IRGP4050 - International Rectifier

IRGP4050

PDP Switch

n-channel

VCES = 250V

VCE(on) typ. = 1.64V

@VGE = 15V, IC = 30A

1www.irf.com

07/05/04

PD-95882

Features

Description

§ Key parameters optimized for PDP sustain &

Energy recovery applications

§ 104A continuous collector current

rating reduces component count

§ High pulse current rating makes it ideal for

capacitive load circuits

§ Low temperature co-efficient of VCE (ON) ensures

reduced power dissipation at operating junction

temperatures

§ Reverse voltage avalanche rating improves the

robustness in sustain driver application

§ Short fall & rise times for fast switching

This IGBT is specifically designed for sustain & energy recovery application

in plasma display panels. This IGBT features low VCE (ON) and fast switching

times to improve circuit efficiency and reliability. Low temperature co-efficient

of VCE (ON) makes this IGBT an ideal device for PDP sustain driver application. TO-247AC

*Package limited to 60A.

Absolute Maximum Ratings

Parameter Max. Units

VCES Collector-to-Emitter Voltage 250 V

IC @ TC = 25°C Continuous Collector Current 104* A

IC @ TC = 100°C Continuous Collector Current 56

ICM Pulse Collector Current

c

208

ILM Clamped Inductive Load current

290

VGE Gate-to-Emitter Voltage ±20 V

EARV Reverse Voltage Avalanche Energy

1240 mJ

PD @ TC = 25°C Maximum Power Dissipation 330 W

PD @ TC = 100°C Maximum Power Dissipation 130

TJOperating Junction and -55 to +150

TSTG Storage Temperature Range °C

Solder Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Thermal / Mechanical Characteristics

Parameter Min. T

p. Max. Units

RθJC Junction-to-Case- IGBT ––– ––– 0.38 °C/W

RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––

RθJA Junction-to-Ambient, typical socket mount ––– ––– 40

Wt Weight ––– 6 (0.21) ––– g (oz.)

IRGP4050

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Notes:

Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b )

VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a).

Repetitive rating; pulse width limited by maximum junction temperature.

Pulse width ≤ 2.5ms; duty factor ≤ 0.1%.

Pulse width 5.0µs, single shot.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)CES Collector-to-Emitter Breakdown Volta

e 250 — — V VGE = 0V, IC = 250

V(BR)ECS Emitter-to-Collector Breakdown Voltage

f

18 — — V VGE = 0V, IC = 1.0A

∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage —8.2—mV/°C

VGE = 0V, IC = 1mA

—1.641.90 IC = 30A

VCE(on) Collector-to-Emitter Saturation Voltage — 2.04 — V IC = 56A VGE = 15V

—2.60— IC = 104A, TJ = 150°C See Fi

. 2, 5

VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250

∆VGE(th)

∆TJThreshold Voltage temp. coefficient — -11 — mV/°C VCE = VGE, IC = 0.25mA

gfe Forward Transconductance

g

34 51 — S VCE = 100V, IC = 56A

ICES Zero Gate Voltage Collector Current — — 250 VGE = 0V, VCE = 250V

——2.0µA

VGE = 0V, VCE = 10V

— — 5000 VGE = 0V, VCE = 250V, TJ = 150°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

QgTotal Gate Charge (turn-on) — 230 350 IC = 56A

Qge Gate-to-Emitter Charge (turn-on) — 37 56 nC VCC = 200V See Fig. 8

Qgc Gate-to-Collector Charge (turn-on) — 78 120 VGE = 15V

td(on) Turn-On delay time — 37 — TJ = 25°C

trRise time — 35 — ns IC = 30A, VCC = 180V

td(off) Turn-Off delay time — 120 180 VGE = 15V, RG = 5.0Ω

tfFall time — 59 89 Energy losses include "tail"

Eon Turn-On Switching Loss — 45 — See Fig. 9, 10, 14

Eoff Turn-Off Switching Loss — 125 — µJ

ETS Total Switching Loss — 170 —

td(on) Turn-On delay time — 35 — TJ = 150°C

trRise time — 35 — ns IC = 30A, VCC = 180V

td(off) Turn-Off delay time — 130 — VGE = 15V, RG = 5.0Ω

tfFall time — 120 — Energy losses include "tail"

