5SNA1200E2501 - ABB Semiconductors

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

VCE = 2500

V

IC = 1200

A

Doc. No. 5SYA 1557

-

02 July 04

• Low-loss, rugged SPT chip-set

• Smooth switching SPT chip-set for

good EMC

• Industry standard package

• High power density

• AlSiC base-plate for high power

cycling capability

• AlN substrate for low thermal

resistance

Maximum rated values 1)

Parameter Symbol Conditions min max

Unit

Collector-emitter voltage VCES VGE = 0 V 2500

V

DC collector current IC Tc = 80 °C 1200

A

Peak collector current ICM tp = 1 ms, Tc = 80 °C 2400

A

Gate-emitter voltage VGES -20 20 V

Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) 11000

W

DC forward current IF 1200

A

Peak forward current IFRM 2400

A

Surge current IFSM VR = 0 V, Tvj = 125 °C,

tp = 10 ms, half-sinewave 11000

A

IGBT short circuit SOA tpsc VCC = 1900 V, VCEM CHIP ≤ 2500 V

VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs

Isolation voltage Visol 1 min, f = 50 Hz 5000

V

Junction temperature Tvj 150 °C

Junction operating temperature Tvj(op) -40 125 °C

Case temperature Tc -40 125 °C

Storage temperature Tstg -40 125 °C

M1 Base-heatsink, M6 screws 4 6

M2 Main terminals, M8 screws 8 10

Mounting torques 2) M3 Auxiliary terminals, M4 screws 2 3 Nm

1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747

2) For detailed mounting instructions refer to ABB Document No. 5SYA2039

ABB HiPak

TM

IGBT Module

5SNA 1200E250100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1557-02 July 04 page 2 of 9

IGBT characteristic values 3)

Parameter Symbol Conditions min typ max

Unit

Collector (-emitter)

breakdown voltage V(BR)CES V

GE = 0 V, IC = 10 mA, Tvj = 25 °C 2500

V

Tvj = 25 °C 2.2 2.5 2.9 V

Collector-emitter 4)

saturation voltage VCE sat IC = 1200 A, VGE = 15 V Tvj = 125 °C 2.8 3.1 3.4 V

Tvj = 25 °C 12 mA

Collector cut-off current ICES VCE = 2500 V, VGE = 0 V Tvj = 125 °C 60 120 mA

Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500

500 nA

Gate-emitter threshold voltage VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 °C 5 7.5 V

Gate charge Qge IC = 1200 A, VCE = 1250 V,

VGE = -15 V .. 15 V 12.2 µC

Input capacitance Cies 186

Output capacitance Coes 13.7

Reverse transfer capacitance Cres

VCE = 25 V, VGE = 0 V, f = 1 MHz,

Tvj = 25 °C 2.98 nF

Tvj = 25 °C 375

Turn-on delay time td(on) Tvj = 125 °C 365 ns

Tvj = 25 °C 240

Rise time tr

VCC = 1250 V,

IC = 1200 A,

RG = 1.5 Ω,

VGE = ±15 V,

Lσ = 100 nH, inductive load

Tvj = 125 °C 250 ns

Tvj = 25 °C 875

Turn-off delay time td(off) Tvj = 125 °C 980 ns

Tvj = 25 °C 300

Fall time tf

VCC = 1250 V,

IC = 1200 A,

RG = 1.5 Ω,

VGE = ±15 V,

Lσ = 100 nH, inductive load

Tvj = 125 °C 345 ns

Tvj = 25 °C 820

Turn-on switching energy Eon VCC = 1250 V, IC = 1200 A,

VGE = ±15 V, RG = 1.5 Ω,

Lσ = 100 nH, inductive load

Tvj = 125 °C 1150

mJ

Tvj = 25 °C 980

Turn-off switching energy Eoff VCC = 1250 V, IC = 1200 A,

VGE = ±15 V, RG = 1.5 Ω,

Lσ = 100 nH, inductive load

Tvj = 125 °C 1250

mJ

Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,

VCC = 1900 V, VCEM CHIP ≤ 2500 V 5800

A

Module stray inductance Lσ CE 10 nH

TC = 25 °C 0.06

Resistance, terminal-chip RCC’+EE’ T

C

= 125 °C 0.085

mΩ

3) Characteristic values according to IEC 60747 – 9

4) Collector-emitter saturation voltage is given at chip level

5SNA 1200E250100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1557-02 July 04 page 3 of 9

