AP4525GEH-A RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D1/D2 40V RDS(ON) Good Thermal Performance Fast Switching Performance S1 26m ID G1 S2 8.3A P-CH BVDSS G2 -40V RDS(ON) TO-252-4L 40m ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. -7A D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Units P-channel 40 -40 V 16 16 V Continuous Drain Current 3 8.3 -7.0 A Continuous Drain Current 3 6.6 -5.6 A 50 -50 A 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation 3.125 W Linear Derating Factor 0.025 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Value Unit Max. 8 /W Max. 40 /W Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 200627071-1/7 AP4525GEH-A o N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 40 - - V - 0.03 - V/ VGS=10V, ID=6A - - 26 m VGS=4.5V, ID=4A - - 32 m BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=6A - 6 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=40V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=32V, VGS=0V - - 25 uA Gate-Source Leakage VGS=16V - - 30 uA ID=6A - 9 14 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=20V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC 2 td(on) Turn-on Delay Time VDS=20V - 7 - ns tr Rise Time ID=6A - 20 - ns td(off) Turn-off Delay Time RG=3,VGS=10V - 20 - ns tf Fall Time RD=3.3 - 4 - ns Ciss Input Capacitance VGS=0V - 580 930 pF Coss Output Capacitance VDS=25V - 100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 2 3 Min. Typ. IS=15A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=6A, VGS=0V - 20 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 15 - nC 2/7 AP4525GEH-A P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -40 - - V - -0.03 - V/ VGS=-10V, ID=-5A - - 40 m VGS=-4.5V, ID=-3A - - 60 m -0.8 - -2.5 V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS 2 VDS=VGS, ID=-250uA VDS=-10V, ID=-5A - 5 - S o VDS=-40V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-32V, VGS=0V - - -25 uA Gate-Source Leakage VGS=16V - - 30 uA ID=-5A - 9 24 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=-250uA Max. Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-20V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5 - nC 2 td(on) Turn-on Delay Time VDS=-20V - 8.5 - ns tr Rise Time ID=-5A - 15 - ns td(off) Turn-off Delay Time RG=3,VGS=-10V - 27 - ns tf Fall Time RD=4 - 25 - ns Ciss Input Capacitance VGS=0V - 760 1220 pF Coss Output Capacitance VDS=-25V - 150 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 105 - pF Rg Gate Resistance f=1.0MHz - 6 9 Min. Typ. IS=-12A, VGS=0V - - -1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-5A, VGS=0V - 20 - ns Qrr Reverse Recovery Charge dI/dt=-100A/s - 16 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test. 3.N-CH , P-CH are same , mounted on 2oz FR4 board t 10s. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 3/7 AP4525GEH-A N-Channel 50 50 40 30 20 V G =3.0V 30 20 V G =3.0V 10 10 0 0 0 1 2 3 4 5 0 6 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 120 ID=6A V G =10V ID=4A T C =25 o C Normalized RDS(ON) 100 RDS(ON) (m) 10V 7.0V 5.0V 4.5V T C = 150 C ID , Drain Current (A) 40 ID , Drain Current (A) o 10V 7.0V 5.0V 4.5V o T C = 25 C 80 60 1.4 1.0 40 0.6 20 2 4 6 8 25 10 50 75 100 125 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 14 1.6 Normalized VGS(th) (V) 12 10 IS(A) T j =150 o C T j =25 o C 8 6 4 1.2 0.8 2 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 AP4525GEH-A N-Channel f=1.0MHz 1000 C iss I D =6A V DS =20V 8 C (pF) VGS , Gate to Source Voltage (V) 12 C oss 100 C rss 4 10 0 0 5 10 15 1 20 5 9 Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 10 100us 1ms 10ms 100ms 1s 1 o 0.1 T A =25 C Single Pulse 10s 0.01 Normalized Thermal Response (R thja) 100 ID (A) 13 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T A Rthja=75/W Single Pulse 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 VG V DS =5V ID , Drain Current (A) 40 T j =25 o C T j =150 o C QG 4.5V 30 QGS QGD 20 10 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 AP4525GEH-A P-Channel 50 50 40 30 V G = - 3.0V 20 -ID , Drain Current (A) -ID , Drain Current (A) 40 -10V -7.0V -5.0V -4.5V T C = 150 o C -10V -7.0V -5.0V -4.5V o T C = 25 C 30 20 V G = - 3.0V 10 10 0 0 0 1 2 3 4 5 0 6 2 -V DS , Drain-to-Source Voltage (V) 4 6 8 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 200 I D = -3 A I D = -5A V G = -10V T C =25 o C 170 Normalized RDS(ON) RDS(ON) (m) 1.4 140 110 80 1.2 1.0 50 0.8 20 2 4 6 8 25 10 -V GS ,Gate-to-Source Voltage (V) 50 75 100 125 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 14 1.6 Normalized -VGS(th) (V) 12 10 -IS(A) 8 6 T j =150 o C T j =25 o C 4 1.2 0.8 2 0 0.4 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 AP4525GEH-A P-Channel f=1.0MHz 10000 I D = -5 A V DS = - 2 0 V 8 1000 C iss C (pF) -VGS , Gate to Source Voltage (V) 12 4 C oss C rss 100 0 10 0 4 8 12 16 20 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 100us 10 -ID (A) Normalized Thermal Response (Rthja) Duty factor=0.5 1ms 10ms 100ms 1s 1 o 0.1 10s T A =25 C Single Pulse 0.01 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthja + T A 0.01 Rthja=75/W Single Pulse 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 VG V DS =-5V -ID , Drain Current (A) 40 T j =25 o C QG T j =150 o C 30 -4.5V QGS QGD 20 10 Charge Q 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7/7 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252(4L) A Millimeters SYMBOLS B MIN NOM MAX A 6.40 6.6 6.80 B 5.2 5.35 5.50 C 9.40 9.80 10.20 D 2.40 2.70 3.00 1.27 REF. P S E3 C M R D S P 0.50 0.65 0.80 E3 3.50 4.00 4.50 R 0.80 1.00 1.20 G 0.40 0.50 0.60 H 2.20 2.30 2.40 J 0.45 0.50 0.55 K 0.00 0.075 0.15 L 0.90 1.20 1.50 M 5.40 5.60 5.80 1.All Dimensions Are in Millimeters. G 2.Dimension Does Not Include Mold Protrusions. H K J L Part Marking Information & Packing : TO-252(4L) Part Number Package Code meet Rohs requirement XXXXGEH LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence