HMC618ALP3E v00.1014 Typical Applications Features The HMC618ALP3E is ideal for: Noise Figure: 0.75 dB * Cellular/3G and LTE/WiMAX/4G Gain: 19 dB * BTS & Infrastructure OIP3: 36 dBm * Repeaters and Femto Cells Single Supply: +3V to +5V * Public Safety Radios 50 Ohm Matched Input/Output TE 16 Lead 3x3mm SMT Package: 9 mm2 Functional Diagram General Description LE The HMC618ALP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618ALP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618ALP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E). B SO AMPLIFIERS - LOW NOISE - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Electrical Specifications O TA = +25 C, Rbias = 470 Ohm for Vdd1 = Vdd2 = 5V Parameter Vdd = 5 Vdc Min. Frequency Range Gain Typ. Max. Min. 1200 - 1700 19 Gain Variation Over Temperature Typ. Max. Min. 1700 - 2000 23 16 0.012 13.5 MHz 17 dB 0.008 dB/C Noise Figure 0.65 22.5 18 19.5 dB Output Return Loss 13 12.5 10 dB Output Power for 1 dB Compression (P1dB) 19 18 20 dBm 20.5 dBm 30.4 35.5 dBm Output Third Order Intercept (IP3) 16.5 20.5 29.4 89 20 0.85 20.5 33.5 Supply Current (Idd) 1.1 Units Input Return Loss Saturated Output Power (Psat) 0.75 Max. 2000 - 2200 19 0.008 0.85 Typ. 29.5 118 35 89 118 89 1.15 118 dB mA * Rbias resistor sets current, see application circuit herein 7-1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery and to place orders: Hittite Microwave Corporation, Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel * 978-250-3373 fax * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners.Support: apps@hittite.com HMC618ALP3E v00.1014 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz TA = +25 C, Rbias = 10K Ohm for Vdd1 = Vdd2 = 3V Vdd = 3 Vdc Parameter Min. Frequency Range Typ. Max. Min. Typ. 1200 - 1700 Gain 18 15 26 Output Return Loss 14 Output Power for 1 dB Compression (P1dB) 10 0.9 15 16 Output Third Order Intercept (IP3) 28 Supply Current (Idd) 47 65 MHz 15.8 dB 0.009 dB/C 1.2 dB 19 dB 13 11 dB 15 dBm 16 16 dBm 28 28 12 1.2 Units 17 15 47 0.9 13 65 47 LE Saturated Output Power (Psat) 12.5 0.009 1.1 Max. TE 0.8 Input Return Loss Typ. 2000 - 2200 18 0.009 Noise Figure Min. 1700 - 2000 22 Gain Variation Over Temperature Max. 65 dBm mA * Rbias resistor sets current, see application circuit herein 1700 to 2200 MHz Tune Broadband Gain & Return Loss [1] [2] 26 Gain vs. Temperature [1] B SO 24 S21 6 S22 -4 22 20 GAIN (dB) RESPONSE (dB) 16 AMPLIFIERS - LOW NOISE - SMT 7 Electrical Specifications 18 16 S11 -14 -24 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 14 12 3 1.6 1.7 1.8 FREQUENCY (GHz) Vdd=3V O Vdd=5V +25 C +85 C 2.3 - 40 C 0 22 20 RETURN LOSS (dB) -5 18 GAIN (dB) 2.2 Input Return Loss vs. Temperature [1] Gain vs. Temperature [2] 16 14 -10 -15 -20 12 -25 10 1.6 1.9 2 2.1 FREQUENCY (GHz) 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) +25 C [1] Vdd = 5V, Rbias = 470 Ohm +85 C 2.2 2.3 - 40 C 1.6 1.7 1.8 +25 C 1.9 2 2.1 FREQUENCY (GHz) +85 C 2.2 2.3 - 40 C [2] Vdd = 3V, Rbias = 10K Ohm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to place Chelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel * 978-250-3373 fax * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their Application respective owners. Support: apps@hittite.com 7-2 HMC618ALP3E v00.1014 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 1700 to 2200 MHz Tune Output Return Loss vs. Temperature [1] Reverse Isolation vs. Temperature [1] 0 -5 -10 ISOLATION (dB) RETURN LOSS (dB) -5 -10 -15 -15 -20 -25 -30 TE -20 -35 -25 -40 1.8 1.9 2 2.1 FREQUENCY (GHz) +25 C 2.2 +85 C 2.3 1.4 1.6 - 40 C 20 +25 C -40C 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) Vdd=5V 