Diode characteristic values 5)

Parameter Symbol Conditions min typ max

Unit

Tvj = 25 °C 1.5 1.75 2.0

Forward voltage 6) VF IF = 1200 A Tvj = 125 °C 1.4 1.8 2.0 V

Tvj = 25 °C 965

Reverse recovery current Irr Tvj = 125 °C 1180

A

Tvj = 25 °C 680

Recovered charge Qrr Tvj = 125 °C 1150

µC

Tvj = 25 °C 1250

Reverse recovery time trr Tvj = 125 °C 1710

ns

Tvj = 25 °C 580

Reverse recovery energy Erec

VCC = 1250 V,

IF = 1200 A,

VGE = ±15 V,

RG = 1.5 Ω

Lσ = 100 nH

inductive load

Tvj = 125 °C 960 mJ

5) Characteristic values according to IEC 60747 – 2

6) Forward voltage is given at chip level

Thermal properties

Parameter Symbol Conditions min typ max

Unit

IGBT thermal resistance

junction to case Rth(j-c)IGBT 0.009

K/W

Diode thermal resistance

junction to case Rth(j-c)DIODE

0.017

K/W

Thermal resistance case 2)

to heatsink Rth(c-h) per module, λ grease = 1W/m x K 0.006

K/W

2) For detailed mounting instructions refer to ABB Document No. 5SYA2039

Mechanical properties

Parameter Symbol Conditions min typ max

Unit

Dimensions L x W x H

Typical , see outline drawing 190 x 140 x 38 mm

Term. to base:

23

Clearance distance DC according to IEC 60664-1

and EN 50124-1 Term. to term:

19 mm

Term. to base:

33

Surface creepage distance DSC according to IEC 60664-1

and EN 50124-1 Term. to term:

32 mm

Weight 1500

g

5SNA 1200E250100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1557-02 July 04 page 4 of 9

Electrical configuration

Outline drawing 2)

Note: all dimensions are shown in mm

2) For detailed mounting instructions refer to ABB Document No. 5SYA2039

This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.

This product has been designed and qualified for Industrial Level.

5SNA 1200E250100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1557-02 July 04 page 5 of 9

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

0 1 2 3 4 5

VCE [V]

IC [A]

VGE = 15 V

25 °C

125 °C

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

012345678910111213

VGE [V]

IC [A]

25 °C

125 °C

Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

0123456

VCE [V]

IC [A]

Tvj = 25°C

17 V

9 V

11 V

15 V

13 V

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

0123456

VCE [V]

IC [A]

Tvj = 125 °C

15 V

9 V

11 V

13 V

17 V

Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level

5SNA 1200E250100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1557-02 July 04 page 6 of 9

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0500 1000 1500 2000 2500

IC [A]

Eon, Eoff [J]

Eon

Eoff

V

CC = 1250 V

RG = 1.5 ohm

V

GE = ±15 V

Tvj = 125 °C

Lσ = 100 nH

Esw[mJ] = 325 x 10-6 x IC2 + 1.31 x IC +347

0

1

2

3

4

5

6

0 5 10 15

RG [ohm]

Eon, Eoff [J]

Eon

Eoff

V

CC = 1250 V

IC = 1200 A

V

GE = ±15 V

Tvj = 125 °C

Lσ = 100 nH

Fig. 5 Typical switching energies per pulse

vs collector current Fig. 6 Typical switching energies per pulse

vs gate resistor

0.01

0.1

1

10

0500 1000 1500 2000 2500

IC [A]

td(on), tr, td(off), tf [µs]

