Data Sheet No. PD60277
Features
• Floating channel designed for bootstrap operation
to +600 V
• Tolerant to negative transient voltage, dV/dt
immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout for both channels
• 3.3 V, 5 V, and 15 V input logic input compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• Lower di/dt gate driver for better noise immunity
• Internal 100 ns deadtime
• Output in phase with input
HALF-BRIDGE DRIVER
Product Summary
VOFFSET 600 V max.
IO+/- (min) 60 mA/130 mA
VOUT 10 V - 20 V
Delay Matching 50 ns
Internal deadtime 100 ns
ton/off (typ.) 150 ns/150 ns
IRS2304(S)PbF
www.irf.com 1
LIN
HIN
VCC
COM
VB
HO
VS
LO
Vcc
LIN
HIN
up to 600 V
TO
LOAD
Block Diagram
Package
8 Lead
SOIC
8-Lead
PDIP
Description
The IRS2304 is a high voltage, high speed power
MOSFET and IGBT driver with independent high-side
and low-side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction.
The logic input is compatible with
standard CMOS or LSTTL output,
down to 3.3 V logic. The output driver
features a high pulse current buffer
stage designed for minimum driver
cross-conduction. The floating chan-
nel can be used to drive an N-chan-
nel power MOSFET or IGBT in the
high-side configuration which oper-
ates up to 600 V.
Part Input
logic
Cross-
conduction
prevention
logic
Deadtime
(ns) Ground Pins ton/toff
(ns)
2106/2301 COM
21064 HIN/LIN no none VSS/COM 220/200
2108 Internal 540 COM
21084 HIN/LIN yes Programmable 540 - 5000 VSS/COM 220/200
2109/2302 Internal 540 COM
21094 IN/SD yes Programmable 540 - 5000 VSS/COM 750/200
Feature Comparison
2304 HIN/LIN yes Internal 100 COM 160/140
(Refer to Lead Assignments for cor-
rect pin configuration). These dia-
grams show electrical connections
only. Please refer to our Application
Notes and DesignTips for proper cir-
cuit board layout.
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• RoHS compliant