Fast Recovery Epitaxial Diode (FRED) Module PSMD 75E IFAV VRRM = 75 A = 800-1200 V Preliminary Data Sheet VRSM V 800 1000 1200 VRRM V 800 1000 1200 Type PSMD 75E/08 PSMD 75E/10 PSMD 75E/12 Symbol Test Conditions IFAV IFSM TC = 85C TVJ = 45C VR = 0 i2 dt TVJ TVJM Tstg VISOL Maximum Ratings t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 75 1000 1100 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 900 990 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 5020 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 4050 4060 A2 s A2 s -40 ... + 150 150 -40 ... + 125 C C C 2500 3000 V V 5 5 160 Nm Nm g 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s Applications * Inductive heating and melting * Free wheeling diode in converters and motor control circuits * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * High reliability circuit operation * Low voltage peaks for reduced Weight Mounting torque Terminal connection torque typ. Symbol Test Conditions Characteristic Value Package, style and outline IR VR = VRRM TVJ = 25C VR = VRRM TVJ = TVJM IF = 75 A TVJ = 25C TVJ = 25C, IF = 1A; -di/dt = 100 A/s; VR = 30V For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration Dimensions in mm (1mm = 0.0394") Md VF trr VTO rT RthJC RthJK dS dA a POWERSEM GmbH, Walpersdorfer Str. 56 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 (M5) (M5) Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Short recovery time * Low forward voltage drop * Short recovery behaviour * UL registered, E 148688 250 2.5 2.0 typ. 100 A mA V ns 0.7 1.55 0.85 0.43 1.0 0.5 10 9.4 50 V m K/W K/W K/W K/W mm mm m/s2 protection circuits * Low noise switching * Low losses 2003 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/