INTEGRATED CIRCUITS DIVISION
DS-IXD_630-R04 www.ixysic.com 1
Features
30A Peak Source/ Sink Drive Current
High Operating Voltage Capability: 35V
-40°C to +125°C Extended Operating Temperature
Range
Under-Voltage Lock out Protection
Logic Input Withstands Negative Swing of up to 5V
Fast Rise an d Fall Times: < 20ns
Low Propaga tion Delay Time
Low 10A Supply Current
Low Output Impedance
Applications
Efficient Power MOSFET and IGBT Switching
Switch Mode Power Supplies
Motor Controls
DC to DC Converters
Class-D Switching Amplifiers
Pulse Transf ormer Driver
Description
The IXDD630/IXDI630/IXDN630 high-speed gate
drivers are especially w ell suit ed for driving the latest
IXYS pow er MOSFETs and IGBTs . The IXD_630
output can source and sink 30A of peak current while
producing voltage rise and fall times of less than 20ns.
Internal circuitry eliminates cross conduction and
current "shoot-through," and the driver is virtually
immune to latch up. Under-voltage lock o ut (UVLO )
circuitry holds the output LOW unt il sufficient supp ly
v olt age is applied (12.5V fo r the IXD_630 versions,
and 9V f or the IXD_630M versions). Lo w propagation
dela ys and fast , mat ched rise and fall times make the
IXD_630 family ideal f o r very high frequency and
high-pow er applications.
The IXDD630 is configured as a non-inverting driver
with an enab le. The IXDN630 is configured as a
non-inverting driver, and the IXDI630 is configured as
an inverting driver.
The IXD_630 f amily is available in a 5-pin T O-220 (CI),
and a 5-pin TO-263 (YI ) package .
Ordering Information
Part Number Logic
Configuration UVLO Package Type Packing
Method Quantity
IXDD630CI 12.5V 5-Pin TO-220 Tube 50
IXDD630MCI 9V 5-Pin TO-220 Tube 50
IXDD630YI 12.5V 5-Pin TO-263 Tube 50
IXDD630MYI 9V 5-Pin TO-263 Tube 50
IXDI630CI 12.5V 5-Pin TO-220 Tube 50
IXDI630MCI 9V 5-Pin TO-220 Tube 50
IXDI630YI 12.5V 5-Pin TO-263 Tube 50
IXDI630MYI 9V 5-Pin TO-263 Tube 50
IXDN630CI 12.5V 5-Pin TO-220 Tube 50
IXDN630MCI 9V 5-Pin TO-220 Tube 50
IXDN630YI 12.5V 5-Pin TO-263 Tube 50
IXDN630MYI 9V 5-Pin TO-263 Tube 50
IN
EN
OUT
INOUT
INOUT
IXD_630
30-Ampere Low-Side
Ultrafast MOSFET Drivers
INTEGRATED CIRCUITS DIVISION
IXD_630
2www.ixysic.com R04
1. Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Lead Configurations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Lead Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.4 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.5 Electrical Characteristics: TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.6 Electrical Characteristics: TA = - 40°C to +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.7 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 IXDD630 Block Diagram & Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 IXDI630 Block Diagram & Truth Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.3 IXDN630 Block Diagram & Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3. Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4. Manufacturing Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 Moisture Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2 ESD Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.3 Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.4 Board Wash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.5 Mechanical Dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
INTEGRATED CIRCUITS DIVISION
IXD_630
R04 www.ixysic.com 3
1 Specifications
1.1 Lead Configurations 1.2 Lead Definitions
1.3 Absolut e Max imum Rating s
Unless stated otherwise , a bsolute maximum electrical ratings are at 25°C
Absolute maximum ratings are stress r a tings. Stresses in excess of these ratings can cause permanent damage to the device.
Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not
implied.