ETS Total Switching Loss — 280 — µJ See Fig. 11, 14

LEInternal Emitter Inductance — 13 — nH Measured 5mm from package

Cies Input Capacitance — 4650 — VGE = 0V

Coes Output Capacitance — 480 — pF VCC = 30V, See Fig. 7

Cres Reverse Transfer Capacitance — 92 — f = 1.0MHz

IRGP4050

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Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

0.1 110 100

VCE

, Collecto-to-Emitter Voltage (V)

0.1

100

1000

IC, Collector-to-Emitter Current (A)

VGE

= 15V

20µs PULSE WIDTH

TJ = 25°C

TJ = 150°C

0246810121416

VGE, Gate-to-Emitter Voltage (V)

0.01

0.1

100

1000

IC, Collector-to-Emitter Current (A)

TJ = 150°C

TJ = 25°C

VCC = 50V

20µs PULSE WIDTH

0.1 110 100

f , Frequency ( kHz )

100

120

140

Load Current ( A )

For both:

Duty cycle : 50%

Tj = 125°C

Tsink = 90°C

Gate drive as specified

Power Dissipation = 73W

Triangular wave:

Clamp voltage:

80% of rated

60% of rated

voltage

Ideal di odes

Square wave:

IRGP4050

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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs. Case

Temperature

-60 -40 -20 020 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

1.0

2.0

3.0

4.0

VCE , Collector-to Emitter Voltage (V)

IC = 112A

VGE = 15V

80µs PULSE WIDTH

IC = 56A

IC = 28A

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.0906 0.000350

0.0906 0.002209

0.2003 0.028536

τJ

τ1

τ2

τ2τ3

τ3

R1R2

R2R3

τC

Ci i/Ri

Ci= τi/Ri

25 50 75 100 125 150

TC , Case Temperature (°C)

100

120

Maximum DC Collector Current (A)

LIMITED BY PACKAGE

IRGP4050

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Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

050 100 150 200

VCE, Collector-toEmitter-Voltage(V)

100

1000

10000

100000

Capacitance (pF)

Cies

Coes

Cres

VGS = 0V, f = 1 MHZ

Cies = C ge + Cgd, C ce SHORTED

Cres = Cgc

Coes = Cce + Cgc

0 50 100 150 200

Q G, Total Gate Charge (nC)

VGE, Gate-to-Emitter Voltage (V)

VCES

= 200V

IC = 56A

0 5 10 15 20 25 30

RG, Gate Resistance (Ω)

800

1000

1200

1400

1600

1800

2000

2200

2400

Total Swiching Losses (µJ)

VCE = 200V

VGE = 15V

TJ = 25°C

IC = 56A

-55 -5 45 95 145

TJ, Juntion Temperature (°C)

1000

2000

3000

4000

5000

6000

7000

Total Swiching Losses (µJ)

RG = 5.0Ω



VGE

= 15V IC = 112A

IC = 56A

IC = 28A

IRGP4050

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Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

Fig. 12 - Turn-Off SOA

20 40 60 80 100 120

IC, Collecto-to-Emitter (A)

1000

2000

3000

4000

5000

6000

Total Swiching Losses (µJ)

RG = 5.0Ω

TJ = 150°C

VCE

= 200V

VGE

= 15V

110 100 1000

VDS, Drain-to-Source Voltage (V)

100

1000

IC, Collector-to-Emitter Current (A)

VGE = 20V

TJ = 125°

SAFE OPERATING AREA

IRGP4050

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480V

4 X IC@25°C

D.U.T.

50V

V *

* Driver same type as D.U.T.; Vc = 80% of Vce(max)

* Note: Due to the 50V power supply, pulse width and inductor

will increase to obtain rated Id.

1000V

Fig. 13a - Clamped Inductive

Load Test Circuit

Fig. 13b - Pulsed Collector

Current Test Circuit

480µF

960V

0 - 480V

RL =

t=5µs

d(on)

90%

d(off)

10%

90%

10%

off

ts on off

E = (E +E )

Fig. 14b - Switching Loss

Waveforms

50V

Driver*

1000V

D.U.T.

c

Fig. 14a - Switching Loss

Test Circuit

* Driver same type

as D.U.T., VC = 480V

IRGP4050

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Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.06/04

TO-247AC Part Marking Information

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Note: "P" in assembly line

position indicates "Lead-Free"

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/