61
2
3
1.05
+0.2
-0.1
BE
5.45±0.1 5.45±0.1
2-ø3.2±0.1
36.4±0.3
9
24.4±0.2
7
21.4±0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0±0.2
2.1
a
b
C
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
160
160
5
15
4
150(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
External Dimensions MT-200
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Ratings
100max
100max
160min
50min∗
2.0max
60typ
200typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
VCB=160V
VEB=5V
IC=25mA
VCE=4V, IC=5A
IC=5A, IB=0.5A
VCE=12V, IE=–2A
VCB=10V, f=1MHz
VCC
(V)
60
RL
(Ω)
12
IC
(A)
5
VB2
(V)
–5
IB2
(mA)
–500
ton
(
µ
s)
0.2typ
tstg
(
µ
s)
1.5typ
tf
(
µ
s)
0.35typ
IB1
(mA)
500
LAPT 2SC2921
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a–t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
0
3
2
1
0 0.2 0.4 0.6 1.00.8
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=10A
5A
0
15
10
5
021
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C
–30˚C (Case Temp)
1 10 100 1000 2000
Time t(ms)
0.1
1
2
0.5
Transient Thermal Resistance θj-a(˚C/W)
160
120
80
40
5
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
2 10 100 200
0.3
1
0.5
10
40
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
DC
10ms
Without Heatsink
Natural Cooling
0.02 0.1 10.5 10 15
10
50
100
200
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
Typ
0
0
15
10
5
2134
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
400mA
500mA
600mA
300mA
200mA
150mA
100mA
50mA
I
B
=20mA
750mA
(VCE=4V)
0.02 0.5 51
20
50
200
100
0.1 10 15
Collector Current IC(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
–0.02 –0.1 –1 –10
0
20
40
60
80
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
Typ
Weight : Approx 18.4g
a. Part No.
b. Lot No.
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