1
4
3
2
5
V
CC
OUT
GND
IN
EN
1
4
3
2
5
V
CC
OUT
GND
IN
NC
1
4
3
2
5
V
CC
OUT
GND
IN
NC
IXDD630 CI / YI
IXDI630 CI / YI
IXDN630 CI / YI
Lead Name Description
IN Logic Input
EN
Output Enable - Drive lead low to disable
output, and force output to a high impedance
state
OUT Output - Sources or sinks current to turn-on or
turn-off a discrete MOSFET or IGBT
OUT Inverted Output - Sources or sinks current to
turn-on or turn-off a discrete MOSFET or IGBT
VCC Supply Voltage - Provides power to the device
GND Ground - Common ground reference for the
device
NC Not connected
Parameter Symbol Minimum Maximum Units
Supply Voltage VCC -0.3 40 V
Input Voltage Range VIN , VEN -5 VCC+0.3 V
Output Current IOUT 30A
Junction Temperature TJ-55 +150 °C
Storage Temperature TSTG -65 +150 °C
INTEGRATED CIRCUITS DIVISION
IXD_630
4www.ixysic.com R04
1.4 Recommended Operating Conditions
1.5 Electrical Ch ara ct e ri st ic s: TA = 25°C
Test Conditions: UVLO < VCC < 35V (unless otherwise noted).
Parameter Symbol Range Units
Supply Voltage VCC UVLO to 35 V
Operating Temperature Range T
A-40 to +125 °C
Parameter Conditions Symbol Minimum Typical Maximum Units
Input Voltage, High UVLO < VCC < 18V VIH 3.5 - - V
Input Voltage, Low UVLO < VCC < 18V VIL --0.8
Input Current 0V < VIN < VCC IIN --±10A
EN Input Voltage, High IXDD630 only VENH 2/3VCC --
V
EN Input Voltage, Low IXDD630 only VENL --
1/3VCC
Output Voltage, High - VOH VCC-0.025 --
V
Output Voltage, Low - VOL - - 0.025
Output Resistance, High State VCC=18V, IOUT= -100mA ROH -0.170.4
Output Resistance, Low State VCC=18V, IOUT=100mA ROL -0.160.3
Output Current, Continuous Limited by package power
dissipation IDC --±8A
Rise Time CLOAD=5.6nF, VCC=18V tr-1120
ns
Fall Time CLOAD=5.6nF, VCC=18V tf-1118
On-Time Propagation Delay CLOAD=5.6nF, VCC=18V tondly -4665
Off-Time Propagation Delay CLOAD=5.6nF, VCC=18V toffdly -4665
Output Enable Time IXDD630 only tPZL, tPZH -3465
Output Disable Time IXDD630 only tPLZ, tPHZ -65125
Enable Pull-Up Resistor IXDD630 only REN -400-k
Power Supply Current
VCC=18V, VIN=3.5V
ICC
-2.54mA
VCC=18V, VIN=0V - - 0.75 mA
VCC=18V, VIN=VCC - - 0.75
Under-Voltage Lockout Threshold
VCC Rising, IXD_630M UVLO 799.9
V
VCC Rising, IXD_630 10 12.5 13.5
Under-Voltage Lockout Hysteresis IXD_630M --1-
V
IXD_630 -1.5-
INTEGRATED CIRCUITS DIVISION
IXD_630
R04 www.ixysic.com 5
1.6 Electrical Ch ara ct e ri st ic s: TA = - 40°C to +125°C
Test Conditions: UVLO < VCC < 35V, TJ<150°C.
