FDS6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. * 12.5 A, 30 V. RDS(ON) = 8 m @ VGS = 10 V RDS(ON) = 9.5 m @ VGS = 4.5 V * High performance trench technology for extremely low RDS(ON) Applications * Low gate charge (33 nC typical) * DC/DC converter * High power and current handling capability D D D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage 12 V ID Drain Current 12.5 A - Continuous (Note 1a) - Pulsed 50 Power Dissipation for Single Operation PD (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG W 1.0 -55 to +150 C (Note 1a) 50 C/W (Note 1) 25 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6672A FDS6672A 13'' 12mm 2500 units 2000 Fairchild Semiconductor Corporation FDS6672A Rev C(W) FDS6672A April 2001 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V 1 A IGSSF Gate-Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -12 V VDS = 0 V -100 nA 2.0 V On Characteristics 30 V 20 mV/C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 A, Referenced to 25C ID(on) On-State Drain Current VGS = 10 V, VGS = 4.5 V, VGS = 4.5 V, TJ=125C VGS = 10 V, gFS Forward Transconductance VDS = 10 V, 0.8 1.2 -4 6.8 8.2 11.5 ID = 14 A ID = 12.5 A ID = 12.5 A, VDS = 5 V mV/C 8 9.5 16 50 ID = 15 A m A 75 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf VDS = 15 V, V GS = 0 V, f = 1.0 MHz 5070 pF 550 pF 230 pF (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 17 25 ns 18 25 ns Turn-Off Delay Time 69 100 ns Turn-Off Fall Time 29 42 ns 33 46 nC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 15 V, ID = 15 A, VGS = 4.5 V 7.5 nC 6.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage (Note 2) 0.7 2.1 A 1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50/W when mounted on a 1in2 pad of 2 oz copper b) 105/W when mounted on a .04 in2 pad of 2 oz copper c) 125/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS6672A Rev C(W) FDS6672A Electrical Characteristics FDS6672A Typical Characteristics 50 1.5 ID, DRAIN CURRENT (A) 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.0V 40 2.5V 30 2.0V 20 10 VGS = 2.5V 1.3 3.0V 1.1 3.5V 4.0V 4.5V 0.9 0 0 0.5 1 0 1.5 10 20 Figure 1. On-Region Characteristics. 50 60 0.025 ID = 15A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 ID = 6 A 0.02 0.015 TA = 125oC 0.01 TA = 25oC 0.005 0 150 0 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) 60 VDS = 5V ID, DRAIN CURRENT (A) 30 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 45 30 TA = 125oC 25oC 15 -55oC VGS = 0V 10 TA = 125oC 1 25oC -55oC 0.1 0.01 0.001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6672A Rev C(W) FDS6672A Typical Characteristics 8000 ID = 12.5A f = 1MHz VGS = 0 V 10V VDS = 5V 4 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 15V 3 2 6000 CISS 4000 2000 1 COSS CRSS 0 0 0 10 20 30 40 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 25 30 50 P(pk), PEAK TRANSIENT POWER (W) 100s RDS(ON) LIMIT ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 100 1ms 10ms 100ms 1s 10s 10 1 DC VGS = 10V SINGLE PULSE RJA = 125oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 SINGLE PULSE RJA = 125C/W TA = 25C 40 30 20 10 0 0.001 100 0.01 0.1 1 10 100 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) + RJA RJA = 125C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6672A Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1