MRF544
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other
applications requiring high breakdown characteristics.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
Collector-Emitter Voltage 70
Vdc
V
CBO
Collector-Base Voltage 100 Vdc
V
EBO
Emitter-Base Voltage 3.0 Vdc
I
C
Collector Current 400 mA
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25ºC
Derate above 25ºC
3.5
20
Watts
mW/ ºC
1. Emitter
2. Base
3. Collector
TO-39
Features
• Silicon NPN, high Frequency, high breakdown Transistor
• Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
• High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
• High FT - 1400 MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF544
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
70
-
-
Vdc
BVCBO Collector-Base Breakdown Voltage
(IC= 100 µAdc, IE=0)
100
-
-
Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
3.0
-
- Vdc
ICBO Collector Cutoff Current
(VCE = 80 Vdc, IE = 0 Vdc)
-
-
20
µA
ICES Collector Cutoff Current
(VCE = 80 Vdc, IE = 0 Vdc)
-
1.0
100
µA
(on)
HFE DC Current Gain
(IC = 50 mAdc, VCE = 6.0 Vdc)
15
-
-
-
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
COB
Output Capacitance
(VCB = 10Vdc, IE=0, f=1 MHz)
-
2.5
-
pF
CIB
Input Capacitance
(VEB = 3Vdc, IE=0, f=1 MHz)
-
6.1
-
pF
f
T
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 250 MHz)
1000
1500
-
MHz
MRF544
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
FUNCTIONAL
Symbol Test Conditions Value
Min. Typ. Max. Unit
G
U max Maximum Unilateral Gain
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
-
13.5
-
dB
MAG Maximum Available Gain
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
-
13.5
-
dB
|S
21
|
2
Insertion Gain
IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
11.7
12.7
-
dB
Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA
f S11 S21 S12 S22
(MHz)
|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
100
0.221 -143 8.54 97 0.047 82 0.508 14
200
0.219 -108 4.36 87 0.091 87 0.413 49
300
0.250 -72 2.98 79 0.141 87 0.406 82
400
0.329 -34 2.39 72 0.178 84 0.445 108
500
0.338 9 2.11 70 0.237 87 0.409 140
600
0.348 51 1.83 65 0.292 86 0.412 176
700
0.371 94 1.61 61 0.35 86 0.411 -147
800
0.374 140 1.44 59 0.383 85 0.413 -112
900
0.402 -170 1.45 63 0.428 88 0.386 -78
1000
0.438 -126 1.56 64 0.503 86 0.405 -42
MRF544
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
