FMD 47-06KC5 FDM 47-06KC5 Advanced Technical Information CoolMOSTM 1) Pow er MOSFET with ID25 = 47 A VDSS = 600 V RDS(on) max = 0.045 HiPerDynTM FRED Buck and Boost Topologies Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge 3 3 ISOPLUS i4TM T 5 D 1 4 4 q D 1 T 2 FDM Features MOSFET T Symbol Conditions VDSS TVJ = 25C Maximum Ratings VGS ID25 ID90 TC = 25C TC = 90C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions ID = 11 A; TC = 25C 600 V 20 V 47 32 A A 1950 3 mJ mJ 50 V/ns Characteristic Values (TVJ = 25C, unless otherwise specified) min. RDSon VGS = 10 V; ID = 44 A VGS(th) VDS = VGS; ID = 3 mA IDSS VDS = VDSS; VGS = 0 V 2.5 TVJ = 25C TVJ = 125C typ. max. 40 45 3 3.5 V 10 A A 100 nA 50 IGSS VGS = 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 44 A 150 35 50 VGS = 10 V; VDS = 400 V ID = 44 A; RG = 3.3 30 20 100 10 tbd tbd tbd with heat transfer paste 0.25 RthJC RthCH 5 2 FMD td(on) tr td(off) tf Eon Eoff Erec off E72873 isolated back surface 6800 320 pF pF 190 (c) 2009 IXYS All rights reserved nC nC nC ns ns ns ns mJ mJ mJ 0.45 IXYS reserves the right to change limits, test conditions and dimensions. m K/W K/W * Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 40 pF) * Fast CoolMOSTM 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness * Enhanced total power density * HiPerDynTM FRED - consisting of series connected diodes - enhanced dynamic behaviour for high frequency operation Applications * Switched mode power supplies (SMPS) * Uninterruptible power supplies (UPS) * Power factor correction (PFC) Advantages * Easy assembly: no screws or isolation foils required * Space savings * High power density * High reliability 1) CoolMOSTM is a trademark of Infineon Technologies AG. 20090209a 1-3 http://store.iiic.cc/ Advanced Technical Information MOSFET T Symbol FMD 47-06KC5 FDM 47-06KC5 Source-Drain Diode Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 44 A; VGS = 0 V 0.9 trr QRM IRM IF = 44 A; -diF /dt = 100 A/s; VR = 400 V 600 17 60 max. 44 A 1.2 V ns C A Diode D (data for series connection) Symbol Conditions VRRM TVJ = 25C to 150C IF25 IF90 TC = 25C TC = 90C Symbol Conditions Maximum Ratings V 95 56 A A Characteristic Values min. VF 600 typ. max. IF = 30 A IF = 60 A TVJ = 25C 2.48 3.02 V V IF = 30 A IF = 60 A TVJ = 150C 1.89 2.45 A A IR VR = VRRM TVJ = 25C TVJ = 150C 1 0.2 A mA IFSM t = 10 ms (50 Hz), sine; TVJ = 45C 450 A IRM trr IF = 30 A; VR = 100 V; -diF /dt = 200 A/s TVJ = 25C 2 30 A ns RthJC RthCH 0.55 with heat transfer paste K/W K/W 0.25 Component Symbol Conditions TVJ Tstg operating storage VISOL IISOL < 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions Maximum Ratings -55...+150 -55...+125 C C 2500 V~ 20...120 N Characteristic Values min. CP coupling capacity between shorted pins and mounting tab in the case dS, dA dS, dA pin - pin pin - backside metal typ. 40 1.7 5.5 Weight max. pF mm mm 9 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved g 20090209a 2-3 http://store.iiic.cc/ Advanced Technical Information FMD 47-06KC5 FDM 47-06KC5 ISOPLUS i4TM Outline IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved 20090209a 3-3 http://store.iiic.cc/