April 2008 Rev 5 1/9
9
X006
0.8 A sensitive gate SCRs
Features
IT(RMS) = 0.8 A
VDRM/VRRM = 600 V
IGT = 200 µA
Description
Thanks to highly sensitive triggering levels, the
X006 SCR series is suitable for all applications
where the available gate current is limited, such
as ground fault circuit interrupters, overvoltage
crowbar protection in low power supplies,
capacitive ignition circuits, etc.
Available in though-hole or surface-mount
packages, these devices are optimized in forward
voltage drop and inrush current capabilities, for
reduced power losses and high reliability in harsh
environments.
A
K
G
TO-92
(X00602A)
SOT-223
(X00602N)
A
A
K
G
A
KG
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Characteristics X006
2/9
1 Characteristics
Table 1. Absolute ratings (limiting values)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (180 °Conduction angle) TO-92 Tl = 85 °C 0.8 A
SOT-223 Ttab = 100 °C
IT(AV) Average on-state current (180 °Conduction angle) TO-92 Tl = 85 °C 0.5 A
SOT-223 Ttab = 100 °C
ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25 °C 10 A
tp = 10 ms 9
I²tI
²t Value for fusing tp = 10 ms Tj = 25 °C 0.4 A2S
dI/dt Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns F = 60 Hz Tj = 125 °C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125 °C 1 A
PG(AV) Average gate power dissipation Tj = 125 °C 0.1 W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125 °C
Table 2. Electrical characteristics
Symbol Test Conditions Value Unit
IGT VD = 12 V, RL = 140 Ω
MIN. 15 µA
MAX. 200
VGT MAX. 0.8 V
VGD VD = VDRM, RL = 3.3 kΩ , RGK = 1 kΩTj = 125 °C MIN. 0.2 V
VRG IRG = 10 µA MIN. 5 V
IHIT = 50 mA, RGK = 1 kΩMAX. 5 mA
ILIG = 1 mA, RGK = 1 kΩ MAX. 6 mA
dV/dt VD = 67% VDRM, RGK = 1 kΩTj = 125 °C MIN. 25 V/µs
VTM ITM = 1 A, tp = 380 µs Tj = 25 °C MAX. 1.35 V
Vt0 Threshold voltage Tj = 125 °C MAX. 0.85 V
RdDynamic resistance Tj = 125 °C MAX. 245 mΩ
IDRM
IRRM
VDRM = VRRM , RGK = 1 kΩ
Tj = 25 °C MAX. 1 µA
Tj = 125 °C MAX. 100
X006 Characteristics
3/9
Table 3. Thermal resistances
Symbol Parameter Value Unit
Rth(j-a) Junction to ambient (DC) TO-92 150
°C/W
S = 5 cm2SOT-223 60
Rth(j-l) Junction to lead (DC) TO-92 70
Rth(j-t) Junction to tab (DC) SOT-223 30
Figure 1. Maximum average power
dissipation versus average on-state
current
Figure 2. Average and DC on-state current
versus case temperature (TO-92)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0 0.1 0.2 0.3 0.4 0.5 0.6
P(W)
I (A)
T(AV)
α= 180°
360°
α
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 25 50 75 100 125
I (A)
T(AV)
T (°C)
l
α= 180°
D.C.
TO-92
Figure 3. Average and D.C. on-state current
versus ambient temperature (epoxy
printed circuit board FR4, copper
thickness = 35 µm, SCU = 0.5 cm2)
(TO-92)
Figure 4. Average and DC on-state current
versus case temperature (SOT-223)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 25 50 75 100 125
I (A)
T(AV)
T (°C)
amb
α= 180°
D.C.
TO-92
S = 0.5 cm
CU 2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 25 50 75 100 125
I (A)
T(AV)
T (°C)
tab
α= 180°
D.C.
SOT-223
Characteristics X006
4/9
Figure 5. Average and DC on-state current
versus ambient temperature (epoxy
PCB FR4, copper
thickness = 35 µm, SCU = 5 cm2)
(SOT-223)
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration (PCB FR4,
copper thickness = 35 µm, SCU = 0.5
cm2) (TO-92)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 25 50 75 100 125
I (A)
T(AV)
T (°C)
amb
α= 180°
D.C.
