CAS100H12AM1 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode VDS1.2 kV RDS(on) (TJ = 25C) Not recommended for new designs. Replacement part: CAS120M12BM2 EOFF (TJ = 125C) Features * * * * * * 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) AlSiC Baseplate, AMB Si3N4 Substrate System Benefits * * * * * 16 m Enables Compact and Lightweight Systems High Efficiency Operation Ease of Transistor Gate Control Reduced Cooling Requirements Reduced System Cost Applications * * * * * High Power Converters Motor Drives Solar Inverters UPS and SMPS Induction Heating Part Number Package Marking CAS100H12AM1 Half-Bridge Module CAS100H12AM1 Test Conditions Notes Maximum Ratings (TC = 25C unless otherwise specified) Symbol M1,Rev. D Value Unit VDS Drain - Source Voltage 1.2 kV VGS Gate - Source Voltage -5/+20 V ID S100H12A Datasheet: CA Parameter 168 Continuous Drain Current 117 A VGS = 20V, TC=25C VGS = 20V, TC=90C ID(pulse) Pulsed Drain Current 400 A TJ Junction Temperature 150 C -55 to +125 C 6 kV AC, t=1min Measured from D1 to S2 TC ,TSTG Case and Storage Temperature Range Pulse width Limited by Tjmax,TC = 25C Visol Case Isolation Voltage LStray Stray Inductance 20 nH M Mounting Torque 2.94 Nm G Weight 150 g Clearance Distance 12.2 mm Terminal to terminal 17.3 mm Terminal to terminal 20.2 mm Terminal to base plate 568 W Creepage Distance Pd Power Dissipation Fig. 25 Measured without fasteners Subject to change without notice. www.cree.com Fig 24 1 Electrical Characteristics (TC = 25C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Drain - Source Breakdown Voltage Gate Threshold Voltage Min. Typ. Max. 1.2 Unit kV 2.0 2.5 2.6 3.1 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) On State Resistance V 1.8 VDS = VGS, ID = 50mA VDS = VGS, ID = 5mA, TJ = 150C 500 50 1250 0.25 16 20 20 24 A A m S VDS = 1200V, VGS = 0V VDS = 1200V, VGS = 0V, TJ = 150C VGS, = 20V, VDS = 0V VGS = 20V, ID = 100A VGS = 20V, ID = 100A, TJ = 150C VDS = 20V, ID = 100A gfs Transconductance Ciss Input Capacitance Coss Output Capacitance 0.970 Crss Reverse Transfer Capacitance 0.037 EON Turn-On Switching Energy (25C) ( 125C) 4.6 3.9 mJ EOff Turn-Off Switching Energy (25C) (125C) 1.7 1.8 mJ RG Internal Gate Resistance 1.25 f = 1MHz, VAC = 25mV QG Gate Charge 490 nC VDD= 600V, ID= 100A 32 Fig. 9 VDS = VGS, ID = 50mA, TJ = 150C 5 31 Note VDS = VGS, ID = 5mA 2.4 IDSS Test Conditions VGS, = 0V, ID = 100uA VDS = 20V, ID = 100A, TJ = 150C Fig. 7 Fig. 8 10.7 nF VDS = 600V, VGS = 0V f = 1MHz, VAC = 25mV VDD = 800V, VGS = +20V/-5V ID = 100A, RG = 5.1 Inductive Load = 200 H Note: IEC 60747-8-4 Definitions Fig. 16,17 Fig. 21 Fig. 18 Resistive Switching td(on) Turn-on delay time 58 ns tr(on) VS1/D2 fall time 90% to 10% 76 ns td(off) Turn-off delay time 82 ns tf(off) VS1/D2 rise time 10% to 90% 46 ns 2 CAS100H12AM1,Rev. D VDD = 800V, RLOAD = 8 VGS = +20/-5V RG = 5.1 Note: IEC 60747-8-4 Definitions Fig. 19, 20 Free-Wheeling SiC Schottky Diode Characteristics Symbol Parameter Min. Typ. Max. 1.8 2.2 Unit VSD Diode Forward Voltage QC Total Capacitive Charge 1.6 C tRR Reverse Recovery Time 47 ns ERR Reverse Recovery Energy 0.5 mJ 2.5 V Test Conditions Note IF = 100A, VGS = 0 Fig. 11 IF = 100A, TJ = 150C Fig. 12 IF = 100A, VR = 600V diF/dt = 2200A/s, TJ = 25C Thermal Characteristics Symbol Parameter Min. Typ. Max. RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.22 0.24 RthJCD Thermal Resistance Juction-to-Case for Diode 0.35 0.37 Unit Test Conditions Note C/W Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive VDS overshoots. Please Refer to application note: [CPWR-AN12] Design Considerations when using Cree SiC Modules. 