T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Datasheet: Rev C 11-14-14
- 1 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Applications
Military radar
Civilian radar
Professional and military radio communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers
Product Features
Frequency: DC to 6 GHz
Output Power (P
3dB
): 10 W at 3.3 GHz
Linear Gain: >17 dB at 3.3 GHz
Operating Voltage: 28 V
Low thermal resistance package
Functional Block Diagram
Pin Configuration
Pin No. Label
1 V
D
/ RF OUT
2 V
G
/ RF IN
Flange Source
General Description
The TriQuint T2G6000528-Q3 is a 10W (P
3dB
) discrete
GaN on SiC HEMT which operates from DC to 6
GHz.
The device is constructed with TriQuint’s proven
TQGaN25 production
process, which features advanced
field plate techniques to optimize power and efficiency at
high drain bias operating conditions. This optimization can
potentially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Ordering Information
Part ECCN Description
T2G6000528-Q3
EAR99
Packaged part
Flangeless
T2G6000528-Q3-
EVB3 EAR99 3.0-3.5 GHz
Evaluation Board
T2G6000528-Q3-
EVB5 EAR99 3.8-4.2 GHz
Evaluation Board
T2G6000528-Q3-
EVB6 EAR99 5.8 GHz
Evaluation Board
T2G6000528-Q3-
EVB1 EAR99 1.9 – 2.7 GHz
Evaluation Board
2
1
2
1
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Datasheet: Rev C 11-14-14
- 2 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Absolute Maximum Ratings
Parameter Value
Breakdown Voltage (BV
DG
) 100 V (Min.)
Drain Gate Voltage (V
DG
) 40 V
Gate Voltage Range (V
G
) -10 to 0 V
Drain Current (I
D
) 2.5 A
Gate Current (I
G
) -2.5 to 7 mA
Power Dissipation (P
D
) 15 W
RF Input Power, CW,
T = 25°C (P
IN
) 34 dBm
Channel Temperature (T
CH
) 275 °C
Mounting Temperature
(30 Seconds) 320 °C
Storage Temperature -40 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
Recommended Operating Conditions
Parameter Value
Drain Voltage (V
D
) 28 V (Typ.)
Drain Quiescent Current (I
DQ
) 50 mA (Typ.)
Peak Drain Current ( I
D
) 650 mA (Typ.)
Gate Voltage (V
G
) -3.0 V (Typ.)
Channel Temperature (T
CH
) 225 °C (Max)
Power Dissipation, CW (P
D
) 11 W (Max)
Power Dissipation, Pulse (P
D
) 12.5 W (Max)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
RF Characterization – Load Pull Performance at 6.0 GHz
(1)
Test conditions unless otherwise noted: T
A
= 25 °C, V
D
= 28 V, I
DQ
= 50 mA
Symbol Parameter Min Typical Max Units
G
LIN
Linear Gain 15.0 dB
P
3dB
Output Power at 3 dB Gain Compression 9.3 W
DE
3dB
Drain Efficiency at 3 dB Gain Compression 63.0 %
PAE
3dB
Power-Added Efficiency at 3 dB Gain
Compression
59.0 %
G
3dB
Gain at 3 dB Compression
12.0 dB
Notes:
1. V
DS
= 28 V, I
DQ
= 50 mA; Pulse: 100µs, 20%
RF Characterization – Load Pull Performance at 3.0 GHz
(1)
Test conditions unless otherwise noted: T
A
= 25 °C, V
D
= 28 V, I
DQ
= 50 mA
Symbol Parameter Min Typical Max Units
G
LIN
Linear Gain 18.5 dB
P
3dB
Output Power at 3 dB Gain Compression 9.2 W
DE
3dB
Drain Efficiency at 3 dB Gain Compression 57.5 %
PAE
3dB
Power-Added Efficiency at 3 dB Gain
Compression
55.9 %
G
3dB
Gain at 3 dB Compression
15.5 dB
Notes:
1. V
DS
= 28 V, I
DQ
= 50 mA; Pulse: 100µs, 20%
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Datasheet: Rev C 11-14-14
- 3 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
RF Characterization – Performance at 3.3 GHz
(1, 2)
Test conditions unless otherwise noted: T
A
= 25 °C, V
D
= 28 V, I
DQ
= 50 mA
Symbol Parameter Min Typical Max Units
G
LIN
Linear Gain 15.5 17.4 dB
P
3dB
Output Power at 3 dB Gain Compression 8.9 9.7 W
DE
3dB
Drain Efficiency at 3 dB Gain Compression 50.0 53.0 %
PAE
3dB
Power-Added Efficiency at 3 dB Gain
Compression
45.0 49.7 %
G
3dB
Gain at 3 dB Compression
12.5 14.4 dB
Notes:
1. Performance at 3.3 GHz in the 3.0 to 3.5 GHz Evaluation Board
2. V
DS
= 28 V, I
DQ
= 50 mA; Pulse: 100µs, 20%
RF Characterization – Narrow Band Performance at 3.50 GHz
(1)
Test conditions unless otherwise noted: T
A
= 25 °C, V
D
= 28 V, I
DQ
= 50 mA
Symbol Parameter Typical
VSWR Impedance Mismatch Ruggedness 10:1
Notes:
1. V
DS
= 28 V, I
DQ
= 50 mA, CW at P
1dB
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Datasheet: Rev C 11-14-14
- 4 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Thermal and Reliability Information
Parameter Test Conditions Value Units
Thermal Resistance (θ
JC
) DC at 85 °C Case 12.4 ºC/W
Channel Temperature (T
CH
) 225 °C
Notes:
Thermal resistance measured to bottom of package, CW.