SOT-223
S = 0.5 cm
CU 2
0.01
0.10
1.00
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z/R
th(j-a) th(j-a)
t (s)
p
TO-92
S = 0.5 cm
CU 2
Figure 7. Relative variation of thermal
impedance junction to ambient
versus pulse duration (PCB FR4,
copper thickness = 35 µm, SCU = 0.5
cm2) (SOT-223)
Figure 8. Thermal resistance junction to
ambient versus copper surface
under tab (PCB FR4, copper
thickness = 35 µm) (SOT-223)
0.01
0.10
1.00
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z/R
th(j-a) th(j-a)
t (s)
p
SOT-223
S = 0.5 cm
CU 2
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
S(cm²)
R (°C/W)
th(j-a)
Figure 9. Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
Figure 10. Relative variation of holding
current versus gate-cathode
resistance (typical values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
T (°C)
j
I,I,I[T] /
GT H L j I ,I ,I [T =25°C]
GT H L j
IGT
IH& IL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
R(k)
GK
Ω
I [R ] / I [ =1k ]
HGK H
ΩR
GK
X006 Characteristics
5/9
Figure 15. On-state characteristics (maximum values)
Figure 11. Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values)
Figure 12. Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
0.1
1.0
10.0
100.0
1.0E-01 1.0E+00 1.0E+01
R(k)
GK Ω
dV/dt[R ] / dV/dt[ =1k ]
GK ΩRGK
V = 0.67 x V
D DRM
1
10
100
110
C (nF)
GK
dV/dt[C ] / dV/dt[ =1k ]
GK
ΩR
GK
V = 0.67 x V
R = 1k
D DRM
GK
Ω
Figure 13. Surge peak on-state current versus
number of cycles
Figure 14. Non repetitive surge peak on-state
current for a sinusoidal pulse with
width tP < 10ms, and corresponding
value of I2t
0
1
2
3
4
5
6
7
8
9
10
1 10 100 1000
I (A)
TSM
Number of cycles
Non repetitive
T initial=25°C
j
Repetitive
T =25°C
C
t =10ms
p
One cycle
1.E-01
1.E+00
1.E+01
1.E+02
0.01 0.10 1.00 10.00
I (A), I t (A s)
TSM 22
t (ms)
p
I t
2
ITSM
T initial = 25°C
j
0.01
0.10
1.00
10.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
I (A)
TM
V (V)
TM
Tj=125°C
T =25°C
j
V =0.85V
R =245m
T max.:
j
t0
dΩ
Ordering information scheme X006
6/9
2 Ordering information scheme
Figure 16. Ordering information scheme
X 006 02 M Z 1AA2
Blank
Sensitive SCR series
Sensitivity
Voltage
Package
Packing mode
Current
006 = 0.8 A
2AL2 = Ammopack
5AL2 = Tape & reel (TO-92)
5BA4 = Tape & reel (SOT-223)
02 = 200 µA
M = 600 V
A = TO-92 (A"Blank")
N = SOT-223 (N"No Blank”)
1AA2 = Bulk
X006 Package information
7/9
3 Package information
Epoxy meets UL94, V0
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com.
Table 4. TO-92 (plastic) dimensions
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.35 0.053
B 4.70 0.185
C 2.54 0.100
D 4.40 0.173
E 12.70 0.500
F 3.70 0.146
a 0.50 0.019
Table 5. SOT-223 dimensions
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.80 0.071
A1 0.02 0.10 0.001 0.004
B 0.60 0.70 0.85 0.024 0.027 0.033
B1 2.90 3.00 3.15 0.114 0.118 0.124
c 0.24 0.26 0.35 0.009 0.010 0.014
D(1)
1. Do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15mm (0.006inches)
6.30 6.50 6.70 0.248 0.256 0.264
e2.3 0.090
e1 4.6 0.181
E(1) 3.30 3.50 3.70 0.130 0.138 0.146
H 6.70 7.00 7.30 0.264 0.276 0.287
V10° max
A
F
C
B
a
DE
A
A1
e1
D
B1
HE
e
12
4
3
B
Vc
Ordering information X006
8/9
Figure 17. SOT-223 footprint (dimensions in mm)t
4 Ordering information
5 Revision history
3.25
1.32
7.805.16
1.32
2.30 0.95
Table 6. Ordering information
Order code Marking Package Weight Base qty Delivery mode
X00602MA 1AA2
X0602 MA TO-92 0.2 g
2500 Bulk
X00602MA 2AL2 2000 Ammopack
X00602MA 5AL2 2000 Tape and reel
X00602MN5BA4 X06 2M SOT-223 0.12 g 1000
Table 7. Document revision history
Date Revision Changes
Jan-2002 3 Last update.
08-Aug-2006 4 SOT-223 package added.
1-Apr-2008 5 Reformatted to current standards. Device X00605 removed.
Updated dimensions in Ta b l e 5 .
X006
9/9
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