Data Sheet Schottky Barrier Diode RB531S-30 Applications General rectification Dimensions(Unit : mm) Land size figure(Unit : mm) 0.120.05 0.8 N 1.60.1 3)High reliability 1.20.05 Features 1)Ultra small mold type.(EMD2) 2)Low VF 1.7 0.6 0.80.05 EMD2 Construction Silicon epitaxial planer Structure 0.30.05 0.60.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 0.20.05 1.50.05 2.00.05 1.550.05 0.2 0.5 0.950.06 0.900.05 0 Empty pocket Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage(DC) Average rectified forward current Forward current surge peak(60Hz/1cyc) Junction temperature Storage temperature Electical voltage(Ta=25C) Parameter Forward voltage Reverse current www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 4.00.1 2.00.05 Limits C C Symbol VF Min. - Typ. - Max. 0.35 Unit V IR - - 10 A 1/3 0.760.05 0.750.05 Unit V mA mA 30 100 500 125 -40to+125 VR Io IFSM Tj Tstg 1.25 0.06 1.260.05 00 3.50.05 0.6 1.25 0.06 1.30.06 0 0 2.400.05 2.450.1 8.00.15 1.750.1 4.00.1 Conditions IF=10mA VR=10V 2011.03 - Rev.B Data Sheet RB531S-30 Electrical characteristics curves 100 Ta=125C 100 Ta=75C 10 Ta=-25C 1 Ta=25C 0.1 0.01 0.001 REVERSE CURRENT : IR(A) 1000 Ta=75C 100 Ta=25C 10 1 Ta=-25C 0.1 0.01 100 200 300 400 500 600 0 10 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 1 0 270 AVE : 270.2mV 260 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 280 20 15 10 AVE : 2.037A 5 0 VF DISPERSION MAP PEAK SURGE FORWARD CURRENT : IFSM(A) Ifsm 15 8.3ms 10 AVE : 3.90A 5 0 8.3ms 8.3ms 1cyc 5 10 IF=100mA FORWARD POWER DISSIPATION : Pf(W) Mounted on epoxy board 0.1 1 14 13 12 11 10 Ifsm t 5 1 10 100 0.1 0.08 0.08 D=1/2 DC 0.06 Sin(=180) 0.04 0.06 D=1/2 0.04 DC Sin(=180) 0.02 time 300s 0.01 AVE : 17.34pF 15 TIME : t(ms) IFSM-t CHARACTERISTICS 0.02 1ms 16 100 0.1 Rth(j-c) IM=10mA 17 NUMBER OF CYCLES IFSM -CYCLE CHARACTERISTICS IFSM DISRESION MAP 100 Ta=25C f=1MHz VR=0V n=10pcs 18 0 1 Rth(j-a) 20 10 Ifsm 0 1000 15 Ct DISPERSION MAP 10 1cyc 10 19 IR DISPERSION MAP 20 5 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 20 Ta=25C VR=10V n=30pcs 25 REVERSE CURRENT : IR(A) FORWARD VOLTAGE : VF(mV) 290 10 0.001 10 30 Ta=25C VF=10mA n=30pcs 250 TRANSIENT THAERMAL IMPEDANCE : Rth (C/W) 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 300 PEAK SURGE FORWARD CURRENT : IFSM(A) 20 f=1MH PEAK SURGE FORWARD CURRENT : IFSM(A) 0 REVERSE POWER DISSIPATION : PR (W) FORWARD CURRENT : IF(mA) Ta=125C CAPACITANCE BETWEEN TERMINALS : Ct(pF) 10000 1000 10 0 0 100 1000 TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 2/3 0.2 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 2011.03 - Rev.B Data Sheet RB531S-30 0.3 0A Io 0V VR t 0.2 DC T D=t/T VR=15V Tj=125C D=1/2 0.1 Sin(=180) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0.3 0A Io 0V VR t 0.2 DC T D=t/T VR=15V Tj=125C D=1/2 0.1 Sin(=180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE : Ta(C) Derating Curve"(Io-Ta) www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 125 0 25 50 75 100 125 CASE TEMPARATURE : Tc(C) Derating Curve"(Io-Tc) 3/3 2011.03 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A