This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC4562G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1748G Package Features * Code SMini3-F2 * Marking Symbol: AM * Pin Name 1: Base 2: Emitter 3: Collector d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. * High transition frequency fT * Small collector output capacitance (Common base, input open circuited) Cob * S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Parameter Symbol Collector-base voltage (Emitter open) ue Electrical Characteristics Ta = 25C 3C tin VCBO Conditions Min IC = 10 A, IE = 0 50 Typ Max Unit V VCEO IC = 1 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 A, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1 A Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 A hFE VCE = 10 V, IC = 2 mA 500 VCE(sat) IC = 10 mA, IB = 1 mA 0.06 0.30 V VCB = 10 V, IE = -2 mA, f = 200 MHz 250 MHz VCB = 10 V, IE = 0, f = 1 MHz 1.5 pF nc e/ Di sc on Collector-emitter voltage (Base open) te na Forward current transfer ratio * Collector-emitter saturation voltage fT M ain Transition frequency Cob Pl Collector output capacitance (Common base, input open circuited) 200 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE 200 to 400 250 to 500 Publication date: May 2007 SJC00366AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4562G PC Ta IC VCE IC VBE 120 60 Ta = 25C 100 120 50 IB = 300 A 80 250 A Collector current IC (mA) Collector current IC (mA) 160 VCE = 10 V 25C 40 Ta = 75C M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (mW) 200 80 40 200 A 150 A 40 100 A 20 -25C 20 10 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 40 80 120 0 160 Forward current transfer ratio hFE 1 Ta = 75C -25C 0.01 1 10 6 8 600 10 25C 4 100 500 Ta = 75C 400 25C -25C 300 200 100 ue 1 10 Collector current IC (mA) tin on Di sc nc e/ IE = 0 f = 1 MHz Ta = 25C te na 5 4 M ain 3 Pl Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 2 1 0 1 0 12 0 10 100 Collector-base voltage VCB (V) SJC00366AED 100 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) fT I E 600 VCE = 10 V 0 0.1 1 000 Collector current IC (mA) 6 10 hFE IC IC / IB = 10 0.1 2 Collector-emitter voltage VCE (V) VCE(sat) IC 100 0 Transition frequency fT (MHz) 0 Ambient temperature Ta (C) 2 30 50 A 0 Collector-emitter saturation voltage VCE(sat) (V) 60 VCB = 10 V Ta = 25C 500 400 300 200 100 0 - 0.1 -1 -10 Emitter current IE (mA) -100 1.25 0.10 1 (0.65) 0.050 +0.05 3 2 (0.65) 0.13 -0.02 +0.05 1.30 0.10 0 to 0.10 0.10 0.10 pla in ea 0.90 2.10 ne clu se d pla m d m es f ht visi n a a o tp t f e :// ol d d d inte inte llow ww lo is is na n i(5) w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P 0.425 ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy n s cle i (0.49) c.c t in o. for sta jp/ m ge en at . / ion . ed inu 0.30 -0.02 (0.89) on t (5) Di sc ce / en an 2.00 0.20 Pl ain t M M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 Unit: mm Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. pla d in ea ne clu se pla m d de v ht isi ne ai ma s fo tp t f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl M ain te na nc e /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.