Median Lifetime
Maximum Channel Temperature
T
BASE
= 85°C, P
D
= 12.5 W
120.0
140.0
160.0
180.0
200.0
220.0
240.0
260.0
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02
Maximum Channel Temperature (oC)
Pulse Width (sec)
Max. Channel Temperature vs. Pulse Width
5% Duty Cycle
10% Duty Cycle
25% Duty Cycle
50% Duty Cycle
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Datasheet: Rev C 11-14-14
- 5 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Load Pull Smith Charts
(1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not
the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-
pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. Test Conditions: V
DS
= 28 V, I
DQ
= 50 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Datasheet: Rev C 11-14-14
- 6 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Typical Performance
Performance is based on compromised impedance point and measured at DUT reference plane.
33 34 35 36 37 38 39
16
17
18
19
20
21
22
23
24
33 34 35 36 37 38 39
0
10
20
30
40
50
60
70
80
33 34 35 36 37 38 39
0
10
20
30
40
50
60
70
80
Pout [dBm]
Gain [dB]
DrEff. & PAE [%]
T2G6000528-Q3 Gain DrEff. and PAE vs. Pout
1000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
Gain
DrEff.
PAE
Z
S
= 9.14 + j14.83
Z
L
= 29.07 + j5.48
33 34 35 36 37 38 39 40
16
17
18
19
20
21
22
23
24
33 34 35 36 37 38 39 40
0
10
20
30
40
50
60
70
80
33 34 35 36 37 38 39 40
0
10
20
30
40
50
60
70
80
Pout [dBm]
Gain [dB]
DrEff. & PAE [%]
T2G6000528-Q3 Gain DrEff. and PAE vs. Pout
2000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
Gain
DrEff.
PAE
Z
S
= 3.21 + j6.81
Z
L
= 22.54 + j6.93
31 32 33 34 35 36 37 38 39 40 41
12
13
14
15
16
17
18
19
20
31 32 33 34 35 36 37 38 39 40 41
0
10
20
30
40
50
60
70
80
31 32 33 34 35 36 37 38 39 40 41
0
10
20
30
40
50
60
70
80
Pout [dBm]
Gain [dB]
DrEff. & PAE [%]
T2G6000528-Q3 Gain DrEff. and PAE vs. Pout
3000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
Gain
DrEff.
PAE
Z
S
= 4.86 - j1.97
Z
L
= 19.81 + j11.00
31 32 33 34 35 36 37 38 39 40 41
10
11
12
13
14
15
16
17
18
31 32 33 34 35 36 37 38 39 40 41
0
10
20
30
40
50
60
70
80
31 32 33 34 35 36 37 38 39 40 41
0
10
20
30
40
50
60
70
80
Pout [dBm]
Gain [dB]
DrEff. & PAE [%]
T2G6000528-Q3 Gain DrEff. and PAE vs. Pout
4000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
Gain
DrEff.
PAE
Z
S
= 6.35 - j10.23
Z
L
= 17.38 + j9.39
31 32 33 34 35 36 37 38 39 40 41
10
11
12
13
14
15
16
17
18
31 32 33 34 35 36 37 38 39 40 41
0
10
20
30
40
50
60
70
80
31 32 33 34 35 36 37 38 39 40 41
0
10
20
30
40
50
60
70
80
Pout [dBm]
Gain [dB]
DrEff. & PAE [%]
T2G6000528-Q3 Gain DrEff. and PAE vs. Pout
5000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
Gain
DrEff.
