Ordering number: EN4717 395A 1853/29C4827 PNP/NPN Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output Applications Applications - High-definition CRT display video output. Wide-band amp. Features - Adoption of FBET process. - High fr : fp=300MHz. - High breakdown voltage : Vczo = 200V. - Small reverse transfer capacitance and excellent high- frequency characteristic : Cre= 2.2pF/NPN, 2.7pF/PNP. | - Possible to offer the 2541853/2SC4827 devices in a tape reel packaging, which facilitates automatic insertion. (.): PNP Absolute Maximum Ratings atTa=25C * unit Collector-to-Base Voltage Vcso ()200 Vv * Collector-to-Emitter Voltage Vero ()200 Vv Emitter-to-Base Voltage VEBO ()3 Vv Collector Current Ic ()200 mA * Collector Current(Pulse) lop ; ()300 mA Collector Dissipation Po 13 W Junction Temperature Tj 150C Storage Temperature Tstg 55to +150 C Electrical Characteristics at Ta= 25C . min typ max unit Collector Cutoff Current IcBo Vop=()150V In=0 (-)0.1 vA Emitter Cutoff Current IzBo Vep=()2V,Ic=0 (-)1.0 pA DC Current Gain hee) Vog=()10V,I=()10mA 603% 320% hpe(2) Vor=()10V Ic=()100mA 20 Gain-Bandwidth Product fr Voce =()30V Ic=(-)50mA 300 MHz Output Capacitance Cob Vop=()30V, f= 1MHz 2.7 pF (3.2). pF Reverse Transfer Capacitance Cre Vor =()30V, f=1MHz 2.2 pF . (2.7) pF C-E Saturation Voltage Vexisat) Ic=()30mA,Ip= ()3mA (-)10 V B-E Saturation Voltage VpEat) Ic=()30mA,Ip=()3mA (-)1.0. V %* : The 25A1853/28C4827 are classified by 10mA hpg as follows: Package Dimensions 2084B : (unit : mm) p15 _., re PE 60 D 120 100 E 200 | 160 F 320 rT 4 _ 5 nS : 10.5. wu y pee . 1: Emitter 2: Collector fey 3: Base 2311 ies SANYO : FLP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 62094MT (KOTO) AX-8133 No.4717-1/3 274 Mm 7997076 OO20ebs 364 285A 1853/2SC4827 V ~50 CE 28A1853 Collector Current,ic mA Ip=0 0 0 -2 -4 -6 -B ~10 -12 -14 -16 -18 Collector-to-Emitter Voltage,Vop V - Vee -20 160 Ic 2SA1853 Voz=-10V 3 8 E 8 8 6 ~40 Collector Current,i mA ~20 0 0 0.2 ~0.4 -06 -08 1.0 Base-to-Emitter Voltage, Var V 1.2 hre lec 25A1853 Veg=10V 8 DC Current Gain,hps = oO -10 -100 Collector Current,Ig mA $000 fr - le ts 25A1853 fan} 7 Vce= ~ 30V = } f | 3 N 3 i \ ex ZA < 3 LT B | 3 10 a 3s 7 o S| = 400 z 4 Collector Current,lg mA Ic - Vee 50 28C4827 450 40 < g 350uA t 30 300 = s 250, 5 3 20 200nA 5 150 3 = 10 100 50 0 =0 0 2 6 6 10 12 14 16 16 2 4 Collector-to-Emitter Voltage, Vo, V Ic _~ VBE 28C-4827 Vcoe=10V Collector Current,I mA 38388 8 8 n oO 0 0.2 0.4 06 0.8 1.0 4.2 Base-to-Emitter Voltage, Vpn V bre - Ic 28C4827 Vcr=10V 8 DC Current Gain,hpp > o 10 0) Collector Current[c mA fr - Ie E 25C4827 VcEe=30V 100 Gain-Bandwidth Product,fp MHz 10 100 Collector Current,I[ mA me 7997076 OOe0eb 210 275 Output Capacitance,Cob pF Collector-to-Emitter Collector Currentlg mA 25A1853/2SC4827 Cob, Cre - Vcp 853 f=1MHz _ o Reverse Transfer Capacitance,Cre pF So -1.0 -10 Collector-to-Base Voltage,Vcg V Vce - Ic 28A 1853 le/lg=10 + Saturation Voltage, Voricat) V o oo ~10 ~100 Collector Current,ic mA ASO Ta=25C Single pulse A Na = (For PNP, minus sign is omitted.) 2SA1 10 10 Collector-to-Emitter Voltage, Vcg V Output Capacitance,Cob pF Collector-to-Emitter Cob,Cre Vecp. 28C4827 f=1MHz o = >. Reverse Transfer Capacitance,Cre pF 10 1.0 : Collector-to-Base Voltage,Vcp V- Vce ~ Ic 28C4827 Ig/Ig=10 | 7 o Saturation Voltage, Vopisaty V 10. 100 Collector Current,Io mA Pc - Ta > = cad & zc a a R Collector Dissipation,P>. W 2. ND nan 60 60 1200 140 160 100 Ambient Temperature,Ta C 276 mm 7997076 0020270 T32 mm