1C4D10120A Rev. D, 10-2016
C4D10120A
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
• 1.2kVSchottkyRectier
• ZeroReverseRecoveryCurrent
• High-FrequencyOperation
• Temperature-IndependentSwitching
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies(SMPS)
• BoostdiodesinPFCorDC/DCstages
• FreeWheelingDiodesinInverterstages
• AC/DCconverters
Package
TO-220-2
Maximum Ratings (TC=25°Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 1200 V
VRSM SurgePeakReverseVoltage 1300 V
VRDCPeakReverseVoltage 1200 V
IFContinuousForwardCurrent
33
16
10
A
TC=25˚C
TC=135˚C
TC=156˚C
Fig.3
IFRM RepetitivePeakForwardSurgeCurrent 47
31.5 ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse
IFSM Non-RepetitiveForwardSurgeCurrent 71
59.5 ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse Fig.8
IF,Max Non-RepetitivePeakForwardCurrent 750
620 ATC=25˚C,tP=10ms,Pulse
TC=110˚C,tP=10ms,Pulse Fig.8
Ptot PowerDissipation 166.5
72 WTC=25˚C
TC=110˚C Fig.4
dV/dt DiodedV/dtruggedness 200 V/ns VR=0-960V
∫i2dt i2tvalue 25
17.5 A2sTC=25˚C,tP=10ms
TC=110˚C,tP=10ms
TJ OperatingJunctionRange -55to
+175 ˚C
Tstg StorageTemperatureRange -55to
+135 ˚C
TO-220MountingTorque 1
8.8
Nm
lbf-in
M3Screw
6-32Screw
Part Number Package Marking
C4D10120A TO-220-2 C4D10120
PIN1
PIN2 CASE
VRRM = 1200 V
IF (TC=135˚C) = 16 A
Qc = 52 nC
2C4D10120A Rev. D, 10-2016
0
2
4
6
8
10
12
14
16
18
20
00.5 11.5 22.5 33.5
I
F
Forward Current
V
F
Forward Voltage
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.5
2.2
1.8
3VIF=10ATJ=25°C
IF=10ATJ=175°C Fig.1
IRReverseCurrent 30
55
250
350 μA VR=1200VTJ=25°C
VR=1200VTJ=175°C Fig.2
QCTotalCapacitiveCharge 52 nC
VR=800V,IF=10A
di/dt=200A/μs
TJ=25°C
Fig.5
C TotalCapacitance
754
45
38
pF
VR=0V,TJ=25°C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
VR=800V,TJ=25˚C,f=1MHz
Fig.6
ECCapacitanceStoredEnergy 14.5 μJ VR=800V Fig.7
Note:Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
RθJC ThermalResistancefromJunctiontoCase 0.9 °C/W Fig.9
Typical Performance
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
0.00
100.00
200.00
300.00
400.00
500.00
600.00
0500 1000 1500 2000
I
R
Reverse Current (µA)
V
R
Reverse Voltage
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
IF (A)
VF (V) VR (V)
IR (μA)
3C4D10120A Rev. D, 10-2016
0
10
20
30
40
50
60
70
25
50
100
125
150
175
60
80
100
120
0
20
40
25
50
75
100
125
150
175
60.0
80.0
100.0
120.0
140.0
160.0
180.0
0.0
20.0
40.0
60.0
25 50 75 100 125 150 175
Figure5.RecoveryChargevs.ReverseVoltage Figure6.Capacitancevs.ReverseVoltage
Typical Performance
0
10
20
30
40
50
60
70
0200 400 600 800 1000
0
100
200
300
400
500
600
700
800
0.1 110 100 1000
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
Qc (nC)
VR (V)
10%Duty
20%Duty
30%Duty
50%Duty
70%Duty
DC
Figure3.CurrentDerating Figure4.PowerDerating
4C4D10120A Rev. D, 10-2016
10.0
15.0
20.0
25.0
Capacitive Energy (uJ)
0.0
5.0
0 200 400 600 800 1000
E
C
Capacitive Energy (uJ)
VRReverse Voltage (V)
Typical Performance
100
1000
IFSM(A)
10
1.E-05 1.E-04 1.E-03 1.E-02
tp(s)
1000
100
10
Figure7.TypicalCapacitanceStoredEnergy Figure8.Non-repetitivepeakforwardsurgecurrent
versuspulseduration(sinusoidalwaveform)
tp (s)
IFSM (A)
TJ_initial=25°C
TJ_initial=110°C
VR (V)
25
20
15
10
5
0
02004006008001000
EC(mJ)
1E-051E-041E-031E-02
Figure9.TransientThermalImpedance
10E
-
3
100E-3
1
Junction To Case Impedance, Z
thJC (oC/W)
0.5
0.3
0.1
0.05
0.02
0.01 SinglePulse
1E-3
10E
-
3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, Z
Time, t
p
(s)
Thermal Resistance (˚C/W)
T (Sec)
5C4D10120A Rev. D, 10-2016
POS Inches Millimeters
Min Max Min Max
A .381 .410 9.677 10.414
B .235 .255 5.969 6.477
C .100 .120 2.540 3.048
D .223 .337 5.664 8.560
D1 .457-.490 11.60-12.45 typ
D2 .277-.303 typ 7.04-7.70 typ
D3 .244-.252 typ 6.22-6.4 typ
E .590 .615 14.986 15.621
E1 .302 .326 7.68 8.28
E2 .227 251 5.77 6.37
F .143 .153 3.632 3.886
G 1.105 1.147 28.067 29.134
H .500 .550 12.700 13.970
L .025 .036 .635 .914
M .045 .055 1.143 1.550
N .195 .205 4.953 5.207
P .165 .185 4.191 4.699
Q .048 .054 1.219 1.372
S 3° 6° 3° 6°
T 3° 6° 3° 6°
U 3° 6° 3° 6°
V .094 .110 2.388 2.794
W .014 .025 .356 .635
X 3° 5.5° 3° 5.5°
Y .385 .410 9.779 10.414
z.130 .150 3.302 3.810
NOTE:
1. Dimension L, M, W apply for Solder Dip Finish
PIN 1
PIN 2
CASE
Recommended Solder Pad Layout
Part Number Package Marking
C4D10120A TO-220-2 C4D10120
TO-220-2
Note: Recommended soldering proles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
Package Dimensions
Package TO-220-2
66 C4D10120A Rev. D, 10-2016
Copyright © 2016 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/power/tools-and-support/product-ecology.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,orairtrafccontrolsystems.
Notes
RelatedLinks
• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Diode Model
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VfT=VT+If*RT
VT=0.98+(TJ*-1.71*10-3)
RT=0.040+(TJ*5.32*10-4)