3
CM200RL-12NF
Six IGBTMOD™ + Brake NF-Series Module
200 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Inverter Sector
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 6 7 8 Volts
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C — 1.7 2.2 Volts
IC = 200A, VGE = 15V, Tj = 125°C — 1.7 — Volts
Input Capacitance Cies — — 30.0 nf
Output Capacitance Coes VCE = 10V, VGE = 0V — — 3.7 nf
Reverse Transfer Capacitance Cres — — 1.2 nf
Total Gate Charge QG VCC = 300V, IC = 200A, VGE = 15V — 800 — nC
Inductive Turn-on Delay Time td(on) — — 120 ns
Load Turn-on Rise Time tr VCC = 300V, IC = 200A, — — 100 ns
Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, — — 300 ns
Time Turn-off Fall Time tf RG = 3.1Ω, IE = 200A, — — 300 ns
Reverse Recovery Time* trr Inductive Load Switching Operation — — 150 ns
Reverse Recovery Charge* Qrr — 4.8 — µC
Emitter-Collector Voltage* VEC IE = 200A, VGE = 0V — — 2.8 Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case** Rth(j-c)Q Per IGBT 1/6 Module — — 0.14 °C/W
Thermal Resistance, Junction to Case** Rth(j-c)D Per FWDi 1/6 Module — — 0.22 °C/W
Contact Thermal Resistance Rth(c-f) Per 1/6 Module, Thermal Grease Applied — 0.051 — °C/W
External Gate Resistance RG 3.1 — 31 Ω
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**TC, Tf measured point is just under the chips.