2.2 16 Vdd=3V 12 10 1.6 1.7 Vdd=3V 1.8 1.9 FREQUENCY (GHz) +25 C 2 +85 C 2.1 - 40 C O Output IP3 vs. Temperature [1] [2] 24 40 Vdd=5V 38 22 Vdd=5V 36 20 IP3 (dBm) Vdd=3V 18 18 14 2.3 Psat vs. Temperature [1] [2] Psat (dBm) +85 C 2.3 Output P1dB vs. Temperature [1] [2] B SO 0 2.2 Vdd=5V +85C 1 0.2 1.9 2 2.1 FREQUENCY (GHz) 22 1.2 0.4 1.8 24 1.6 0.6 1.7 +25 C - 40 C Noise Figure vs Temperature [1] [2] [3] 0.8 1.6 LE 1.7 P1dB (dBm) 1.6 NOISE FIGURE (dB) AMPLIFIERS - LOW NOISE - SMT 0 16 14 34 32 30 28 12 26 Vdd=3V 24 10 1.6 1.7 1.8 +25 C 1.9 2 2.1 FREQUENCY (GHz) +85 C 2.2 2.3 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) -40 C +25 C +85 C - 40 C [1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm [3] Measurement reference plane shown on evaluation PCB drawing. 7-3 Information furnished by Analog and Devices believedorders: to be accurate and reliable. However,Corporation, no For price, delivery, and to place Chelmsford, orders: Analog MA Devices, Inc., For price, delivery toisplace Hittite Microwave 2 Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel * 978-250-3373 fax * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Application Trademarks and registered trademarks are the property of their respective owners. Support: apps@hittite.com HMC618ALP3E v00.1014 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Output IP3 and Idd vs. Supply Voltage @ 1700 MHz [2] 38 140 37 120 36 120 35 100 34 100 33 80 32 80 31 60 30 60 29 40 27 20 IP3 (dBm) 140 TE 0 25 5 Output IP3 and Idd vs. Supply Voltage @ 2100 MHz [2] 39 37 140 120 36 120 100 34 100 32 80 30 60 40 28 40 20 26 20 0 24 B SO 38 80 60 5 0 4.5 5.5 5 IP3 IP3 Idd Idd 105 15 100 10 95 5 90 85 0 -8 -6 -4 -2 0 2 4 Pout(dBm), GAIN(dB), PAE(%) O Pout(dBm), GAIN(dB), PAE(%) 20 25 77 20 70 15 63 10 56 5 49 42 0 -14 -12 -10 INPUT POWER (dBm) Pout Gain -8 -6 -4 -2 0 2 4 INPUT POWER (dBm) PAE Idd [1] Vdd = 5V, Rbias = 470 Ohm Idd (mA) 110 Power Compression @ 1700 MHz [2] Idd (mA) 25 -10 5.5 VOLTAGE SUPPLY (V) VOLTAGE SUPPLY (V) Power Compression @ 1700 MHz [1] Idd (mA) 4.5 140 Idd (mA) IP3 (dBm) 35 25 Idd LE Output IP3 and Idd vs. Supply Voltage @ 2100 MHz [1] 27 0 5.5 IP3 Idd 29 5 VOLTAGE SUPPLY (V) IP3 31 20 4.5 VOLTAGE SUPPLY (V) 33 40 26 24 5.5 IP3 (dBm) 4.5 28 Idd (mA) 39 Idd (mA) IP3 (dBm) Output IP3 and Idd vs. Supply Voltage @ 1700 MHz [1] AMPLIFIERS - LOW NOISE - SMT 7 1700 to 2200 MHz Tune Pout Gain PAE Idd [2] Vdd = 3V, Rbias = 10K Ohm Information furnished by Analog and Devices believedorders: to be accurate and Microwave reliable. However,Corporation, no For price, 2 delivery, and to place Chelmsford, orders: Analog MA Devices, Inc., For price, delivery toisplace Hittite Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel * 978-250-3373 fax * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Support: apps@hittite.com Application 7-4 HMC618ALP3E v00.1014 1700 to 2200 MHz Tune 25 110 20 105 15 100 10 95 5 90 -7 -4 -1 2 PAE -11 -9 -7 -5 1 3 44 5 PAE 24 1.2 1 22 1 20 0.8 18 0.6 16 0.4 14 0.2 0.6 0.4 0.2 0 5 VOLTAGE SUPPLY (V) 0 12 5.5 2.7 P1dB 3 VOLTAGE SUPPLY (V) GAIN 3.3 P1dB Noise figure Gain, Power & Noise Figure vs. Supply Voltage @ 2100 MHz [2] 24 1.2 24 1 22 1 22 0.8 20 0.8 20 0.6 18 0.6 18 0.4 16 0.4 16 0.2 14 0.2 0 14 4.5 5 VOLTAGE SUPPLY (V) GAIN 5.5 P1dB Noise Figure [1] Vdd = 5V, Rbias = 470 Ohm GAIN (dB) & P1dB (dBm) 1.2 NOISE FIGURE (dB) 26 0 12 2.7 NOISE FIGURE (dB) O Gain, Power & Noise Figure vs. Supply Voltage @ 2100 MHz [1] GAIN (dB) & P1dB (dBm) -1 Gain Noise Figure 7-5 -3 1.2 0.8 GAIN 51 5 Gain, Power & Noise Figure vs. Supply Voltage @ 1700 MHz [2] B SO 4.5 58 NOISE FIGURE (dB) 14 10 Pout NOISE FIGURE (dB) GAIN (dB) & P1dB (dBm) 24 16 65 LE 26 18 15 Idd Gain, Power & Noise Figure vs. Supply Voltage @ 1700 MHz [1] 20 72 INPUT POWER (dBm) Gain Idd 22 20 -13 INPUT POWER (dBm) Pout 79 0 5 GAIN (dB) & P1dB (dBm) -10 25 TE 85 0 -13 Pout(dBm), GAIN(dB), PAE(%) Power Compression @ 2100 MHz [2] Idd (mA) Pout(dBm), GAIN(dB), PAE(%) Power Compression @ 2100 MHz [1] Idd (mA) AMPLIFIERS - LOW NOISE - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 3 VOLTAGE SUPPLY (V) GAIN 3.3 P1dB Noise Figure [2] Vdd = 3V, Rbias = 10K Ohm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery and to place orders: Hittite Microwave Corporation, Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel * 978-250-3373 fax * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners.Support: apps@hittite.com HMC618ALP3E v00.1014 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Gain, Noise Figure vs. Rbias @ 1700 MHz 22 1.2 40 21 1 35 20 0.8 19 0.6 18 0.4 GAIN (dB) 45 30 TE 25 20 17 1000 16 10000 100 Rbias(Ohms) 45 40 Vdd=3V 15 100 1000 10000 Rbias(Ohms) Vdd=3V 21 1 20 0.8 19 0.6 18 0.4 17 0.2 7 0 16 100 1000 10000 Rbias(Ohms) Vdd=3V Vdd=5V O Vdd=5V Vdd=5V Gain, Noise Figure vs. Rbias @ 2100 MHz B SO IP3 (dBm) 20 0 10000 NOISE FIGURE (dB) 35 25 0.2 Rbias(Ohms) Vdd=3V Output IP3 vs. Rbias @ 2100 MHz 30 1000 LE Vdd=5V GAIN (dB) 15 100 NOISE FIGURE (dB) IP3 (dBm) Output IP3 vs. Rbias @ 1700 MHz AMPLIFIERS - LOW NOISE - SMT 1700 to 2200 MHz Tune [1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No * or978-250-3373 fax * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication978-250-3343 or otherwise under anytel patent patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their Application respective owners. Support: apps@hittite.com 7-6 HMC618ALP3E v00.1014 1200 to 1700 MHz Tune Gain vs. Temperature [2] 28 28 26 26 24 24 GAIN (dB) GAIN (dB) Gain vs. Temperature [1] 22 22 20 TE 20 18 18 16 16 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 +85 C 1.7 1.1 1.2 0 1.8 - 40 C Input Return Loss vs. Temperature [2] -20 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 RETURN LOSS (dB) -15 B SO -10 -10 -15 -20 -25 -30 1.8 1 1.1 1.2 FREQUENCY (GHz) +25 C +85 C O -4 RETURN LOSS (dB) -4 -16 1.5 1.6 1.7 1.8 +85 C -40 C Output Return Loss vs. Temperature [2] 0 -12 1.4 +25 C 0 -8 1.3 FREQUENCY (GHz) -40 C Output Return Loss vs. Temperature [1] RETURN LOSS (dB) +85 C 1.7 -5 -25 -8 -12 -16 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -20 1 1.1 1.2 FREQUENCY (GHz) +25 C [1] Vdd = 5V, Rbias = 470 Ohm 7-7 1.6 0 -5 -20 1.3 1.4 1.5 FREQUENCY (GHz) +25 C - 40 C Input Return Loss vs. Temperature [1] -30 1 1.8 LE +25 C RETURN LOSS (dB) AMPLIFIERS - LOW NOISE - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz +85 C 1.3 1.4 1.5 1.6 1.7 1.8 FREQUENCY (GHz) -40 C +25 C +85 C -40 C [2] Vdd = 3V, Rbias = 10K Ohm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery and to place orders: Hittite Microwave Corporation, Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel * 978-250-3373 fax * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners.Support: apps@hittite.com HMC618ALP3E v00.1014 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Reverse Isolation vs. Temperature [2] 0 -10 -10 ISOLATION (dB) 0 -20 -30 -50 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) +25 C 1.6 1.7 +85 C 1.8 1 - 40 C 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) +25 C 1.6 1.7 +85 C 1.8 - 40 C LE 1 Noise Figure vs. Temperature [1] Noise Figure vs. Temperature [2] 1.6 1.6 1.4 1.4 1.2 1 0.8 0.6 0.4 0.2 0 1 B SO NOISE FIGURE (dB) -30 -40 -50 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) +25 C 1.6 +85 C 1.7 1.2 1 0.8 0.6 0.4 7 0.2 0 1.8 1 1.1 - 40 C