BFG325W/XR - Philips Semiconductors / NXP Semiconductors

1. Product proﬁle

1.1 General description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.

1.2 Features

■High power gain

■Low noise ﬁgure

■High transition frequency

■Gold metallization ensures excellent reliability

1.3 Applications

■Intended for Radio Frequency (RF) front end applications in the GHz range, such as:

◆analog and digital cellular telephones

◆cordless telephones (Cordless Telephone (CT), Personal Communication

Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)

◆radar detectors

◆pagers

◆Satellite Antenna TeleVision (SATV) tuners

1.4 Quick reference data

BFG325W/XR

NPN 14 GHz wideband transistor

Rev. 01 — 2 February 2005 Product data sheet

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCBO collector-base voltage open emitter - - 15 V

VCEO collector-emitter voltage open base - - 6 V

ICcollector current (DC) - - 35 mA

Ptot total power dissipation Tsp ≤90 °C[1] - - 210 mW

hFE DC current gain IC= 15 mA; VCE =3V;

Tj=25°C60 100 200

CCBS collector-base

capacitance VCB = 5 V; f = 1 MHz;

emitter grounded - 0.27 0.4 pF

fTtransition frequency IC= 15 mA; VCE =3V;

f = 1 GHz; Tamb =25°C- 14 - GHz

Gmax maximum power gain[2] IC= 15 mA; VCE =3V;

f = 1.8 GHz; Tamb =25°C- 18.3 - dB

Product data sheet Rev. 01 — 2 February 2005 2 of 12

Philips Semiconductors BFG325W/XR

NPN 14 GHz wideband transistor

[1] Tsp is the temperature at the soldering point of the collector pin.

[2] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4.

2. Pinning information

3. Ordering information

4. Marking

[1] * = p: made in Hong Kong.

5. Limiting values

|s21|2insertion power gain IC= 15 mA; VCE =3V;

f = 1.8 GHz; Tamb =25°C;

ZS=Z

L=50Ω

-14-dB

NF noise ﬁgure Γs=Γopt; IC= 3 mA;

VCE =3V; f=2GHz - 1.1 - dB

Table 1: Quick reference data

…continued

Symbol Parameter Conditions Min Typ Max Unit

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

1 collector

2 emitter

3 base

4 emitter

sym086

2, 4

Table 3: Ordering information

Type number Package

Name Description Version

BFG325W/XR - plastic surface mounted package; reverse pinning;

4 leads SOT343R

Table 4: Marking codes

Type number Marking code[1]

BFG325W/XR A8*

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 15 V

VCEO collector-emitter voltage open base - 6 V

VEBO emitter-base voltage open collector - 2 V

Product data sheet Rev. 01 — 2 February 2005 3 of 12

Philips Semiconductors BFG325W/XR

NPN 14 GHz wideband transistor

[1] Tsp is the temperature at the soldering point of the collector pin.

6. Thermal characteristics

[1] Tsp is the temperature at the soldering point of the collector pin.

7. Characteristics

[1] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4.

K is the Rollet stability factor: where .

MSG = maximum stable gain.

ICcollector current (DC) - 35 mA

Ptot total power dissipation Tsp ≤90 °C[1] - 210 mW

Tstg storage temperature −65 +175 °C

Tjjunction temperature - 175 °C

Table 5: Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-sp) thermal resistance from junction to solder point Tsp ≤90 °C[1] 403 K/W

Table 7: Characteristics

=25

C; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off current IE= 0 A; VCB =5V --15nA

hFE DC current gain IC= 15 mA; VCE = 3 V 60 100 200

CCBS collector-base capacitance VCB = 5 V; f = 1 MHz; emitter grounded - 0.27 0.4 pF

CCES collector-emitter capacitance VCE = 5 V; f = 1 MHz; base grounded - 0.22 - pF

CEBS emitter-base capacitance VEB = 0.5 V; f = 1 MHz; collector grounded - 0.49 - pF

fTtransition frequency IC= 15 mA; VCE = 3 V; f = 1 GHz;

Tamb =25°C- 14 - GHz

Gmax maximum power gain[1] IC= 15 mA; VCE = 3 V; f = 1.8 GHz;

Tamb =25°C- 18.3 - dB

|s21|2insertion power gain IC= 15 mA; VCE =3V; T

amb =25°C;

ZS=Z

L=50Ω

f = 1.8 GHz - 14 - dB

f = 3 GHz - 10 - dB

NF noise ﬁgure Γs=Γopt; IC= 3 mA; VCE = 3 V; f = 2 GHz - 1.1 - dB

PL(1dB) output power at 1 dB gain

compression IC= 15 mA; VCE = 3 V; f = 1.8 GHz;

Tamb =25°C; ZS=Z

L=50Ω- 8.7 - dBm

IP3 third order intercept point IC= 15 mA; VCE = 3 V; f = 1.8 GHz;

Tamb =25°C; ZS=Z

L=50Ω- 19.4 - dBm

K1Ds

2s11 2

–s22 2

–+

×s12

-----------------------------------------------------------

=Ds s11 s22

×s12 s21

×–=

Product data sheet Rev. 01 — 2 February 2005 4 of 12

Philips Semiconductors BFG325W/XR

NPN 14 GHz wideband transistor

Fig 1. Power derating curve Fig 2. Collector current as a function of

collector-emitter voltage; typical values

IC= 0 mA; f = 1 MHz. IC= 15 mA; VCE =3V.

