BPX 81
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Lead (Pb) Free Product - RoHS Compliant
2007-03-30 1
Wesentliche Merkmale
• Speziell geeignet für Anwendunge n im Bereich
von 450 nm bis 1100 nm
• Hohe Linearität
• Einstellige Zeilenbauform aus klarem Epoxy
• Gruppiert lieferbar
Anwendungen
• Computer-Blitzlichtgeräte
• Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code Fotostrom , Ee= 0.5 mW/cm2, λ = 950 nm, VCE = 5 V
Photocurrent
IPCE (mA)
BPX 81 Q62702P0020 > 0.25
BPX 81-2/3 Q62702P3583 0.25…0.80
BPX 81-3 Q62702P0043S0003 0.40…0.80
BPX 81-3/4 Q62702P3584 > 0.40
BPX 81-4 Q62702P0043S0004 > 0.63
Features
• Especially suitable for applications from
450 nm to 1100 nm
• High linearity
• One-digit array package of transparent epoxy
• Available in groups
Applications
• Computer-controlled flashes
• Miniature photointerrupters
• Industrial electronics
• For control and drive circuits
2007-03-30 2
BPX 81
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 … + 80 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 35 V
Kollektorstrom
Collector cu rr ent IC50 mA
Kollektorspitzenstrom, τ < 10 μs
Collector surge current ICS 200 mA
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 90 mW
Wärmewiderstand
Thermal resistance RthJA 750 K/W
BPX 81
2007-03-30 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 850 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sens itivity
S = 10% of Smax
λ450 … 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A0.11 mm2
Abmessung der Chipfläche
Dimensions of chip area L × B
L × W0.5 × 0.5 mm × mm
Halbwinkel
Half angle ϕ ± 18 Grad
deg.
Kapazität
Capacitance
VCE = 0 V, f = 1 MHz, E = 0
CCE 7.5 pF
Dunkelstrom
Dark current
VCE = 20 V, E = 0
ICEO 1 (≤ 50) nA
2007-03-30 4
BPX 81
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
-2 -3 -4
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V
Ev = 1000 Ix, Normlicht/standard light A,
VCE = 5 V
IPCE
IPCE
0.25…0.50
1.2
0.40…0.80
1.9
≥ 0.63
2.9
mA
mA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf5.5 6 8 μs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin1) × 0.3
Ee = 0.5 mW/cm2
VCEsat 150 150 150 mV
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
1) IPCEmin is the min. photocurrent of th e specified group.
BPX 81
2007-03-30 5
Relative Spectral Sensitivity
Srel = f (λ)
Photocurrent
IPCE/IPCE25o = f (TA), VCE = 5 V
Directional Characteristics
Srel = f (ϕ)
0
10
20
30
40
50
60
70
80
90
100
400 500 600 700 800 900 1000 1100
lambda
Srel
%
nm
Photocurrent
IPCE = f (Ee), VCE = 5 V
Collector-Emitter Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
0
1
2
3
4
5
6
7
8
1E-03 1E-02 1E-01 1E+00 1E+01 1E+02
Vce
Cce
pF
V
Total Power Dissipation
Ptot = f (TA)
Dark Current
ICEO = f (VCE), E = 0
Dark Current
ICEO = f (TA), VCE = 20 V, E = 0
0.01
0.1
1
10
0 5 10 15 20 25 30 35
I
CEO
V
C
E
V
nA
0.01
0.1
1
10
100
1000
10000
-25 0 25 50 75 100
T
A
nA
I
CEO
°C
2007-03-30 6
BPX 81
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
GEOY6021
2.4 (0.094)
2.1 (0.083)
0.7 (0.028)
0.6 (0.024)
Collector (BPX 81)
Cathode (LD 261)
2.54 (0.100) spacing
1.5 (0.059)
2.1 (0.083)
2.7 (0.106)
2.5 (0.098)
3.2 (0.126)
3.6 (0.142)
3.0 (0.118)
3.5 (0.138)
1.9 (0.075)
1.7 (0.067)
position
Chip
0.25 (0.010)
0.15 (0.006)
1.4 (0.055)
1.0 (0.039)
A
A
0.4
0.5 (0.020)
0.4 (0.016)
Radiant sensitive area
(0.4 x 0.4)
Approx. weight 0.03 g
Detaching area for tools, flash not true to size.1)
5˚...0
BPX 81
2007-03-30 7
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assu red characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in que stion please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support dev ices or systems 2 with the expres s written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