1.7 Thermal Characteristics
Parameter Conditions Symbol Minimum Maximum Units
Input Voltage, High UVLO < VCC < 18V VIH 4-
V
Input Voltage, Low UVLO < VCC < 18V VIL -0.8
Output Resistance, High State VCC=18V, IOUT= -100mA ROH -0.6
Output Resistance, Low State VCC=18V, IOUT=100mA ROL -0.45
Rise Time CLOAD=5.6nF, VCC=18V tr-35
ns
Fall Time CLOAD=5.6nF, VCC=18V tf-35
On-Time Propagation Delay CLOAD=5.6nF, VCC=18V tondly -100
Off-Time Propagation Delay CLOAD=5.6nF, VCC=18V toffdly -100
Package Parameter Symbol Rating Units
IXD_630CI (5-Lead TO-220) Thermal Impedance, Junction-to-Ambient JA 36 °C/W
IXD_630YI (5-Lead TO-263) 46
IXD_630CI (5-Lead TO-220) Thermal Impedance, Junction-to-Case JC 3°C/W
IXD_630YI (5-Lead TO-263) 2
INTEGRATED CIRCUITS DIVISION
IXD_630
6www.ixysic.com R04
2 Functional Description
2.1 IXDD630 Block Diagram & Truth Table
2.2 IXDI630 Block Diagram & Truth Table
2.3 IXDN630 Block Diagram & Truth Table
IN EN OUT
0 1 or open 0
1 1 or open 1
00
Z
10
Z
IN OUT
01
10
GND
IN
EN
IXDD630
V
CC
OUT
UVLO
GND
IN
IXDI630
VCC
OUT
UVLO
IN OUT
00
11
GND
IN
IXDN630
VCC
OUT
UVLO
INTEGRATED CIRCUITS DIVISION
IXD_630
R04 www.ixysic.com 7
3 Typical Performance Characteristics
Load Capacitance (nF)
0 50 100 150 200
Rise Time (ns)
0
20
40
60
80
100 Rise Time vs. Load Capacitance
VCC=10V
VCC=12V,18V,25V,30V,35V
Supply V oltage (V)
10 15 20 25 30 35
Fall Time (ns)
0
10
20
30
40
50
60
70
80
90
100
110
Fall Time vs. Supply Voltage
(VIN=0-5V, f=10kHz, TA=25ºC)
CLOAD=50nF
CLOAD=25nF
CLOAD=200nF
CLOAD=100nF
CLOAD=10nF
Supply V oltage (V)
10 15 20 25 30 35
Rise Time (ns)
0
10
20
30
40
50
60
70
80
90
100
110
Rise Time vs. Supply V oltage
(VIN=0-5V, f=10kHz, TA=25ºC)
CLOAD=50nF
CLOAD=25nF
CLOAD=200nF
CLOAD=100nF
CLOAD=10nF
Load Capacitance (nF)
0 50 100 150 200
Fall Time (ns)
0
20
40
60
80
100 Fall Time vs. Load Capacitance
VCC=10V
VCC=12V
VCC=18V
VCC=25V
VCC=30V
VCC=35V
Supply V oltage (V)
10 15 20 25 30 35
Input Threshold (V)
2.0
2.5
3.0
3.5
4.0
Input Threshold
vs. Supply Voltage
Min VIH
Max VIL
Temperature (ºC)
-50 -30 -10 10 30 50 70 90 110 130
Input Threshold (V)
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
Input Threshold vs. Temperature
(VCC=18V, CLOAD=5.6nF)
Min VIH
Max VIL
Input V oltage (V)
0 5 10 15 20 25 30
Propagation Delay (ns)
0
20
40
60
80
100
Propagation Delay vs. Input Voltage
(VCC=25V, CLOAD=5.6nF, f=1kHz)
toffdly
tondly
Supply V oltage (V)
5 101520253035
Propagation Delay (ns)
20
30
40
50
60
70
80
90
Propagation Delay vs. Supply Voltage
(VIN=0-5V, CLOAD=5.6nF, f=1KHz)
toffdly
tondly
INTEGRATED CIRCUITS DIVISION
IXD_630
8www.ixysic.com R04
Frequency (kHz)
1 10 100 1000
Supply Current (mA)
0.01
0.1
1
10
100
1000
Supply Current vs. Frequency
(VCC=35V)
CLOAD=25nF
CLOAD=10nF
CLOAD=5.6nF
Load Capacitance (pF)
5000 10000 15000 20000 25000
Supply Current (mA)
1
10
100
1000
Supply Current vs. Load Capacitance
(VCC=10V)
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
Load Capacitance (nF)
5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5
Supply Current (mA)
1
10
100
1000
Supply Current vs. Load Capacitance
(VCC=18V)
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
Load Capacitance (nF)
5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5
Supply Current (mA)
1
10
100
1000
Supply Current vs. Load Capacitance
(VCC=35V)
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
Supply V oltage (V)
10 15 20 25 30 35
Output Source Current (A)
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
Output Source Current
vs. Supply Voltage
(VIN=7V, CLOAD=1μF)
Temperature (ºC)
-50 -30 -10 10 30 50 70 90 110 130
Supply Current (mA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Dynamic Supply Current
vs. Temperature
(VCC=18V, VIN=0-5V, f =1kHz, CLOAD=5.6nF)
Frequency (kHz)
1 10 100 1000
Supply Current (mA)
0.01
0.1
1
10
100
1000
Supply Current vs. Frequency
(VCC=10V)
CLOAD=25nF
CLOAD=10nF
CLOAD=5.6nF
Frequency (kHz)
1 10 100 1000
Supply Current (mA)
0.01
0.1
1
10
100
1000
Supply Current vs. Frequency
(VCC=12V)
CLOAD=25nF
CLOAD=10nF
CLOAD=5.6nF
INTEGRATED CIRCUITS DIVISION
IXD_630
R04 www.ixysic.com 9
Temperature (ºC)
-50 -30 -10 10 30 50 70 90 110 130
UVLO Threshold (V)
7.0
7.5
8.0
8.5
9.0
Under V oltage Lockout Threshold
vs. Temperature - IXD_630M
VCC Rising
VCC Falling
Supply V oltage (V)
5 101520253035
Output Resistance (Ω)
0.10
0.12
0.14
0.16
0.18
0.20
0.22
Low-State Output Resistance
vs. Supply Voltage
ROL @ +100mA
Temperature (ºC)
-50 -30 -10 10 30 50 70 90 110 130
Output Sink Current (A)
26
28
30
32
34
36
Output Sink Current
vs. Temperature
(VCC=18V, CLOAD=1μF)
Temperature (ºC)
-50 -30 -10 10 30 50 70 90 110 130
Output Source Current (A)
-24
-26
-28
-30
-32
-34
-36
Output Source Current
vs. Temperature
(VCC=18V, CLOAD=1μF)
INTEGRATED CIRCUITS DIVISION
IXD_630
10 www.ixysic.com R04
4 Manufacturing Information
4.1 Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptib le to moistur e ingr ession. IXYS Integrated
Circuits Division classifies its plastic encapsulated devices f or moistu re sensitivity according to the lat est
v ersion o f the joint indust ry standard, IPC/JEDEC J-STD-020, in force at the time of product e valuation.
We test all of our products to t he maximum conditions set forth in the stan dard, and guarantee proper
operation of our devices when handled according to the limit ations and information in that st andard as well as to any
limitations set forth in the information or standards referenced below.
Failure to adhere to the wa rnings or limitations as established b y t he listed specificati ons could result in reduced
product performance, reduction of oper able life , and/or reduction of o verall reliability.
This product carries a Moisture Sensitivity Level (MSL) classification as shown below, and should be handled
according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
4.2 ESD Sensitivi ty
This product is ESD Sensitive, and should be handled according to the industry standard JESD-625.
4.3 Reflow Profile
Provided in the table below is the Classification Temperature (TC) of this product and the maximum dwell time the
body temperature of this device may be (TC - 5)ºC or greater. The classification temperature sets the Maximum Bo dy
Temperature allow ed for this device during lead-free re f low processes. For through-hole devices, and any other
processes, the guidelines of J-STD- 020 must be observed.
4.4 Board Was h
IXYS Integr ated Circu it s Division recommends t he use of no-clean f lux formulations. Board washing to reduce or
remove flux residue f ollowing the solder reflow process is accep table provided proper precautio ns ar e taken to
pre vent damage to the device. These precautions include but are not limited to: using a low pressure wash and
providing a follow up bake cycle sufficient to remove an y moisture trapped within the device due to t he washing
process. Due to the v ariability of the w ash parameters used to clean the board, determination of the bake temper ature
and duration necessary to remo ve the moisture trapped within the package is the responsibility of t he user
(assembler) . Cleaning or drying methods that employ ultrasonic energy ma y damage the device and should not be
used. Additionally, the device must not be exposed to flux or solv ents tha t are Chlorine- or Fluorine-based.