Output P1dB vs. Temperature [1] 1.2 +25 C 1.3 1.4 1.5 FREQUENCY (GHz) 1.6 1.7 +85 C 1.8 - 40 C Output P1dB vs. Temperature [2] O 22 22 20 20 18 18 P1dB (dBm) P1dB (dBm) -20 TE -40 NOISE FIGURE (dB) ISOLATION (dB) Reverse Isolation vs. Temperature AMPLIFIERS - LOW NOISE - SMT 1200 to 1700 MHz Tune [1] 16 14 16 14 12 12 10 10 8 8 1 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) +25 C [1] Vdd = 5V, Rbias = 470 Ohm +85 C 1.6 1.7 1.8 - 40 C 1 1.1 1.2 +25 C 1.3 1.4 1.5 FREQUENCY (GHz) +85 C 1.6 1.7 1.8 - 40 C [2] Vdd = 3V, Rbias = 10K Ohm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel * 978-250-3373 fax * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners.Support: apps@hittite.com 7-8 HMC618ALP3E v00.1014 1200 to 1700 MHz Tune Psat vs. Temperature [2] 23 23 21 21 19 19 Psat (dBm) Psat (dBm) Psat vs. Temperature [1] 17 15 17 15 13 TE 13 11 11 9 9 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) +25 C 1.6 1.7 +85 C 1.8 1 - 40 C 1.1 1.2 1.3 1.4 1.5 FREQUENCY (GHz) +25 C 1.6 1.7 +85 C 1.8 - 40 C LE 1 Output IP3 vs. Temperature [2] Output IP3 vs. Temperature [1] 38 38 36 36 34 30 28 26 24 22 1 B SO 32 1.1 1.2 1.3 1.4 1.5 1.6 1.7 IP3 (dBm) 34 IP3 (dBm) AMPLIFIERS - LOW NOISE - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 32 30 28 26 24 22 1.8 1 1.1 1.2 FREQUENCY (GHz) +25 C +85 C 1.3 1.4 1.5 1.6 1.7 1.8 FREQUENCY (GHz) - 40 C +25 C +85 C - 40 C O Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Vdd1 = Vdd2 (V) 3V 5V Min (Ohms) 1K [3] 0 Rbias Max (Ohms) Open Circuit Open Circuit R1 (Ohms) Idd1 + Idd2 (mA) 1k 28 1.5k 34 10k 47 120 71 270 84 470 89 [1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm [3] With Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended. 7-9 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No tel * or978-250-3373 fax * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication978-250-3343 or otherwise under any patent patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners.Support: apps@hittite.com HMC618ALP3E v00.1014 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Rbias = 10 KOhm for 3V Rbias = 470 Ohm for 5V +6V RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 C Continuous Pdiss (T= 85 C) (derate 9.68 mW/C above 85 C) 0.63 W Thermal Resistance (channel to ground paddle) 103.4 C/W Storage Temperature -65 to +150 C Operating Temperature -40 to +85 C ESD Sensitivity (HBM) Class 1A, Passed 250V Vdd (Vdc) Idd (mA) 2.7 35 3.0 47 3.3 58 4.5 72 TE Drain Bias Voltage (Vdd1, Vdd2) 5.0 89 5.5 106 Note: Amplifier will operate over full voltage ranges shown above. LE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS B SO Outline Drawing AMPLIFIERS - LOW NOISE - SMT 7 O NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC618LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [1] Package Marking [2] 618 XXXX [1] Max peak reflow temperature of 260 C [2] 4-Digit lot number XXXX Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place Chelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place Microwave Corporation, 2 Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use,orders: nor for any Hittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No * or978-250-3373 * Order at www.hittite.com Phone:On-line 781-329-4700 * Order online at www.analog.com license is granted by implication 978-250-3343 or otherwise under any tel patent patent rights of Analogfax Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Support: apps@hittite.com Application 7 - 10 HMC618ALP3E v00.1014 Pin Description Function Description Interface Schematic 1, 3 - 5, 7, 9, 12, 14, 16 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 2 RFIN This pin is DC coupled and matched to 50 Ohms. 6, 10 GND This pin and ground paddle must be connected to RC/DC ground. 