Fig 3. Collector-base capacitance as a function of

collector-base voltage; typical values Fig 4. Gain as a function of frequency; typical values

Tsp (°C)

0 20015050 100

001aac158

100

150

200

250

Ptot

(mW)

001aac159

VCE (V)

0653142

(mA)

IB = 350 µA

300 µA

250 µA

150 µA

100 µA

200 µA

50 µA

VCB (V)

054231

001aac160

0.26

0.30

0.34

CCBS

(pF)

0.22

001aac161

(dB)

f (MHz)

10 104

103

102

Gmax

MSG

s21 2

Product data sheet Rev. 01 — 2 February 2005 5 of 12

Philips Semiconductors BFG325W/XR

NPN 14 GHz wideband transistor

VCE =3V; I

C= 15 mA; Zo=50Ω.

Fig 5. Common emitter input reﬂection coefﬁcient (s11); typical values

VCE =3V; I

C=15mA.

Fig 6. Common emitter forward transmission coefﬁcient (s21); typical values

001aac162

90°

−90°

0.50.2

+0.2

−5

−2

−0.2

+0.5

−0.5

−1

110 0

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

3 GHz

40 MHz

001aac163

90°

−90°

−45°−135°

45°135°

0°

180°50 40 30 20 10

40 MHz 3 GHz

Product data sheet Rev. 01 — 2 February 2005 6 of 12

Philips Semiconductors BFG325W/XR

NPN 14 GHz wideband transistor

VCE =3V; I

C=15mA.

Fig 7. Common emitter reverse transmission coefﬁcient (s12); typical values

VCE =3V; I

C= 15 mA; Zo=50Ω.

Fig 8. Common emitter output reﬂection coefﬁcient (s22); typical values

001aac164

90°

−90°

−45°−135°

45°135°

0°

180°0.5 0.4 0.3 0.2 0.1

3 GHz

40 MHz

001aac165

90°

−90°

0.50.2

+0.2

−5

−2

−0.2

+0.5

−0.5

−1

110 0

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

40 MHz

3 GHz

Product data sheet Rev. 01 — 2 February 2005 7 of 12

Philips Semiconductors BFG325W/XR

NPN 14 GHz wideband transistor

8. Application information

Table 8: SPICE parameters of the BFG325 DIE

Sequence Parameter Value Unit

1 IS 26.6 aA

2 BF 200 -

3NF 1-

4 VAF 40 V

5 IKF 105 mA

6 ISE 2.3 fA

7 NE 2.114 -

8BR 10-

9NR 1-

10 VAR 2.5 V

11 IKR 10 A

12 ISC 0 aA

13 NC 1.5 -

14 RB 3.6 Ω

15 RE 1.5 Ω

16 RC 2.6 Ω

17 CJE 185.6 fF

18 VJE 890 mV

19 MJE 0.294 -

20 CJC 77.06 fF

21 VJC 601 mV

22 MJC 0.159 -

23 XCJC 1 -

24 FC 0.7 -

25 TF 8.1 ps

26 XTF 10 -

27 VTF 1000 V

28 ITF 150 mA

29 PTF 0 deg

30 TR 0 ns

31 KF 0 -

32 AF 1 -

33 TNOM 25 °C

34 EG 1.014 eV

35 XTB 0 -

36 XTI 8 -

37 Q1.AREA 2.5 -

Product data sheet Rev. 01 — 2 February 2005 8 of 12

Philips Semiconductors BFG325W/XR

NPN 14 GHz wideband transistor

Fig 9. Package equivalent circuit of SOT343R

Table 9: List of components; see Figure 9

Designation Value Unit

CCB 2fF

CBE 80 fF

CCE 80 fF

C_base_pad 67 fF

C_emitter_pad 142 fF

LC_wire 0.767 nH

LB_wire 0.842 nH

LE_wire 0.212 nH

LC_lead 0.28 nH

LB_lead 0.281 nH

LE_lead 0.1 nH

BJT1

C_base_pad

LB_wire

CCB

CHIP

LB_lead

CBE

LE_wire

LE_lead

LC_wire

LC_lead

CCE

C_emitter_pad

001aac166

Product data sheet Rev. 01 — 2 February 2005 9 of 12

Philips Semiconductors BFG325W/XR

NPN 14 GHz wideband transistor

9. Package outline

Fig 10. Package outline SOT343R

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT343R

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; reverse pinning; 4 leads SOT343R

wMB

97-05-21

UNIT A1

max bpcD E

b1HELpQwv

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10

0.7

0.5 2.2

1.8 1.35

1.15

2.2

2.0

1.3

0.2

0.10.21.15

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.23

0.13

Product data sheet Rev. 01 — 2 February 2005 10 of 12

Philips Semiconductors BFG325W/XR

NPN 14 GHz wideband transistor

10. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BFG325W_XR_1 20050202 Product data sheet - 9397 750 14246 -

Philips Semiconductors BFG325W/XR

NPN 14 GHz wideband transistor

Product data sheet Rev. 01 — 2 February 2005 11 of 12

11. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Level Data sheet status[1] Product status[2] [3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.Date of release: 2 February 2005

Document number: 9397 750 14246

Published in The Netherlands

Philips Semiconductors BFG325W/XR

NPN 14 GHz wideband transistor

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Application information. . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information . . . . . . . . . . . . . . . . . . . . 11