PAE
Z
S
= 9.03 - j11.85
Z
L
= 10.57 + j2.84
31 32 33 34 35 36 37 38 39 40 41
10
11
12
13
14
15
16
17
18
31 32 33 34 35 36 37 38 39 40 41
0
10
20
30
40
50
60
70
80
31 32 33 34 35 36 37 38 39 40 41
0
10
20
30
40
50
60
70
80
Pout [dBm]
Gain [dB]
DrEff. & PAE [%]
T2G6000528-Q3 Gain DrEff. and PAE vs. Pout
6000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA
Gain
DrEff.
PAE
Z
S
= 11.46 - j17.67
Z
L
= 13.23 - j3.01
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Datasheet: Rev C 11-14-14
- 7 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Performance Over Temperature
(1, 2)
Performance measured in TriQuint’s 3.0 GHz to 3.5 GHz Evaluation Board at 3 dB compression.
Notes:
1. Test Conditions: V
DS
= 28 V, I
DQ
= 50 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Datasheet: Rev C 11-14-14
- 8 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Bias-up Procedure Bias-down Procedure
1. V
G
set to -5 V.
2. V
D
set to 28 V.
3. Adjust V
G
more positive until quiescent I
D
is 50 mA.
4. Apply RF signal.
1. Turn off RF signal.
2. Turn off V
D
and wait 1 second to allow drain
capacitor dissipation.
3. Turn off V
G
.
Evaluation Board Performance
(1, 2)
Performance at 3 dB Compression
Notes:
1. Test Conditions: V
DS
= 28 V, I
DQ
= 50 mA
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %
Application Circuit
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Datasheet: Rev C 11-14-14
- 9 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Evaluation Board Layout
Top RF layer is 0.025” thick Rogers RO3210, ɛ
r
= 10.2. The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
Bill of Materials
Reference Design
Value Qty Manufacturer Part Number
C1, C7 22 uF 2 Sprague T491D
C2, C8 1 uF 2 Kemet 1812C105KAT2A
C3, C9 0.1 uF 2 Kemet C1206C104KRAC7800
C4, C10 0.01 uF 2 Kemet C1206C103KRAC7800
C5, C11 100 pF 2 ATC 100B101
C6, C12 2400 pF 2 DLI C08BL242C5UNC0B
C13, C14 27 pF 2 ATC 600L270JT200
R1 1000 ohm 1 Vishay Dale CRCW0805100F100
R2 12 ohm 1 Vishay Dale RM73B2B120J
L1, L2 9.85 nH 2 Coilcraft 16069JLB
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Datasheet: Rev C 11-14-14
- 10 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Pin Layout
Note:
The T2G6000528-Q3 will be marked with the “05282” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot
start, and the “MXXX” is the production lot number.
Pin Description
Pin Symbol Description
1 V
D
/ RF OUT Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 9 as an
example.
2 V
G
/ RF IN Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an
example.
3 Flange Source connected to ground; see EVB Layout on page 9 as an example.
Notes:
Thermal resistance measured to bottom of package
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Datasheet: Rev C 11-14-14
- 11 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Mechanical Information
All dimensions are in millimeters. Unless specified otherwise, tolerances are ± 0.127.
Note:
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Datasheet: Rev C 11-14-14
- 12 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Product Compliance Information
ESD Sensitivity Ratings
Caution! ESD-Sensitive Device
ESD Rating: Class 1A
Value: Passes 250 V to < 500 V max.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
Solderability
Compatible with the latest version of J-STD-
020, Lead
free solder, 260° C
RoHs Compliance
This part is
compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C
15
H
12
Br
4
0
2
) Free
PFOS Free
SVHC Free
MSL Rating
Level 3 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce EAR99
Recommended Soldering Temperature Profile
T2G6000528-Q3
10W, 28V DC – 6 GHz, GaN RF Power Transistor
Datasheet: Rev C 11-14-14
- 13 of 13 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com Tel: +1.972.994.8465
Email: info-sales@triquint.com Fax: +1.972.994.8504
For technical questions and application information: Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable.
TriQuint makes no warranties regarding the information
contained herein.
TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein.
TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein.
The information
contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information
is entirely with the user.
All information contained herein is subject to change without notice. Customers should obtain
and verify the latest relevant information before placing orders for TriQuint products. The information contained herein
or any use of such information does
not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other
intellectual property rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death.