BFP193W NPN Silicon RF Transistor * For low noise, high-gain amplifiers up to 2 GHz 3 * For linear broadband amplifiers 2 4 * fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 * Pb-free (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking BFP193W RCs Pin Configuration 1=E 2=C 3=E 4=B - Package - SOT343 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 10 Total power dissipation1) Ptot 580 mW Junction temperature TJ 150 C Ambient temperature TA -55 ... 150 Storage temperature TStg -55 ... 150 V mA TS 66C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 145 K/W 1T S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2For 1 2012-04-13 BFP193W Electrical Characteristics at T A = 25C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 12 - - V ICES - - 100 A ICBO - - 100 nA IEBO - - 1 A hFE 70 100 140 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 30 mA, VCE = 8 V, pulse measured 2 2012-04-13 BFP193W Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT 6 8 - Ccb - 0.63 0.9 Cce - 0.36 - Ceb - 2.25 - AC Characteristics (verified by random sampling) Transition frequency GHz IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 1 - - 1.6 - - 20.5 - - 13.5 - IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum available1) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz IC = 30 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz |S21e|2 Transducer gain dB IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz - 15 - IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz - 9 - 1/2 ma = |S21 / S12| (k-(k-1) ) 1G 3 2012-04-13 BFP193W Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 3 600 mW K/W 500 RthJS Ptot 450 400 350 10 2 300 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 250 10 1 200 150 100 50 0 0 20 40 60 80 100 120 C 10 0 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp Permissible Pulse Load Ptotmax/PtotDC = (tp ) P totmax/PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2012-04-13 0 Package SOT343 BFP193W Package Outline 0.9 0.1 2 0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 0.1 3 2.1 0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 0.6 +0.1 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 5 2012-04-13 BFP193W Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2012-04-13