2N4427.PDF 6-25-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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2N4427
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment.
Applications include amplifier; pre-driver, driver, and output
stages. Also suitable for oscillator
and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter 20 Vdc
VCBO Collector-Base Voltage 40 Vdc
VEBO Emitter-Base Voltage 2.0 Vdc
ICCollector Current 400 mA
Thermal Data
PDTotal Device Dissipation @ TA = 25ºC
Derate above 25ºC 1.0
5.71 Watts
mW/ ºC
1. Emitter
2. Base
3. Collector
TO-39
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor
•
• 1 Watt Minimum Power Output @ 175 MHz
•
• 500 MHz Current-Gain Bandwidth Product @ 50mA
•
• Power Gain, GPE = 10dB (Min) @ 175 MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
2N4427.PDF 6-25-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct
2N4427
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCER Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, RBE = 10 ohms) 40 - - Vdc
BVCEO Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0) 20 - - Vdc
ICEO Collector Cutoff Current
(VCE = 12 Vdc, IB = 0) - - 20 µA
ICEX Collector Cutoff Current
(VCE = 40 Vdc, VBE = -1.5 Vdc) - - 100 µA
IEBO Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0) - - 100 µA
(on)HFE DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 360 mAdc, VCE = 5.0 Vdc) 10
5-
-200
--
-
VCE(sat) Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc) - - 0.5 Vdc
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
fTCurrent-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) 500 - - MHz
COB Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz) -4.0 -pF
2N4427.PDF 6-25-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct
2N4427
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
FUNCTIONAL
Symbol Test Conditions Value
Min. Typ. Max. Unit
GPE Power Gain Test Circuit-Figure 1
Pin = 0.1 W, VCE = 12Vdc
f = 175 MHz 10 - - dB
Pout Output Power Test Circuit-Figure 1
Pin = 0.1 W, VCE = 12Vdc
f = 175 MHz 1.0 - - Watts
ηC
Collector Efficiency Test Circuit-Figure 1
Pin = 0.1 W, VCE = 12Vdc
f = 175 MHz 45 - - %
0.00
0.50
1.00
1.50
2.00
2.50
3.00
10.0 35.0 60.0 85.0 110.0 135.0 160.0 185.0 210.0
Pin (mWatts)
Pout (Watts)
Typical device performance
2N4427.PDF 6-25-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct
2N4427
POUT
(RL=50 OHMS)
Vcc = 12V
PIN
(RS=50 OHMS)
L1
L2
L4
L3
C1
C2
C3
C4
C6
C5
Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT,
AND EFFICIENCY SPECIFICATIONS.
L1: 2 TURNS No. 16 wire, 3/16” ID, 1/4” long L2: Ferrite choke, Z=450 ohms
L3: 2 TURNS No. 16 wire, 1/4” ID, 1/4” long L4: 4 TURNS No. 16 wire, 3/8” ID, 3/8” long
Capacitor values in pF unless Tuning capacitors are air variable
otherwise indicated.
.
2N4427.PDF 6-25-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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2N4427
Efficiency (%)
GPE Freq (MHz)
Freq (MHz)
Gu Max (dB)
IC max (mA)
Package
Device
IC max (mA)
RF (Low Power PA / General Purpose) Selection Guide
MACRO X MRF559 NPN 870 0.5 6.5 70 7.5 16 150
MACRO X MRF559 NPN 870 0.5 9.5 65 12.5 16 150
SO-8 MRF8372,R1,R2 NPN 870 0.75 855 12.5 16 200
POWER MACRO MRF557 NPN 870 1.5 855 12.5 16 400
POWER MACRO MRF557T NPN 870 1.5 855 12.5 16 400
MACRO X MRF559 NPN 512 0.5 10 65 7.5 16 150
MACRO X MRF559 NPN 512 0.5 13 60 12.5 16 150
TO-39 2N3866ANPN 400 110 45 28 30 400
SO-8 MRF3866, R1, R2 NPN 400 110 45 28 30 400
POWER MACRO MRF555 NPN 470 1.5 11 50 12.5 16 400
POWER MACRO MRF555T NPN 470 1.5 11 50 12.5 16 400
SO-8 MRF4427, R2 NPN 175 0.15 18 60 12 20 400
TO-39 2N4427 NPN 175 110 50 12 20 400
POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 16 500
POWER MACRO MRF553T NPN 175 1.5 11.5 50 12.5 16 500
TO-39 MRF607 NPN 175 1.75 11.5 50 12.5 16 330
TO-39 2N6255 NPN 175 37.8 50 12.5 18 1000
TO-72 2N5179 NPN 200 20 6 12 50
Pout (watts)
GPE (dB)
GPE VCC
BVCEO
Type
Packag
Device
Type
NF
(dB)
NF IC (mA)
NF VCE
GN (dB)
Ftau (MHz)
Ccb
(pF)
BVCEO
TO-39 2N5109 NPN 200 3 10 15 12 1200 3.5 20 400
TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400
SO-8 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400
TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50
TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40
TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150
TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30
TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50
MACRO T BFR91 NPN 500 1.9 2 5 11 16.5 5000 1 12 35
MACRO T BFR96 NPN 500 2 10 10 14.5 500 2.6 15 100
SO-8 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200
MACRO X MRF581A NPN 500 2 50 10 14 15 5000 15 200
Macro BFR90 NPN 500 2.4 2 10 15 18 5000 1 15 30
TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50
TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40
MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200
TO-39 MRF586 NPN 500 3 90 15 11 14.5 4500 2.2 17 200
MACRO X MRF951 NPN 1000 1.3 5 6 14 17 8000 0.45 10 100
MACRO X MRF571 NPN 1000 1.5 10 6 10 8000 1 10 70
MACRO T BFR91 NPN 1000 2.5 2 5 8 11 5000 1 12 35
MACRO T BFR90 NPN 1000 3 2 10 10 12.5 5000 1 15 30
TO-39 MRF545 PNP 14 1400 2 70 400
TO-39 MRF544 NPN 13.5 1500 70 400
1
2
3
3
1
2
3
4
1
4
8
5
Macro X
Power
Macro T SO-8
RF Low Power PA, LNA, and General Purpose Discrete Selector GuideRF Low Power PA, LNA, and General Purpose Discrete Selector Guide
Low Cost RF Plastic Package Options
2N4427.PDF 6-25-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct
2N4427