LESHAN RADIO COMPANY, LTD.
LBAV99WT1 LBAV99RWT1–1/3
DEVICE MARKING
LBAV99WT1 = A7; LBAV99RWT1 = F7
MAXIMUM RATINGS (Each Diode)
Rating Symbol Value Unit
Reverse V oltag VR70 Vdc
Forward Current IF215 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
Repetitive Peak Reverse V oltage VRRM 70 V
A verage Rectified Forward IF(AV) 715 mA
Current (Note 1.)
(averaged over any 20 ms period)
Repetitive Peak Forward Current IFRM 450 mA
Non–Repetitive Peak Forward Current IFSM A
t = 1.0 µs 2.0
t = 1.0 ms 1.0
t = 1.0 S 0.5
1. FR–5 = 1.0 × 0.75 × 0.062 in.
Dual Serise
Switching Diodes
1
3
2
LBAV99WT1
LBAV99RWT1
LBAV99WT1
SOT-323 (SC-70)
LBAV99RWT1
SOT-323 (SC-70)
3
CATHODE/ANODE
ANODE
1CATHODE
2
LBAV99WT1
3
CATHODE/ANODE
CATHODE
1ANODE
2
LBAV99RWT1
LBAV99WT1 SOT–323(SC–70) 3000/Tape & Reel
LBAV99RWT1 SOT–323(SC–70) 3000/Tape & Reel
LBAV99WT1G SOT–323(SC–70) 3000/Tape & Reel
LBAV99RWT1G SOT–323(SC–70) 3000/Tape & Reel
Device Package Shipping
•Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
ORDERING INFORMATION
The LBAV99WT1 is a smaller package, equivalent to the LBAV99LT1.
Suggested Applications
• ESD Protection
• Polarity Reversal Protection
• Data Line Protection
• Inductive Load Protection
• Steering Logic
Features
LESHAN RADIO COMPANY, LTD.
LBAV99WT1 LBAV99RWT1–2/3
LBAV99WT1 LBAV99RWT1
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation PD200 mW
FR–5 Board, (Note 1.) T A = 25°C
Derate above 25°C 1.6 mW/°C
Thermal Resistance Junction to Ambient RθJA 625 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (Note 2.) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ,Tstg –65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic Symbol Mi n Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µA) V(BR) 70 –– Vdc
Reverse Voltage Leakage Current (VR = 70 Vdc) I R–– 2.5 µAdc
(VR = 25 Vdc, TJ = 150°C) –– 30
(VR = 70 Vdc, TJ = 150°C) –– 50
Diode Capacitance CD–– 1.5 pF
(VR = 0, f = 1.0 MHz)
Forward V oltage (IF = 1.0 mAdc) VF–– 715 mVdc
(IF = 10 mAdc) –– 855
(IF = 50 mAdc) –– 1000
(IF = 150 mAdc) –– 1250
Reverse Recovery T ime RL = 100 Ωtrr –– 6.0 ns
(IF=IR=10 mAdc, iR(REC)=1.0mAdc) (Figure 1)
Forward Recovery Voltage (IF = 10 mA, t r = 20 ns) VFR –– 1.75 V
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.
Notes: 3. t p » t rr
Figure 1. Recovery Time Equivalent Test Circuit
+10 V 2.0 k
820 Ω
100 µH0.1µF
D.U.T.
0.1 µF
50 Ω OUTPUT
PULSE
GENERATOR
t r
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
t pt
10%
90%
I F
I R
t rr t
i R(REC) = 1.0 mA
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i R(REC) = 1.0 mA)
INPUT SIGNAL
I F
V R
LESHAN RADIO COMPANY, LTD.
LBAV99WT1 LBAV99RWT1–3/3
100
10
1.0
0.1
0.2 0.4 0.6 0.8 1.0 1.2 0 10 20304050
10
1.0
0.1
0.01
0.001
02 4 6 8
0.68
0.64
0.60
0.56
0.52
IF , FORWARD CURRENT (mA)
VF , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage VR , REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
VR , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
IR , REVERSE CURRENT (µA)
CD DIODE CAPACITANCE (pF)
LBAV99WT1 LBAV99RWT1