3 CAS100H12AM1,Rev. D Typical Performance 200 180 160 140 120 VGS = 15 V 100 80 60 40 20 VGS = 10 V 2 4 140 120 100 80 60 40 VGS = 10 V 20 VGS = 5 V 0 0 VGS = 15 V 160 VGS = 20 V 6 8 10 12 VGS = 5 V 0 14 0 2 4 Drain-Source Voltage, VDS (V) VGS = 20 V 180 VGS = 15 V 120 VGS = 10 V 80 60 40 VGS = 5 V 1.0 0.8 0.6 0.4 Conditions: IDS = 100 A VGS = 20 V tp < 50 s 0.0 0 4 6 8 10 12 -55 14 -30 -5 VGS = 16 V 30 VGS = 18 V 20 VGS = 20 V 10 120 145 Conditions: IDS = 100 A tp < 50 s TJ = 25 C 40 TJ = -55 C 30 TJ = 150 C 20 10 0 0 -55 -30 -5 20 45 70 95 120 Junction Temperature, TJ (C) Figure 5. On-Resistance vs. Temperature for Various Gate-Source Voltages 4 95 50 On Resistance, RDS On (m) On Resistance, RDS On (m) VGS = 14 V 70 60 Conditions: IDS = 100 A tp < 50 s 40 45 Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Typical Output Characteristics TJ = 150C 50 20 Junction Temperature, TJ (C) Drain-Source Voltage, VDS (V) 60 14 1.2 0.2 2 12 1.4 On Resistance, RDS On (p.u.) Drain-Source Current, IDS (A) 140 0 10 1.6 160 20 8 Figure 2. Typical Output Characteristics TJ = 25C Conditions: TJ = 150 C tp < 50 s 100 6 Drain-Source Voltage, VDS (V) Figure 1. Typical Output Characteristics TJ = -55C 200 Conditions: TJ = 25 C tp < 50 s VGS = 20 V 180 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 200 Conditions: TJ = -55 C tp < 50 s CAS100H12AM1,Rev. D 145 12 13 14 15 16 17 18 19 Gate Source Voltage, VGS (V) Figure 6. On-Resistance vs. Gate Source Voltage for Various Temperature 20 Typical Performance 25 120 Conditions: VGS = 20 V tp < 50 s TJ = 150 C TJ = 100 C 15 Conditions: VDS = 20 V tp < 50 s 100 Drain-Source Current, IDS (A) On Resistance, RDS On (m) 20 TJ = -55 C TJ = 25 C 10 5 TJ = 150 C 80 TJ=25 C 60 40 TJ = -55 C 20 0 0 0 20 40 60 80 100 120 140 160 180 0 5 Drain Source Current, IDS (A) 15 20 Figure 8. Transfer Characteristics for Various Junction Temperatures Figure 7. On-Resistance vs. Drain Current for Various Temperatures -4.0 4.5 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 4 Conditions: TJ = -55 C tp < 50 s 3 IDS = 50 mA 2.5 IDS=5 mA 2 1.5 1 0.5 Conditions: VDS = VGS -25 Drain-Source Current, IDS (A) 3.5 Threshold Voltage, VGS(th) (V) 10 Drain-Source Voltage, VDS (V) -50 -75 -100 -125 -150 VGS = 0, -1, -2, -3 -4 -5 V -175 0 -55 -30 -5 20 45 70 95 120 145 Figure 10. Typical Diode Characteristics TJ = -55C Figure 9. Threshold Voltage vs Junction Temperature -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 -4.0 0.0 -200 Drain-Source Voltage, VDS (V) Junction Temperature, TJ (C) -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 -25 -50 -75 -100 -125 VGS = -3 V VGS = -4 and -5 V -150 VGS = 0 V VGS = -1 V VGS = -2 V Drain-Source Voltage, VDS (V) Figure 11. Typical Diode Characteristics TJ = 25C 5 Conditions: TJ = 150 C tp < 50 s CAS100H12AM1,Rev. D -175 -200 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) Conditions: TJ = 25 C tp < 50 s 0.0 0 0 -25 VGS = 0 V -50 VGS = -2 V -75 VGS = -5 V VGS = -1 V VGS = -4V VGS = -3 V -100 -125 -150 -175 Drain-Source Voltage, VDS (V) Figure 12. Typical Diode Characteristics TJ = 150C -200 Typical Performance -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 Conditions: TJ = -55 C tp < 50 s 0 Conditions: TJ = 25 C tp < 50 s Drain-Source Current, IDS (A) -50 VGS = 0 V -75 VGS = 20 V -100 VGS = 5 V VGS = 15 V -125 VGS = 10 V -150 -175 VGS = 5 V -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 -75 VGS = 20 V -100 VGS = 15 V -150 -175 -200 Drain-Source Voltage, VDS (V) Figure 14. Typical 3rd Quadrant Characteristics TJ = 25 C 0.0 1.E-07 Conditions: ftest = 1 MHz VAC = 25 mV 0 Conditions: TJ = 150 C tp < 50 s -25 -50 VGS = 0 V -75 VGS = 20 V -100 VGS = 15 V -125 VGS = 10 V 1.E-10 Crss 1.E-11 0 1.E-07 20 40 60 80 100 Drain-Source Voltage, VDS (V) Figure 15. Typical 3rd Quadrant Characteristics TJ = 150 C Figure 16. Typical Capacitances vs. Drain-Source Voltage (0 - 100V) 20 Conditions: ftest = 1 MHz VAC = 25 mV Conditions: IDS = 100 A IGS = 50 mA VDS = 800 V TJ = 25 C 15 Ciss Gate Charge, QG (nC) Capacitance (F) 1.E-09 -200 Drain-Source Voltage, VDS (V) Coss 1.E-09 1.E-10 10 5 0 Crss -5 1.E-11 0 100 200 300 400 500 Drain-Source Voltage, VDS (V) Figure 17. Typical Capacitances vs. Drain-Source Voltage (0 - 600V) 6 Coss -150 -175 1.E-08 Ciss 1.E-08 Capacitance (F) Drain-Source Current, IDS (A) VGS = 5 V -125 VGS = 10 V Figure 13. Typical 3rd Quadrant Characteristics TJ = -55 C -4.0 -50 VGS = 0 V -200 Drain-Source Voltage, VDS (V) -25 Drain-Source Current, IDS (A) -25 CAS100H12AM1,Rev. D 600 0 100 200 300 400 Gate-Source Voltage, VGS (V) Figure 18. Typical Gate Charge Characteristic 500 Typical Performance 250 200 200 150 td(on) 100 50 5 150 tr(off) 100 7 9 11 13 15 17 0 19 5 External Gate Resistor () 9 11 13 15 17 External Gate Resistor () 19 15.0 7 Conditions: VGS = +20V/-5V RG = 5.1 Ohms VDD = 800V TJ = 25 C, L = 200 H 6 5 Conditions: VGS = +20V/-5V IDS = 100 A VDD = 800V TJ = 25 C, L = 200 H 12.5 EON Switching Energy (mJ) Switching Energy (mJ) 7 Figure 20. Resistive Switching Times vs. RG (Turn off) Figure 19. Resistive Switching Times vs. RG (Turn on) 4 3 EOFF 2 EON 10.0 7.5 EOFF 5.0 2.5 1 0 0 20 40 60 80 100 120 0.0 140 5 Drain Current (A) 7 9 11 13 15 17 19 21 Gate Resistor () Figure 21. Clamped Inductive Switching Energy vs. Drain Current Figure 22. Clamped Inductive Switching Energy vs. Gate Resistance 5.0 600 4.5 Maximum Dissipated Power, Ptot (W) EON 4.0 Switching Energy (mJ) td(off) 50 0 3.5 3.0 2.5 2.0 EOFF 1.5 Conditions: VGS = +20V/-5V RG = 5.1 Ohms VDD = 800V IDS = 100 A, L = 200 H 1.0 0.5 0.0 0 25 Conditions: TJ 150 C 500 400 300 200 100 0 50 75 100 Junction Temperature, TJ ( C) 125 Figure 23. Clamped Inductive Switching Energy vs. Temperature 7 Conditions: VGS = +20V/-5V RLoad = 8 Ohms VDD = 800V TJ = 25 C tf(on) Time (nsec) Time (nsec) 250 Conditions: VGS = +20V/-5V RLoad = 8 Ohms VDD = 800V TJ = 25 C CAS100H12AM1,Rev. D 150 -50 -25 0 25 50 75 100 Case Temperature, TC (C) Figure 24. Power Dissipation Derating Curve 125 Typical Performance 1 Conditions: TJ 150 C 160 Junction-Case Thermal Response, Zth JC (C/W) Drain-Source Continous Current, IDS (DC) (A) 180 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 Case Temperature, TC (C) Figure 25. Continuous Current Derating Curve Figure 27. Resistive Switching Time Description 8 CAS100H12AM1,Rev. D 125 100E-3 D = 50% D = 30% D = 10% 10E-3 D = 5% D = 2% D = 1% 1E-3 D = 0.5% D = 0.2% 100E-6 10E-6 tp T Single Pulse 1E-6 10E-6 D = tp / T 100E-6 1E-3 10E-3 100E-3 1 Time, tp (sec) Figure 26. Transient Thermal Impedance - MOSFET 10 Circuit Diagram D1 M1 RG(int) D1 G1 G1 RTN S1/D2 M2 RG(int) D2 G2 G2 RTN S2 9 CAS100H12AM1,Rev. D Package Dimensions (mm) 10 CAS100H12AM1,Rev. D Package Dimensions (mm) Package Dimensions (mm) This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright (c) 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc. 11 CAS100H12AM1,Rev. D Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power