1C3D10060G Rev. H, 01-2017
C3D10060G
Silicon Carbide Schottky Diode
Z-Rec®
Features
Benets
Applications
Package
Part Number Package Marking
Maximum Ratings
Symbol Parameter Value Unit Test Conditions Note
V 600 V
V 600 V
V 600 V
A
T
T
T
ATP
TP
AT
T
ATP
TP
Ptot
T
T
VR=0-600V
i
ATP
TP
TJ
VRRM = 600 V
IF (TC=135˚C)
Qc
2C3D10060G Rev. H, 01-2017
40
50
60
70
80
90
100
Reverse Leakage Current, I
RR (mA)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 75 °C
T
= 25
°
C
0
10
20
30
0 100 200 300 400 500 600 700 800 900 1000
Reverse Leakage Current, I
Reverse Voltage, VR(V)
T
J
= -55 °C
T
J
= 25
°
C
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
VJ
J
R
VR = 600 V TJ
VR = 600 V TJ
Q
VR
it
TJ
VRJ
VRJ
VRJ
E VR
Thermal Characteristics
Symbol Parameter Typ. Unit Note
Rθ
Typical Performance
10
15
20
25
30
Foward Current, I
F(A)
T
J
= -55 °C
T
J
= 25 °C
T
J
= 75 °C
T
J
= 175 °C
T
J
= 125 °C
0
5
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Foward Current, I
Foward Voltage, VF(V)
IF (A)
VF (V) VR (V)
IR (mA)
3C3D10060G Rev. H, 01-2017
40
60
80
100
I
F(A)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
0
20
25 50 75 100 125 150 175
T
C
(°C)
60
80
100
120
140
160
PTOT
(W)
0
20
40
25 50 75 100 125 150 175
T
C
(°C)
Typical Performance
15
20
25
30
35
40
Capacitive Charge, Q
C
(nC)
Conditions:
T
J
= 25 °C
0
5
10
0 100 200 300 400 500 600 700
Capacitive Charge, Q
Reverse Voltage, V
R
(V)
200
250
300
350
400
450
500
Capacitance (pF)
Conditions:
TJ= 25 °C
Ftest = 1 MHz
Vtest = 25 mV
0
50
100
150
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, V
R
(V)
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
QC (nC)
VR (V)
4C3D10060G Rev. H, 01-2017
4
5
6
7
8
9
10
Capacitance Stored Energy, E
C
(µ
µ
µ
µJ)
0
1
2
3
0 100 200 300 400 500 600 700
Capacitance Stored Energy, E
Reverse Voltage, V
R
(V)
Typical Performance
VR (V)
EC(mJ)
100E-3
1
0.5
0.3
0.1
0.05
0.02
SinglePulse
1E-3
10E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
0.01
Thermal Resistance (˚C/W)
T (Sec)
100
1,000
IFSM (A)
TJ_initial = 25 °C
TJ_initial = 110 °C
10
10E-6 100E-6 1E-3 10E-3
Time, tp(s)
tp (s)
IFSM (A)
5C3D10060G Rev. H, 01-2017
10.668
15.990
2.540
1.540
8.890
3.556
Tjb May 2015
MX+DI
Recommended Solder Pad Layout
POS Inches Millimeters
Min Max Min Max
A 0.17 0.18 4.32 4.57
A1 - 0.01 - 0.25
b 0.028 0.037 0.71 0.94
b2 0.045 0.055 1.15 1.4
c 0.014 0.025 0.356 0.635
c2 0.048 0.055 1.22 1.4
D 0.35 0.37 8.89 9.4
D1 0.255 0.324 6.48 8.23
E 0.395 0.405 10.04 10.28
E1 0.31 0.318 7.88 8.08
e 0.1 BSC. 2.54 BSC.
L 0.58 0.62 14.73 15.75
L1 0.09 0.11 2.29 2.79
L2 0.045 0.055 1.15 1.39
L3 0.05 0.07 1.27 1.77
q0° 8° 0° 8°
Package Dimensions
Package TO-263-2
PIN 1
PIN 2
CASE
Note: Tab “M” may not be present
M
Part Number Package Marking
Note: Recommended soldering proles can be found in the applications note here:
66 C3D06060G Rev. H, 01-2018
Copyright © 2018 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the thresh-
old limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC
(RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative
or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
toequipmentusedintheoperationofnuclearfacilities,life-supportmachines,cardiacdebrillatorsorsimilaremergencymedical
equipment,aircraftnavigationorcommunicationorcontrolsystems,orairtrafccontrolsystems.
Notes
• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
RelatedLinks
Diode Model
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
T = VT T
VT J
RT J