8 RES This pin is used to set the DC current of the amplifier by selection of the external bias resistor. See application circuit. 11 RFOUT This pin is matched to 50 Ohms. LE TE Pin Number B SO AMPLIFIERS - LOW NOISE - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 13, 15 Vdd2, Vdd1 Power Supply Voltage for the amplifier. External bypass capacitors of 1000 pF, and 0.47 F are required. O Application Circuit, 1700 to 2200 MHz Tune [1] Vdd = 5V, Rbias = 470 Ohm 7 - 11 [2] Vdd = 3V, Rbias = 10K Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and to placeChelmsford, orders: Analog MA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth Drive, 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel * 978-250-3373 fax * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their Application respective owners. Support: apps@hittite.com HMC618ALP3E v00.1014 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz TE LE B SO Evaluation PCB Ordering Information Content O Item Evaluation PCB HMC618ALP3E Evaluation PCB List of Materials for Evaluation PCB Part Number EV2HMC618ALP3 The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. AMPLIFIERS - LOW NOISE - SMT 7 Evaluation PCB, 1700 to 2200 MHz Tune Item Description J1, J2 PCB Mount SMA RF Connector J3 - J5 DC Pin C2, C4 1000 pF Capacitor, 0603 Pkg.. C3, C5 0.47 F Capacitor, Tantalum L1 15 nH, Inductor, 0603 Pkg. L3 6.8 nH, Inductor, 0603 Pkg. C6 220 pF Capacitor, 0402 Pkg. C1 10 nF Capacitor, 0402 Pkg. R1 470 Ohm resistor, 0402 Pkg. U1 HMC618LP3(E) Amplifier PCB [2] 120586 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery and to place orders: Hittite Microwave Corporation, Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel * 978-250-3373 fax * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners.Support: apps@hittite.com 7 - 12 HMC618ALP3E v00.1014 B SO LE TE Application Circuit, 1200 to 1700 MHz Tune O AMPLIFIERS - LOW NOISE - SMT 7 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz 7 - 13 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, 2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel * 978-250-3373 fax * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners.Support: apps@hittite.com HMC618ALP3E v00.1014 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz TE LE B SO Evaluation PCB Ordering Information Content O Item Evaluation PCB HMC618ALP3E Evaluation PCB List of Materials for Evaluation PCB Part Number EV1HMC618ALP3 The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. AMPLIFIERS - LOW NOISE - SMT 7 Evaluation PCB, 1200 to 1700 MHz Tune Item Description J1, J2 PCB Mount SMA RF Connector J3 - J5 DC Pin C1 10 nF Capacitor, 0402 Pkg. C2, C4 1000 pF Capacitor, 0603 Pkg.. C3, C5 0.47 F Capacitor, 0603 Pkg. C6 100 pF Capacitor, 0402 Pkg. C7 3 pF Capacitor, 0402 Pkg. L1 27 nH, Inductor, 0603 Pkg. L2 5.6 nH, Inductor, 0603 Pkg. L3 18 nH, Inductor, 0603 Pkg. R1 470 Ohm resistor, 0402 Pkg. U1 HMC618LP3(E) Amplifier PCB [1] 600-00077-00 Evaluation PCB [1] Circuit Board Material: Rogers 4350. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price,2delivery, and Drive, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery and to place orders: Microwave Corporation, Elizabeth 01824 responsibility is assumed by Analog Devices for its use, nor for anyHittite infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 978-250-3343 tel * 978-250-3373 fax * Order On-line at www.hittite.com Phone: 781-329-4700 * Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of theirApplication respective owners.Support: apps@hittite.com 7 - 14