Device Moisture Sensitivity Level (MSL) Classification
IXD_630YI / IXD_630MYI MSL 3
IXD_630CI / IXD_630MCI MSL 1
Device Classification Temperature (TC)Dwell Time (tp)Max Reflow Cycles
IXD_630YI / IXD_630MYI 245°C 30 seconds 3
IXD_630CI / IXD_630MCI 245°C 30 seconds 1
INTEGRATED CIRCUITS DIVISION
IXD_630
R04 www.ixysic.com 11
4.5 Mechanical D ime ns io n s
4.5.1 IXD_630YI & IXD_630MYI (5-Lead TO-263)
4.5.2 IXD_630CI & IXD_630MCI(5-Lead TO-220)
H
b1
c1
b
c
SECTION: C-C
PLATING
(Note 3)
BASE METAL
E
(Note 2)
D1
D
(Note 2)
L1
e ~4x
CC
E3
D2
*
b ~5x
E1
NOTES:
1. Reference JEDEC TO-263 Type “BA”.
2. Dimension does not include mold flash; mold flash
shall not exceed 0.127mm (0.005 inch) per side.
3. Minimum plating: 1000 microinches.
4. Controlling dimension: millimeters.
MINMINMAX MAX
MM INCH
SYMBOL
1.702 BSC 0.067 BSC
0.254 BSC 0.010 BSC
0.460 TYP 0.018 TYP
0.506 TYP 0.02 TYP
4.8264.064 0.160 0.190
0.2540.000 0.000 0.010
0.9910.5080.020 0.039
0.8890.5080.020 0.035
0.7370.381 0.015 0.029
0.5840.381 0.015 0.023
1.6511.143 0.045 0.065
9.6528.382 0.330 0.380
7.7006.8580.270 0.303
10.6689.652 0.380 0.420
8.0006.223 0.245 0.315
15.87514.605 0.575 0.625
2.7941.7780.070 0.110
1.6761.000 0.039 0.066
8º--8º
A
θ
A1
b
b1
c
c1
c2
D
D1
E
E1
e
H
L
L1
L3
R
R1
6.8695.092 0.200 0.270E3
1.5621.3580.053 0.062D2
A1
L
L3
θ
RR
A
c2
A1
L
L3
θ
R1 R1
JEDEC TO-263
Optional Tip Lead Form
Recommended PCB Pattern
10.75
(0.423)
2.20
(0.087)
8.40
(0.331)
8.05
(0.317) 10.50
(0.413)
1.05
(0.041)
3.80
(0.150)
1.702
(0.067)
Dimensions
mm
(inches)
Pin 1
Indicator
Circular feature will be
present on devices
with the
Optional Tip Lead Form.
*
9.652 - 10.668
(0.380 - 0.420)
14.224 - 16.510
(0.560 - 0.650)
12.700 - 14.732
(0.500 - 0.580)
CC
8.382 - 9.017
(0.330 - 0.355)
2.540 - 3.048
(0.100 - 0.120)
1.702 4x BSC
(0.067 4x BSC)
0.381 - 1.016 5x
(0.015 - 0.040 5x) SECTION C-C
0.381 - 1.016
(0.015 - 0.040)
0.356 - 0.610
(0.014 - 0.024)
0.381 - 0.965
(0.015 - 0.038)
0.356 - 0.559
(0.014 - 0.022)
PLATINGBASE METAL
3.556 - 4.826
(0.140 - 0.190)
0.508 - 1.397
(0.020 - 0.055)
5.842 - 6.858
(0.230 - 0.270)
2.032 - 2.921
(0.080 - 0.115)
0.356 - 0.610
(0.014 - 0.024)
6.858 - 8.890
(0.270 - 0.350)
12.192 - 12.878
(0.480 - 0.507)
9.652 - 10.668
(0.380 - 0.420)
7.550 - 8.100
(0.297 - 0.319)
THERMAL PAD
LEAD TIP
0.355 M B A M
AB
0.381 M B A M
3.810 - 3.860
(0.150 - 0.152)
0.127 BSC
(0.005 BSC)
4.826 - 5.334
(0.190 - 0.210)
6.300 - 6.700
(0.248 - 0.264)
5.842 - 6.858
(0.230 - 0.270)
Dimensions
mm
(inches)
INTEGRATED CIRCUITS DIVISION
IXD_630
12 www.ixysic.com R04
For additional information please visit our website at: www.ixysic.com
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its
products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe
property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
Specification: DS-IXD_630-R04
©Cop yright 2017, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
4/5/2017