V

CC = 1250 V

RG = 1.5 ohm

V

GE = ±15 V

Tvj = 125 °C

Lσ = 100 nH

td(on)

td(off)

tf

tr

0.1

1

10

0 5 10 15 20

RG [ohm]

td(on), tr, td(off), tf

td(on)

td(off)

tr

tf

VCC = 1250 V

IC = 1200 A

VGE = ±15 V

Tvj = 125 °C

Lσ = 100 nH

Fig. 7 Typical switching times

vs collector current Fig. 8 Typical switching times

vs gate resistor

5SNA 1200E250100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1557-02 July 04 page 7 of 9

1

10

100

1000

0 5 10 15 20 25 30 35

VCE [V]

C [nF]

Cies

Coes

Cres

V

GE = 0 V

fOSC = 1 MHz

V

OSC = 50 mV

0

5

10

15

20

0246810 12

Qg [µC]

VGE [V]

V

CC

= 1250 V

V

CC = 1800 V

IC = 1200 A

Tvj = 25 °C

Fig. 9 Typical capacitances

vs collector-emitter voltage Fig. 10 Typical gate charge characteristics

0

0.5

1

1.5

2

2.5

0500 1000 1500 2000 2500 3000

VCE [V]

ICpulse / IC

Chip

Module

V

CC ≤ 1900 V, Tvj = 125 °C

V

GE = ±15 V, RG = 1.5 ohm

Fig. 11 Turn-off safe operating area (RBSOA)

5SNA 1200E250100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1557-02 July 04 page 8 of 9

0

200

400

600

800

1000

1200

1400

1600

0 500 1000 1500 2000 2500

IF [A]

Erec [mJ], Irr [A], Qrr [µC]

Qrr

Erec

Irr

V

CC = 1250 V

R

G = 1.5 ohm

V

GE = ±15 V

T

vj = 125 °C

L

σ = 100 nH

Erec[mJ] = -1.86 x 10-4 x IF2 + 0.903 x IF + 181

0

200

400

600

800

1000

1200

0 1 2 3 4 5 6

di/dt [kA/µs]

Erec [mJ]

0

300

600

900

1200

1500

1800

Irr [A], Qrr [µQ]

R

G

= 1.0 ohm

R

G

= 1.5 ohm

R

G

= 3.9 ohm

R

G

= 6.8 ohm

R

G

= 15 ohm

Erec

Qrr

Irr

V

CC = 1250 V

IF = 1200 A

Tvj = 125 °C

Lσ = 100 nH

R

G

= 2.7 ohm

Fig. 12 Typical reverse recovery characteristics

vs forward current Fig. 13 Typical reverse recovery characteristics

vs di/dt

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

00.5 1 1.5 2 2.5

VF [V]

IF [A]

25 °C

125 °C

0

400

800

1200

1600

2000

2400

2800

0500 1000 1500 2000 2500 3000

VR [V]

IR [A]

V

CC ≤ 1900 V

di/dt ≤ 8000 A/µs

Tvj = 125 °C

Fig. 14 Typical diode forward characteristics,

chip level Fig. 15 Safe operating area diode (SOA)

5SNA 1200E250100

ABB Sw

itzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA 1557-02 July 04

Semiconductors

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306

Email abbsem@ch.abb.com

Internet www.abb.com/semiconductors

Analytical function for transient thermal

impedance:

)e-(1R = (t)Z n

1i

t/-

ic)-(jth ∑

=

i

τ

i 1 2 3 4 5

Ri(K/kW) 6.287 1.685 0.685 0.337

IGBT

τi(ms) 194.7 20.4 1.98 0.52

Ri(K/kW) 11.54 2.92 1.28 1.27

DIODE

τi(ms) 203.4 29.3 6.96 1.5

0.0001

0.001

0.01

0.1

0.001 0.01 0.1 1 10

t [s]

Zth(j-h)

[K/W] IGBT, DIODE

Zth(j-c) IGBT

Zth(j-c) Diode

Fig. 16 Thermal impedance vs time