97
.025" NPN Phototransistors
Molded Lensed Lateral PackageVTT7122H, 7123H, 7125H
PA CKAGE DIMENSIONS inch (mm)
CASE 7 LATERAL
CHIP TYPE: 25T
PRO DUCT DESCRIPTION
A small area high speed NPN silicon phototransistor
mounted in a lensed, side looking, transparent plastic,
transfer molded package. These devices are spectrally
and mechanically matched to the VTE717xH series of
IREDs.
ABSOLUTE MA XIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximu m Tempe r ature s
St or ag e Temperat ure: -4 0°C t o 85 °C
Oper ati ng Temp er a t ur e: -4 0°C to 85 °C
Continuous P ower Dissipation: 50 mW
Derate abo ve 30°C: 0.91 mW/°C
Maximu m Current: 25 mA
Lead Solder ing Temperature: 260°C
( 1.6 mm from case, 5 s ec . max.)
ELECTRO-OPT ICAL CHARAC TERISTICS @ 25°C (See also typical curves, pages 91-92)
Ref er to General Product Notes, page 2.
Pa rt Number
Light Current Dark Current Collector
Breakdown Emitter
Breakdown Saturation
Voltage Rise/Fall Time
Angular
Response θ1/2
lClCEO VBR(CEO) VBR(ECO) VCE(SAT) tR/tF
mA H
fc (mW/cm2)
VCE = 5.0 V
H = 0 lC = 100 µA
H = 0 lE = 100 µA
H = 0 lC = 1.0 mA
H = 400 fc lC = 1.0 mA
RL = 100 Ω
Min. Max. (nA)
Max. VCE
(Volts) Vo lts, Mi n. Vol t s, Mi n. Volts, M a x. µs e c, Typ. Typ.
VTT7122H 1.0 — 100 (5) 100 10 30 5.0 0.25 2.0 ±36°
VTT7123H 2.0 — 100 (5) 100 10 30 5.0 0.25 2.0 ±36°
VTT7125H 4.5 — 100 (5) 100 10 30 5.0 0.25 2.0 ±36°
Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.excelitas.com
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