1.9
2. 80¡ À0. 05
1. 60¡ À0. 05
0.35
2.92¡À0.05
0.95¡À0.0251.02
RB425D Schottky barrier Diodes
FEATURES
z Small surface mounting type
z Low reverse current and low forward voltage
z High reliability
Marking: D3L
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter Symbol Limits Unit
Peak reverse voltage VRM 40 V
DC reverse voltage VR 40 V
Mean rectifying current IO 100 mA
Peak forward surge current IFSM 1 A
Junc ti on temperatur e Tj 125 ℃
Storage temperature Tstg -40~+125 ℃
Electrical Ratings @TA=25℃
Parameter Symbol Min. Typ. Max. Unit Conditions
VF1 0.55 V IF=100mA
Forward voltage VF2 0.34 V IF=10mA
Reverse current IR 30
µA VR=10V
Capacitance between terminals CT 6 pF VR=10V, f=1MHZ
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+
+
SOT-23-3L
