changed to productive data sheet.
•Data sheet expanded to include the BLF6G20S-230PRN transistor.
•Section 12 “Legal information” export control discla imer adde d.
BLF6G20-230PRN_1 20081202 Objective data sheet - -
BLF6G20-230PRN_20S-230PRN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 February 2010 11 of 13
NXP Semiconductors BLF6G20(S)-230PRN
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specificatio n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indire ct, incidental,
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Notwithstanding any damages that customer might incur for any reason
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customer for the products described herein shall be limited in accordance
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Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descripti ons, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
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Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
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malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or en vironmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or application s and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liabil i ty related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application /use or t he application/use of customer’s third party
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suitable and fit for the Appl ica tion plann ed. Customer has to do all necessary
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress rating s only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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agreement is concluded only the ter m s and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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Export control — This document as well as the item(s) described herein
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Quick reference data — The Quick reference data is an extract of the
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Semiconductors product expressly states that t he product is automotive
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NXP Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualifie d products in automotive equipment or applica tions.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product development .
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BLF6G20-230PRN_20S-230PRN_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 February 2010 12 of 13
NXP Semiconductors BLF6G20(S)-230PRN
Power LDMOS transistor
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standards, custome r
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such au tomotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for an y
liability, damages or failed product claims resulting f rom customer design an d
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLF6G20(S)-230PRN
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 February 2010
Document identifier: BLF6G20-230PRN_20S-230P RN_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 4
7.1 Ruggedness in class-AB operation . . . . . . . . . 4
7.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.2.1 One tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.2.2 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
