Advanced Power N AND P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Simple Drive Requirement N-CH BVDSS 40V
▼ Good Thermal Performance RDS(ON)
26mΩ
▼ Fast Switching Performance ID8.3A
P-CH BVDSS -40V
RDS(ON)
40mΩ
Description ID-7A
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 40 -40 V
VGS Gate-Source Voltage ±16 ±16 V
ID@TA=25℃Continuous Drain Current3 8.3 -7.0 A
ID@TA=70℃Continuous Drain Current3 6.6 -5.6 A
IDM Pulsed Drain Current1 50 -50 A
PD@TA=25℃Total Power Dissipation W
Linear Derating Factor W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJOperating Junction Temperature Range -55 to 150 ℃
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 8 ℃/W
Rthj-a Thermal Resistance Junction-ambient3Max. 40 ℃/W
Data and specifications subject to change without notice
Parameter
200627071-1/7
Thermal Data
AP4525GEH-A
RoHS-compliant Product
3.125
0.025
S1
TO-252-4L
G1 S2G2
D1/D2
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
S1
G1
D1
S2
G2
D2
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=6A - - 26 mΩ
VGS=4.5V, ID=4A - - 32 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=6A - 6 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=40V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±16V - - ±30 uA
QgTotal Gate Charge2ID=6A - 9 14 nC
Qgs Gate-Source Charge VDS=20V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC
td(on) Turn-on Delay Time2VDS=20V - 7 - ns
trRise Time ID=6A - 20 - ns
td(off) Turn-off Delay Time RG=3Ω,VGS=10V - 20 - ns
tfFall Time RD=3.3Ω-4-
ns
Ciss Input Capacitance VGS=0V - 580 930 pF
Coss Output Capacitance VDS=25V - 100 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF
RgGate Resistance f=1.0MHz - 2 3 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=15A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=6A, VGS=0V - 20 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC
2/7
AP4525GEH-A
N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -40 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA - -0.03 - V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-5A - - 40 mΩ
VGS=-4.5V, ID=-3A - - 60 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.8 - -2.5 V
gfs Forward Transconductance VDS=-10V, ID=-5A - 5 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-40V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=-32V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=±16V - - ±30 uA
QgTotal Gate Charge2ID=-5A - 9 24 nC
Qgs Gate-Source Charge VDS=-20V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5 - nC
td(on) Turn-on Delay Time2VDS=-20V - 8.5 - ns
trRise Time ID=-5A - 15 - ns
td(off) Turn-off Delay Time RG=3Ω,VGS=-10V - 27 - ns
tfFall Time RD=4Ω-25-ns
Ciss Input Capacitance VGS=0V - 760 1220 pF
Coss Output Capacitance VDS=-25V - 150 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 105 - pF
RgGate Resistance f=1.0MHz - 6 9 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-12A, VGS=0V - - -1.3 V
trr Reverse Recovery Time2IS=-5A, VGS=0V - 20 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/7
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP4525GEH-A
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
N-Channel
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
4/7
AP4525GEH-A
0
10
20
30
40
50
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC 10V
7.0V
5.0V
4.5V
VG=3.0V
0
2
4
6
8
10
12
14
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0
10
20
30
40
50
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC 10V
7.0V
5.0V
4.5V
VG=3.0V
20
40
60
80
100
120
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=4A
TC=25oC
0.6
1.0
1.4
1.8
25 50 75 100 125 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D=6A
VG=10V
N-Channel
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
5/7
AP4525GEH-A
Q
VG
4.5V
QGS QGD
QG
Charge
0
4
8
12
0 5 10 15 20
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=6A
VDS =20V
10
100
1000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
10s
0
10
20
30
40
50
02468
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =5V
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Thermal Response (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + TA
Rthja=75℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P-Channel
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
6/7
AP4525GEH-A
0
10
20
30
40
50
0123456
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25oC -10V
-7.0V
-5.0V
-4.5V
VG=-3.0V
20
50
80
110
140
170
200
246810
-VGS ,Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID= -3A
TC=25oC
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
0
10
20
30
40
50
02468
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=150oC -10V
-7.0V
-5.0V
-4.5V
VG=-3.0V
0.8
1.0
1.2
1.4
1.6
25 50 75 100 125 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID= -5A
VG= -10V
0
2
4
6
8
10
12
14
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25oCTj=150oC
P-Channel
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
7/7
AP4525GEH-A
0
4
8
12
048121620
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID=-5A
VDS =-20V
10
100
1000
10000
1 5 9 1317212529
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
10s
0
10
20
30
40
50
02468
-VGS , Gate-to-Source Voltage (V)
-ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =-5V
Q
VG
-4.5V
QGS QGD
QG
Charge
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + TA
Rthja=75℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
Package Outline : TO-252(4L)
Millimeters
MIN NOM MAX
A 6.40 6.6 6.80
B 5.2 5.35 5.50
C 9.40 9.80 10.20
D 2.40 2.70 3.00
P
S 0.50 0.65 0.80
E3 E3 3.50 4.00 4.50
R 0.80 1.00 1.20
G 0.40 0.50 0.60
H 2.20 2.30 2.40
J 0.45 0.50 0.55
K 0.00 0.075 0.15
L 0.90 1.20 1.50
M 5.40 5.60 5.80
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-252(4L)
SYMBOLS
1.27 REF.
ADVANCED POWER ELECTRONICS CORP.
A
B
C
M
D
H
J
K
L
Part Number Package Code
XXXXGEH
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
LOGO
GS P
R
meet Rohs requirement
